| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 545 | 2008 |
| Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 10_1, 2013 | 316 | 2013 |
| A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008 | 263 | 2008 |
| A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009 | 252 | 2009 |
| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 228 | 2018 |
| Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013 | 215 | 2013 |
| Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008 | 181 | 2008 |
| Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED MS Islim, RX Ferreira, X He, E Xie, S Videv, S Viola, S Watson, ... Photonics Research 5 (2), A35-A43, 2017 | 131 | 2017 |
| Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 033505, 2012 | 121 | 2012 |
| A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 114508, 2009 | 118 | 2009 |
| Performance degradation of high-brightness light emitting diodes under DC and pulsed bias S Buso, G Spiazzi, M Meneghini, G Meneghesso IEEE Transactions on Device and Materials Reliability 8 (2), 312-322, 2008 | 112 | 2008 |
| AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE transactions on electron devices 60 (10), 3119-3131, 2013 | 108 | 2013 |
| Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE Transactions on electron devices 58 (9), 2996-3003, 2011 | 108 | 2011 |
| Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing E Zanoni, F Danesin, M Meneghini, A Cetronio, C Lanzieri, M Peroni, ... IEEE Electron Device Letters 30 (5), 427-429, 2009 | 102 | 2009 |
| Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010 | 101 | 2010 |
| High temperature electro-optical degradation of InGaN/GaN HBLEDs M Meneghini, L Trevisanello, C Sanna, G Mura, M Vanzi, G Meneghesso, ... Microelectronics Reliability 47 (9-11), 1625-1629, 2007 | 101 | 2007 |
| Recent results on the degradation of white LEDs for lighting G Meneghesso, M Meneghini, E Zanoni Journal of Physics D: Applied Physics 43 (35), 354007, 2010 | 100 | 2010 |
| Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes F Rossi, M Pavesi, M Meneghini, G Salviati, M Manfredi, G Meneghesso, ... Journal of applied physics 99 (5), 053104, 2006 | 95 | 2006 |
| Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ... IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014 | 73 | 2014 |
| Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate M Meneghini, C de Santi, T Ueda, T Tanaka, D Ueda, E Zanoni, ... IEEE Electron device letters 33 (3), 375-377, 2012 | 73 | 2012 |
