| The 2017 Plasma Roadmap: Low temperature plasma science and technology I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ... Journal of Physics D: Applied Physics 50 (32), 323001, 2017 | 957 | 2017 |
| The 2012 plasma roadmap S Samukawa, M Hori, S Rauf, K Tachibana, P Bruggeman, G Kroesen, ... Journal of Physics D: Applied Physics 45 (25), 253001, 2012 | 791 | 2012 |
| Plasma processing method and equipment used therefor S Samukawa US Patent 5,827,435, 1998 | 393 | 1998 |
| Neutral particle beam processing apparatus K Ichiki, K Yamauchi, H Hiyama, S Samukawa US Patent 6,861,642, 2005 | 320 | 2005 |
| Low dielectric constant insulating film and method for forming the same S Samukawa, S Yasuhara, S Kadomura, T Shimayama, H Yano, K Tajima, ... US Patent 8,828,886, 2014 | 307 | 2014 |
| Beam processing apparatus K Ichiki, K Yamauchi, H Hiyama, S Samukawa US Patent 6,849,857, 2005 | 245 | 2005 |
| Plasma Treatment Method and Plasma Etching Method Y Hoshino, S Samukawa US Patent App. 11/631,597, 2008 | 237 | 2008 |
| Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source S Samukawa, K Sakamoto, K Ichiki Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (5 …, 2002 | 206 | 2002 |
| The 2022 Plasma Roadmap: low temperature plasma science and technology I Adamovich, S Agarwal, E Ahedo, LL Alves, S Baalrud, N Babaeva, ... Journal of Physics D: Applied Physics 55 (37), 373001, 2022 | 192 | 2022 |
| Ultimate top-down etching processes for future nanoscale devices: Advanced neutral-beam etching S Samukawa Japanese journal of applied physics 45 (4R), 2395, 2006 | 186 | 2006 |
| Time‐modulated electron cyclotron resonance plasma discharge for controlling generation of reactive species S Samukawa, S Furuoya Applied physics letters 63 (15), 2044-2046, 1993 | 168 | 1993 |
| Pulse-time modulated plasma discharge for highly selective, highly anisotropic and charge-free etching S Samukawa, T Mieno Plasma Sources Science and Technology 5 (2), 132, 1996 | 166 | 1996 |
| Pulse–time‐modulated electron cyclotron resonance plasma discharge for highly selective, highly anisotropic, and charge‐free etching S Samukawa, H Ohtake, T Mieno Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (6 …, 1996 | 134 | 1996 |
| Highly selective and highly anisotropic SiO2 etching in pulse-time modulated electron cyclotron resonance plasma SSS Samukawa Japanese journal of applied physics 33 (4S), 2133, 1994 | 132 | 1994 |
| Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning S Samukawa Applied physics letters 64 (25), 3398-3400, 1994 | 117 | 1994 |
| Dynamics of pulsed-power chlorine plasmas MV Malyshev, VM Donnelly, JI Colonell, S Samukawa Journal of applied physics 86 (9), 4813-4820, 1999 | 98 | 1999 |
| Pulse‐time modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and less‐charging polycrystalline silicon patterning S Samukawa, K Terada Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 98 | 1994 |
| Low-k materials-05EC01 Super-Low-k SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical … A Wada, T Sasaki, S Yasuhara, S Samukawa Japanese Journal of Applied Physics 51 (5), 2012 | 96 | 2012 |
| High-efficiency neutral-beam generation by combination of inductively coupled plasma and parallel plate DC bias S Samukawa, K Sakamoto, K Ichiki Japanese Journal of Applied Physics 40 (7B), L779, 2001 | 91 | 2001 |
| High-efficiency low energy neutral beam generation using negative ions in pulsed plasma S Samukawa, K Sakamoto, K Ichiki Japanese Journal of Applied Physics 40 (10A), L997, 2001 | 90 | 2001 |
Kazuhiko EndoAIST確認したメール アドレス: aist.go.jp
