| High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation K Harrouche, R Kabouche, E Okada, F Medjdoub IEEE Journal of the Electron Devices Society 7, 1145-1150, 2019 | 81 | 2019 |
| Power performance at 40 GHz of AlGaN/GaN high-electron mobility transistors grown by molecular beam epitaxy on Si (111) substrate P Altuntas, F Lecourt, A Cutivet, N Defrance, E Okada, M Lesecq, ... IEEE Electron Device Letters 36 (4), 303-305, 2015 | 78 | 2015 |
| Bandwidth enhancement in disordered metamaterial absorbers J Hao, É Lheurette, L Burgnies, É Okada, D Lippens Applied Physics Letters 105 (8), 2014 | 56 | 2014 |
| First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor S Mhedhbi, M Lesecq, P Altuntas, N Defrance, E Okada, Y Cordier, ... IEEE Electron Device Letters 37 (5), 553-555, 2016 | 35 | 2016 |
| Force assistance control for standing-up motion D Chugo, K Kawabata, H Kaetsu, N Miyake, K Kosuge, H Asama, ... The First IEEE/RAS-EMBS International Conference on Biomedical Robotics and …, 2006 | 33 | 2006 |
| Optimization of High Electron Mobility Heterostructures for High-Power/Frequency Performances S Rennesson, F Lecourt, N Defrance, M Chmielowska, S Chenot, ... IEEE transactions on electron devices 60 (10), 3105-3111, 2013 | 29 | 2013 |
| Non-volatile RF and mm-wave switches based on monolayer hBN M Kim, E Pallecchi, R Ge, X Wu, V Avramovic, E Okada, JC Lee, H Happy, ... 2019 IEEE International Electron Devices Meeting (IEDM), 9.5. 1-9.5. 4, 2019 | 18 | 2019 |
| High power, high PAE Q‐band sub‐10 nm barrier thickness AlN/GaN HEMTs E Dogmus, R Kabouche, A Linge, E Okada, M Zegaoui, F Medjdoub physica status solidi (a) 214 (8), 1600797, 2017 | 18 | 2017 |
| Power measurement setup for on-wafer large signal characterization up to Q-band R Kabouche, E Okada, E Dogmus, A Linge, M Zegaoui, F Medjdoub IEEE Microwave and wireless components letters 27 (4), 419-421, 2017 | 17 | 2017 |
| High-speed uni-traveling-carrier photodiodes on silicon nitride D Maes, S Lemey, G Roelkens, M Zaknoune, V Avramovic, E Okada, ... APL Photonics 8 (1), 2023 | 15 | 2023 |
| Comparison of C-doped AlN/GaN HEMTs and AlN/GaN/AlGaN double heterostructure for mmW applications R Kabouche, J Derluyn, R Pusche, S Degroote, M Germain, R Pécheux, ... 2018 13th European Microwave Integrated Circuits Conference (EuMIC), 5-8, 2018 | 14 | 2018 |
| High Power AlN/GaN HEMTs with record power-added-efficiency> 70% at 40 GHz K Harrouche, R Kabouche, E Okada, F Medjdoub 2020 IEEE/MTT-S International Microwave Symposium (IMS), 285-288, 2020 | 13 | 2020 |
| 2 W mm− 1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz MR Irekti, M Lesecq, N Defrance, E Okada, E Frayssinet, Y Cordier, ... Semiconductor Science and Technology 34 (12), 12LT01, 2019 | 13 | 2019 |
| Gallium nitride MEMS resonators: how residual stress impacts design and performances C Morelle, D Théron, J Derluyn, S Degroote, M Germain, V Zhang, ... Microsystem Technologies 24, 371-377, 2018 | 13 | 2018 |
| On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs P Altuntas, N Defrance, M Lesecq, A Agboton, R Ouhachi, E Okada, ... 2014 9th European Microwave Integrated Circuit Conference, 88-91, 2014 | 13 | 2014 |
| Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology A Soltani, Y Cordier, JC Gerbedoen, S Joblot, E Okada, M Chmielowska, ... Semiconductor science and technology 28 (9), 094003, 2013 | 11 | 2013 |
| Large-area femtosecond laser milling of silicon employing trench analysis A Bhaskar, J Philippe, F Braud, E Okada, V Avramovic, JF Robillard, ... Optics & Laser Technology 138, 106866, 2021 | 9 | 2021 |
| High efficiency aln/gan hemts for q-band applications with an improved thermal dissipation R Kabouche, R Pecheux, K Harrouche, E Okada, F Medjdoub, J Derluyn, ... International Journal of High Speed Electronics and Systems 28 (01n02), 1940003, 2019 | 9 | 2019 |
| Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness R Pécheux, R Kabouche, E Dogmus, A Linge, E Okada, M Zegaoui, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 228-231, 2017 | 9 | 2017 |
| Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances K Harrouche, S Venkatachalam, F Grandpierron, E Okada, F Medjdoub Applied Physics Express 15 (11), 116504, 2022 | 8 | 2022 |
