S. Samukawa, Seiji Samukawa
S. Samukawa, Seiji Samukawa
Institute of Fluid Science and Advanced Institute for Material Research, Tohoku University
確認したメール アドレス: ifs.tohoku.ac.jp - ホームページ
タイトル引用先
The 2012 plasma roadmap
S Samukawa, M Hori, S Rauf, K Tachibana, P Bruggeman, G Kroesen, ...
Journal of Physics D: Applied Physics 45 (25), 253001, 2012
4462012
The 2017 Plasma Roadmap: Low temperature plasma science and technology
I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ...
Journal of Physics D: Applied Physics 50 (32), 323001, 2017
2242017
Plasma Treatment Method and Plasma Etching Method
Y Hoshino, S Samukawa
US Patent App. 11/631,597, 2008
1832008
Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source
S Samukawa, K Sakamoto, K Ichiki
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (5 …, 2002
1672002
Pulse-time modulated plasma discharge for highly selective, highly anisotropic and charge-free etching
S Samukawa, T Mieno
Plasma Sources Science and Technology 5 (2), 132, 1996
1651996
Time‐modulated electron cyclotron resonance plasma discharge for controlling generation of reactive species
S Samukawa, S Furuoya
Applied physics letters 63 (15), 2044-2046, 1993
1431993
Ultimate top-down etching processes for future nanoscale devices: advanced neutral-beam etching
S Samukawa
Japanese journal of applied physics 45 (4R), 2395, 2006
1252006
Highly selective and highly anisotropic SiO2 etching in pulse-time modulated electron cyclotron resonance plasma
S Samukawa
Japanese journal of applied physics 33 (4S), 2133, 1994
1241994
Pulse–time‐modulated electron cyclotron resonance plasma discharge for highly selective, highly anisotropic, and charge‐free etching
S Samukawa, H Ohtake, T Mieno
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (6 …, 1996
1201996
Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning
S Samukawa
Applied physics letters 64 (25), 3398-3400, 1994
1061994
Pulse‐time modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and less‐charging polycrystalline silicon patterning
S Samukawa, K Terada
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
891994
Dynamics of pulsed-power chlorine plasmas
MV Malyshev, VM Donnelly, JI Colonell, S Samukawa
Journal of applied physics 86 (9), 4813-4820, 1999
831999
Ultrahigh frequency versus inductively coupled chlorine plasmas: Comparisons of Cl and concentrations and electron temperatures measured by trace rare …
MV Malyshev, VM Donnelly, S Samukawa
Journal of applied physics 84 (3), 1222-1230, 1998
801998
High-efficiency low energy neutral beam generation using negative ions in pulsed plasma
S Samukawa, K Sakamoto, K Ichiki
Japanese Journal of Applied Physics 40 (10A), L997, 2001
782001
Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias
S Samukawa
Applied physics letters 68 (3), 316-318, 1996
681996
New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes
S Samukawa, Y Nakagawa, T Tsukada, H Ueyama, K Shinohara
Japanese journal of applied physics 34 (12S), 6805, 1995
681995
Plasma processing method and equipment used therefor
S Samukawa
US Patent 5,827,435, 1998
631998
On-wafer monitoring of vacuum-ultraviolet radiation damage in high-density plasma processes
S Samukawa, Y Ishikawa, S Kumagai, M Okigawa
Japanese journal of applied physics 40 (12B), L1346, 2001
622001
High-efficiency neutral-beam generation by combination of inductively coupled plasma and parallel plate DC bias
S Samukawa, K Sakamoto, K Ichiki
Japanese Journal of Applied Physics 40 (7B), L779, 2001
622001
Plasma-etching method and apparatus therefor
S Samukawa
US Patent 5,468,341, 1995
601995
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