Anh Khoa Augustin Lu
Anh Khoa Augustin Lu
Postdoctoral researcher, AIST/Tohoku University
Adresse e-mail validée de aist.go.jp - Page d'accueil
TitreCitée parAnnée
Topological to trivial insulating phase transition in stanene
M Houssa, B van den Broek, K Iordanidou, AKA Lu, G Pourtois, ...
Nano Research 9 (3), 774-778, 2016
192016
Tunneling Transistors based on MoS2/MoTe2 Van der Waals Heterostructures
Y Balaji, Q Smets, CJL de la Rosa, AKA Lu, D Chiappe, T Agarwal, D Lin, ...
IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018
122018
Towards an understanding of the electric field-induced electrostatic doping in Van der Waals heterostructures: a first-principles study.
AKA Lu, M Houssa, IP Radu, G Pourtois
ACS applied materials & interfaces, 2017
82017
Interaction of silicene and germanene with non-metallic substrates
M Houssa, E Scalise, B van den Broek, A Lu, G Pourtois, VV Afanas' Ev, ...
Journal of Physics: Conference Series 574 (1), 012015, 2015
82015
Impact of Layer Alignment on the Behavior of Tunnel Field-Effect Transistors: An Ab Initio Study
AKA Lu, M Houssa, M Luisier, G Pourtois
Physical Review Applied 8 (3), 034017, 2017
72017
Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations
K Nishio, AKA Lu, G Pourtois
Physical Review B 91 (16), 165303, 2015
72015
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study
AKA Lu, G Pourtois, T Agarwal, A Afzalian, IP Radu, M Housa
Applied Physics Letters 108 (4), 043504, 2016
62016
On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study
AKA Lu, G Pourtois, M Luisier, IP Radu, M Houssa
Journal of Applied Physics 121 (4), 044505, 2017
52017
Two-dimensional material semiconductor device
G Pourtois, AK Lu, C Huyghebaert
US Patent 9,899,501, 2018
42018
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
G Pourtois, A Dabral, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Transactions 80 (1), 303-311, 2017
32017
Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study
AKA Lu, T Yayama, T Morishita, MJS Spencer, T Nakanishi
J. Phys. Chem. C, 2018
22018
Study of the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations
A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Journal of Solid State Science and Technology 7 (6), N73-N80, 2018
22018
Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport
B van den Broek, M Houssa, A Lu, G Pourtois, V Afanas’ev, A Stesmans
Nano Research, 1-13, 2016
22016
Contact resistance at graphene/MoS2 lateral heterostructures
M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ...
Applied Physics Letters 114 (16), 163101, 2019
12019
Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions
M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ...
ACS Applied Nano Materials 2 (2), 760-766, 2019
12019
Entropy-driven docosahedral short-range order in simple liquids and glasses
K Nishio, AKA Lu, T Miyazaki
Phys. Rev. E 99, 022121, 2019
12019
A systematic study of various 2D materials in the light of defect formation and oxidation
A Dabral, AKA Lu, D Chiappe, M Houssa, G Pourtois
Physical Chemistry Chemical Physics 21 (3), 1089-1099, 2019
12019
The Role of Nonidealities in the Scaling of MoS2FETs
D Verreck, G Arutchelvan, CJL De La Rosa, A Leonhardt, D Chiappe, ...
IEEE Transactions on Electron Devices 65 (10), 4635-4640, 2018
12018
On bilayer GaN: New stable structures and impact of hydrogen passivation
AKA Lu, T Yayama, T Morishita, T Nakanishi
Recent Progress in Graphene & 2D Materials Resesarch 2019, 2019
2019
Short- and medium-range order in Cu-Zr metallic glasses analyzed using the p3 code
AKA Lu, K Nishio, T Morishita, Z Lu, A Hirata
17th International Conference on Liquid and Amorphous Metals, 2019
2019
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