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Anh Khoa Augustin Lu
Anh Khoa Augustin Lu
Postdoctoral researcher, NIMS
Adresse e-mail validée de nims.go.jp - Page d'accueil
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Tunneling Transistors based on MoS2/MoTe2 Van der Waals Heterostructures
Y Balaji, Q Smets, CJL de la Rosa, AKA Lu, D Chiappe, T Agarwal, D Lin, ...
IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018
432018
Topological to trivial insulating phase transition in stanene
M Houssa, B van den Broek, K Iordanidou, AKA Lu, G Pourtois, ...
Nano Research 9, 774-778, 2016
412016
Towards an understanding of the electric field-induced electrostatic doping in Van der Waals heterostructures: a first-principles study.
AKA Lu, M Houssa, IP Radu, G Pourtois
ACS applied materials & interfaces, 2017
282017
Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions
M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ...
ACS Applied Nano Materials 2 (2), 760-766, 2019
242019
On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study
AKA Lu, G Pourtois, M Luisier, IP Radu, M Houssa
Journal of Applied Physics 121 (4), 2017
242017
The Role of Nonidealities in the Scaling of MoS2 FETs
D Verreck, G Arutchelvan, CJL De La Rosa, A Leonhardt, D Chiappe, ...
IEEE Transactions on Electron Devices 65 (10), 4635-4640, 2018
202018
A systematic study of various 2D materials in the light of defect formation and oxidation
A Dabral, AKA Lu, D Chiappe, M Houssa, G Pourtois
Physical Chemistry Chemical Physics 21 (3), 1089-1099, 2019
192019
Impact of Layer Alignment on the Behavior of Tunnel Field-Effect Transistors: An Ab Initio Study
AKA Lu, M Houssa, M Luisier, G Pourtois
Physical Review Applied 8 (3), 034017, 2017
192017
Two-dimensional material semiconductor device
G Pourtois, AK Lu, C Huyghebaert
US Patent 9,899,501, 2018
162018
Study of the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations
A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Journal of Solid State Science and Technology 7 (6), N73-N80, 2018
142018
Contact resistance at graphene/MoS2 lateral heterostructures
M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ...
Applied Physics Letters 114 (16), 2019
132019
Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition
M Okada, J Pu, YC Lin, T Endo, N Okada, WH Chang, AKA Lu, ...
ACS nano 16 (8), 13069-13081, 2022
112022
Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport
B van den Broek, M Houssa, A Lu, G Pourtois, V Afanas’ev, A Stesmans
Nano Research, 1-13, 2016
112016
Interaction of silicene and germanene with non-metallic substrates
M Houssa, E Scalise, B Van den Broek, A Lu, G Pourtois, VV Afanas' Ev, ...
ECS Transactions 64 (8), 111, 2014
112014
Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study
AKA Lu, T Yayama, T Morishita, MJS Spencer, T Nakanishi
J. Phys. Chem. C, 2018
102018
Shear-induced chemical segregation in a Fe-based bulk metallic glass at room temperature
DV Louzguine-Luzgin, AS Trifonov, YP Ivanov, AKA Lu, AV Lubenchenko, ...
Scientific reports 11 (1), 13650, 2021
92021
Entropy-driven docosahedral short-range order in simple liquids and glasses
K Nishio, AKA Lu, T Miyazaki
Phys. Rev. E 99, 022121, 2019
92019
Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping
M Okada, N Nagamura, T Matsumura, Y Ando, AKA Lu, N Okada, ...
APL Materials 9 (12), 2021
82021
Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations
K Nishio, AKA Lu, G Pourtois
Physical Review B 91 (16), 165303, 2015
82015
Universal short-range order and material dependent glass-forming ability of metallic liquids and glasses
K Nishio, AKA Lu, T Miyazaki
Physical Review Research 1 (1), 012013, 2019
72019
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