Pierre Lefebvre
Pierre Lefebvre
Directeur de Recherche CNRS. Physics. Laboratoire Charles Coulomb (L2C), Université de Montpellier
確認したメール アドレス: umontpellier.fr - ホームページ
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Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga)N/GaN quantum wells with thickness control at monolayer scale
M Leroux, N Grandjean, M Laugt, J Massies, B Gil, P Lefebvre, ...
Physical Review-Section B-Condensed Matter 58 (20), R13371, 1998
4111998
Simple analytical method for calculating exciton binding energies in semiconductor quantum wells
H Mathieu, P Lefebvre, P Christol
Physical Review B 46 (7), 4092, 1992
3331992
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
2822001
Barrier-width dependence of group-III nitrides quantum-well transition energies
M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald
Physical Review-Section B-Condensed Matter 60 (3), 1496-1499, 1999
2451999
Internal electric field in wurtzite ZnO/Zn0. 78Mg0. 22O quantum wells
C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review-Section B-Condensed Matter 72 (24), 241305R, 2005
2252005
Influence of electron-phonon interaction on the optical properties of III nitride semiconductors
XB Zhang, T Taliercio, S Kolliakos, P Lefebvre
Journal of Physics: Condensed Matter 13 (32), 7053, 2001
1762001
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells
P Lefebvre, J Allegre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ...
Physical Review-Section B-Condensed Matter 59 (23), 15363-15367, 1999
1671999
Radiative lifetime of a single electron-hole pair in GaN ∕ AlN quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
1352006
Recombination dynamics of free and localized excitons in G a N/G a 0.93 Al 0.07 N quantum wells
P Lefebvre, J Allègre, B Gil, A Kavokine, H Mathieu, W Kim, A Salvador, ...
Physical Review B 57 (16), R9447, 1998
1211998
Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires
P Lefebvre, P Christol, H Mathieu
Physical Review B 48 (23), 17308, 1993
1171993
Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In) N/GaN systems
A Morel, P Lefebvre, S Kalliakos, T Taliercio, T Bretagnon, B Gil
Physical Review-Section B-Condensed Matter 68 (4), 45331-45400, 2003
1072003
Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy
E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 7, 2002
992002
Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires
P Christol, P Lefebvre, H Mathieu
Journal of applied physics 74 (9), 5626-5637, 1993
991993
Effects of finite spin-orbit splitting on optical properties of spherical semiconductor quantum dots
T Richard, P Lefebvre, H Mathieu, J Allégre
Physical Review B 53 (11), 7287, 1996
941996
Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol‐gel process
H Mathieu, T Richard, J Allègre, P Lefebvre, G Arnaud, W Granier, ...
Journal of applied physics 77 (1), 287-293, 1995
931995
Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices
H Mathieu, J Allègre, A Chatt, P Lefebvre, JP Faurie
Physical Review B 38 (11), 7740, 1988
891988
Barrier composition dependence of the internal electric field in quantum wells
T Bretagnon, P Lefebvre, T Guillet, T Taliercio, B Gil, C Morhain
Applied physics letters 90 (20), 201912, 2007
882007
Exchange effects on excitons in quantum wells
Y Chen, B Gil, P Lefebvre, H Mathieu
Physical Review B 37 (11), 6429, 1988
861988
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ...
Journal of Applied Physics 105 (4), 043102-043102-7, 2009
832009
Confined Excitons in GaN–AlGaN Quantum Wells
P Bigenwald, P Lefebvre, T Bretagnon, B Gil
physica status solidi (b) 216 (1), 371-374, 1999
821999
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