James Stathis
James Stathis
IBM Research
確認したメール アドレス: us.ibm.com - ホームページ
タイトル
引用先
引用先
Percolation models for gate oxide breakdown
JH Stathis
Journal of applied physics 86 (10), 5757-5766, 1999
5791999
Luminescence degradation in porous silicon
MA Tischler, RT Collins, JH Stathis, JC Tsang
Applied Physics Letters 60 (5), 639-641, 1992
5311992
Dielectric breakdown mechanisms in gate oxides
S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung
Journal of applied physics 98 (12), 12, 2005
4282005
Reliability projection for ultra-thin oxides at low voltage
JH Stathis, DJ DiMaria
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
4221998
The negative bias temperature instability in MOS devices: A review
JH Stathis, S Zafar
Microelectronics Reliability 46 (2-4), 270-286, 2006
4172006
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
E Cartier, JH Stathis, DA Buchanan
Applied physics letters 63 (11), 1510-1512, 1993
3821993
Hydrogen electrochemistry and stress-induced leakage current in silica
PE Blöchl, JH Stathis
Physical review letters 83 (2), 372, 1999
3131999
Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
JH Stathis
IEEE Transactions on Device and Materials Reliability 1 (1), 43-59, 2001
3042001
Reliability limits for the gate insulator in CMOS technology
JH Stathis
IBM Journal of Research and Development 46 (2.3), 265-286, 2002
2632002
Time-resolved photoluminescence in amorphous silicon dioxide
JH Stathis, MA Kastner
Physical Review B 35 (6), 2972, 1987
2611987
A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates
S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006
2452006
Hybrid-orientation technology (HOT): Opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
1962006
Atomic hydrogen reactions with P b centers at the (100) Si/SiO 2 interface
JH Stathis, E Cartier
Physical review letters 72 (17), 2745, 1994
1841994
Photoinduced hydrogen loss from porous silicon
RT Collins, MA Tischler, JH Stathis
Applied physics letters 61 (14), 1649-1651, 1992
1621992
Ultra-thin oxide reliability for ULSI applications
EY Wu, JH Stathis, LK Han
Semiconductor Science and Technology 15 (5), 425, 2000
1532000
Photoinduced paramagnetic defects in amorphous silicon dioxide
JH Stathis, MA Kastner
Physical Review B 29 (12), 7079, 1984
1461984
The impact of gate-oxide breakdown on SRAM stability
R Rodriguez, JH Stathis, BP Linder, S Kowalczyk, CT Chuang, RV Joshi, ...
IEEE Electron Device Letters 23 (9), 559-561, 2002
1332002
Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films
DJ DiMaria, JH Stathis
Journal of Applied Physics 89 (9), 5015-5024, 2001
1332001
Ultimate limit for defect generation in ultra-thin silicon dioxide
DJ DiMaria, JH Stathis
Applied physics letters 71 (22), 3230-3232, 1997
1261997
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
DJ DiMaria
Microelectronic engineering 36 (1-4), 317-320, 1997
1161997
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