Control of carrier density by self-assembled monolayers in organic field-effect transistors S Kobayashi, T Nishikawa, T Takenobu, S Mori, T Shimoda, T Mitani, ... Nature materials 3 (5), 317-322, 2004 | 902 | 2004 |
Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications JK Huang, J Pu, CL Hsu, MH Chiu, ZY Juang, YH Chang, WH Chang, ... ACS nano 8 (1), 923-930, 2014 | 802 | 2014 |
Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications JK Huang, J Pu, CL Hsu, MH Chiu, ZY Juang, YH Chang, WH Chang, ... ACS nano 8 (1), 923-930, 2014 | 802 | 2014 |
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics J Pu, Y Yomogida, KK Liu, LJ Li, Y Iwasa, T Takenobu Nano letters 12 (8), 4013-4017, 2012 | 744 | 2012 |
Stable and controlled amphoteric doping by encapsulation of organic molecules inside carbon nanotubes T Takenobu, T Takano, M Shiraishi, Y Murakami, M Ata, H Kataura, ... Nature materials 2 (10), 683-688, 2003 | 536 | 2003 |
Ferroelectric Polarization Flop in a Frustrated Magnet Induced by a Magnetic Field K Taniguchi, N Abe, T Takenobu, Y Iwasa, T Arima Physical review letters 97 (9), 097203, 2006 | 481 | 2006 |
Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection YH Chang, W Zhang, Y Zhu, Y Han, J Pu, JK Chang, WT Hsu, JK Huang, ... ACS nano 8 (8), 8582-8590, 2014 | 407 | 2014 |
Fabrication and characterization of thin-film transistors with high field-effect mobility S Kobayashi, T Takenobu, S Mori, A Fujiwara, Y Iwasa Applied physics letters 82 (25), 4581-4583, 2003 | 301 | 2003 |
High Mobility and Luminescent Efficiency in Organic Single‐Crystal Light‐Emitting Transistors SZ Bisri, T Takenobu, Y Yomogida, H Shimotani, T Yamao, S Hotta, ... Advanced Functional Materials 19 (11), 1728-1735, 2009 | 226 | 2009 |
Tunable carbon nanotube thin‐film transistors produced exclusively via inkjet printing H Okimoto, T Takenobu, K Yanagi, Y Miyata, H Shimotani, H Kataura, ... Advanced materials 22 (36), 3981-3986, 2010 | 225 | 2010 |
Intralayer carbon substitution in the superconductor T Takenobu, T Ito, DH Chi, K Prassides, Y Iwasa Physical Review B 64 (13), 134513, 2001 | 219 | 2001 |
High current density in light-emitting transistors of organic single crystals T Takenobu, SZ Bisri, T Takahashi, M Yahiro, C Adachi, Y Iwasa Physical review letters 100 (6), 066601, 2008 | 217 | 2008 |
Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor YJ Zhang, JT Ye, Y Yomogida, T Takenobu, Y Iwasa Nano letters 13 (7), 3023-3028, 2013 | 203 | 2013 |
Ambipolar organic field-effect transistors based on rubrene single crystals T Takahashi, T Takenobu, J Takeya, Y Iwasa Applied physics letters 88 (3), 033505, 2006 | 192 | 2006 |
Ambipolar light‐emitting transistors of a tetracene single crystal T Takahashi, T Takenobu, J Takeya, Y Iwasa Advanced Functional Materials 17 (10), 1623-1628, 2007 | 187 | 2007 |
Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors J Takeya, T Nishikawa, T Takenobu, S Kobayashi, Y Iwasa, T Mitani, ... Applied physics letters 85 (21), 5078-5080, 2004 | 180 | 2004 |
In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors J Takeya, J Kato, K Hara, M Yamagishi, R Hirahara, K Yamada, ... Physical review letters 98 (19), 196804, 2007 | 176 | 2007 |
Mobility and Dynamics of Charge Carriers in Rubrene Single Crystals Studied by Flash‐Photolysis Microwave Conductivity and Optical Spectroscopy A Saeki, S Seki, T Takenobu, Y Iwasa, S Tagawa Advanced Materials 20 (5), 920-923, 2008 | 171 | 2008 |
Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance K Marumoto, S Kuroda, T Takenobu, Y Iwasa Physical review letters 97 (25), 256603, 2006 | 169 | 2006 |
High-performance transparent flexible transistors using carbon nanotube films T Takenobu, T Takahashi, T Kanbara, K Tsukagoshi, Y Aoyagi, Y Iwasa Applied physics letters 88 (3), 033511, 2006 | 166 | 2006 |