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Rohit Reddy Karnaty
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引用次数
引用次数
年份
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (5), 681-684, 2020
652020
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT
P Shrestha, M Guidry, B Romanczyk, RR Karnaty, N Hatui, C Wurm, ...
2020 Device Research Conference (DRC), 1-2, 2020
82020
Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise
M Guidry, P Shrestha, W Liu, B Romanczyk, N Hatui, C Wurm, R Karnaty, ...
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 291-294, 2022
72022
Virtual-Source Modeling of N-polar GaN MISHEMTS
RR Karnaty, M Guidry, P Shrestha, B Romanczyk, N Hatui, X Zheng, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
52019
Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands
RR Karnaty, P Shrestha, M Guidry, B Romanczyk, UK Mishra, ...
IEEE Transactions on Microwave Theory and Techniques, 2023
12023
Reconfigurable Millimeter-wave Power Amplifiers in GaN and SOI using Passive Load Modulation
RR Karnaty, SM Chang, JF Buckwalter
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 990-993, 2022
12022
Modeling and Measurement of Dual-Threshold N-polar GaN HEMTS for High-Linearity RF Applications
RR Karnaty, P Shrestha, M Guidry, B Romanczyk, UK Mishra, ...
2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 20-23, 2023
2023
Novel approach to controlling linearity in n-polar gan mishemts
B Romanczyk, UK Mishra, P Shrestha, M Guidry, J Buckwalter, S Keller, ...
US Patent App. 17/353,665, 2021
2021
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