Tunneling Transistors based on MoS2/MoTe2 Van der Waals Heterostructures Y Balaji, Q Smets, CJL de la Rosa, AKA Lu, D Chiappe, T Agarwal, D Lin, ...
IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018
24 2018 Topological to trivial insulating phase transition in stanene M Houssa, B van den Broek, K Iordanidou, AKA Lu, G Pourtois, ...
Nano Research 9 (3), 774-778, 2016
24 2016 Towards an understanding of the electric field-induced electrostatic doping in Van der Waals heterostructures: a first-principles study. AKA Lu, M Houssa, IP Radu, G Pourtois
ACS applied materials & interfaces, 2017
11 2017 Contact Resistance at MoS2 -Based 2D Metal/Semiconductor Lateral Heterojunctions M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ...
ACS Applied Nano Materials 2 (2), 760-766, 2019
8 2019 On the electrostatic control achieved in transistors based on multilayered MoS2 : A first-principles study AKA Lu, G Pourtois, M Luisier, IP Radu, M Houssa
Journal of Applied Physics 121 (4), 044505, 2017
8 2017 Interaction of silicene and germanene with non-metallic substrates M Houssa, E Scalise, B van den Broek, A Lu, G Pourtois, VV Afanas' Ev, ...
ECS Transactions 64 (8), 111, 2014
8 2014 A systematic study of various 2D materials in the light of defect formation and oxidation A Dabral, AKA Lu, D Chiappe, M Houssa, G Pourtois
Physical Chemistry Chemical Physics 21 (3), 1089-1099, 2019
7 2019 Impact of Layer Alignment on the Behavior of Ab Initio Study AKA Lu, M Houssa, M Luisier, G Pourtois
Physical Review Applied 8 (3), 034017, 2017
7 2017 Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations K Nishio, AKA Lu, G Pourtois
Physical Review B 91 (16), 165303, 2015
6 2015 Contact resistance at graphene/MoS2 lateral heterostructures M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ...
Applied Physics Letters 114 (16), 163101, 2019
5 2019 Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study AKA Lu, G Pourtois, T Agarwal, A Afzalian, IP Radu, M Housa
Applied Physics Letters 108 (4), 043504, 2016
5 2016 Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study AKA Lu, T Yayama, T Morishita, MJS Spencer, T Nakanishi
J. Phys. Chem. C, 2018
4 2018 Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport B van den Broek, M Houssa, A Lu, G Pourtois, V Afanas’ev, A Stesmans
Nano Research, 1-13, 2016
4 2016 The Role of Nonidealities in the Scaling of MoS2 FETs D Verreck, G Arutchelvan, CJL De La Rosa, A Leonhardt, D Chiappe, ...
IEEE Transactions on Electron Devices 65 (10), 4635-4640, 2018
3 2018 Two-dimensional material semiconductor device G Pourtois, AK Lu, C Huyghebaert
US Patent 9,899,501, 2018
3 2018 Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations G Pourtois, A Dabral, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Transactions 80 (1), 303, 2017
3 2017 Universal short-range order and material dependent glass-forming ability of metallic liquids and glasses K Nishio, AKA Lu, T Miyazaki
Physical Review Research 1 (1), 012013, 2019
2 2019 First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect T Yayama, AKA Lu, T Morishita, T Nakanishi
Japanese Journal of Applied Physics 58 (SC), SCCB35, 2019
2 2019 Entropy-driven docosahedral short-range order in simple liquids and glasses K Nishio, AKA Lu, T Miyazaki
Phys. Rev. E 99, 022121, 2019
2 2019 Study of the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Journal of Solid State Science and Technology 7 (6), N73-N80, 2018
2 2018 
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