フォロー
Yoshio Honda
Yoshio Honda
Nagoya
確認したメール アドレス: nuee.nagoya-u.ac.jp
タイトル
引用先
引用先
Semiconductor device including an InGaAIN layer
N Sawaki, Y Honda, N Koide, K Furukawa
US Patent 6,635,901, 2003
187*2003
Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate
S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ...
Applied Physics Letters 112 (18), 2018
1782018
Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy
Y Honda, Y Kuroiwa, M Yamaguchi, N Sawaki
Applied Physics Letters 80 (2), 222-224, 2002
1592002
Semiconductor light emitting device and method for producing the same
N Koide, J Yamamoto, T Dohkita, N Sawaki, Y Honda, Y Kuroiwa, ...
US Patent 6,806,115, 2004
145*2004
Growth of (11̄01) GaN on a 7-degree off-oriented (0 0 1) Si substrate by selective MOVPE
Y Honda, N Kameshiro, M Yamaguchi, N Sawaki
Journal of crystal growth 242 (1-2), 82-86, 2002
1292002
Growth and properties of semi-polar GaN on a patterned silicon substrate
N Sawaki, T Hikosaka, N Koide, S Tanaka, Y Honda, M Yamaguchi
Journal of Crystal Growth 311 (10), 2867-2874, 2009
1152009
Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN
H Amano
Japanese Journal of Applied Physics 52 (5R), 050001, 2013
1092013
AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates
M Kim, T Fujita, S Fukahori, T Inazu, C Pernot, Y Nagasawa, A Hirano, ...
Applied physics express 4 (9), 092102, 2011
1092011
Growth of semi‐polar (11‐22) GaN on a (113) Si substrate by selective MOVPE
T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki
physica status solidi c 5 (9), 2966-2968, 2008
992008
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
BO Jung, SY Bae, Y Kato, M Imura, DS Lee, Y Honda, H Amano
CrystEngComm 16 (11), 2273-2282, 2014
982014
Improvement of light extraction efficiency for AlGaN-based deep ultraviolet light-emitting diodes
T Inazu, S Fukahori, C Pernot, MH Kim, T Fujita, Y Nagasawa, A Hirano, ...
Japanese Journal of Applied Physics 50 (12R), 122101, 2011
872011
Optical and electrical properties of grown on a 7° off-axis (001)Si substrate
T Hikosaka, T Narita, Y Honda, M Yamaguchi, N Sawaki
Applied physics letters 84 (23), 4717-4719, 2004
822004
Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ...
Applied Physics Express 12 (2), 026502, 2019
792019
Selective area growth of GaN on Si substrate using SiO 2 mask by metalorganic vapor phase epitaxy
YKY Kawaguchi, YHY Honda, HMH Matsushima, MYM Yamaguchi, ...
Japanese journal of applied physics 37 (8B), L966, 1998
761998
Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output
M Kaneda, C Pernot, Y Nagasawa, A Hirano, M Ippommatsu, Y Honda, ...
Japanese Journal of Applied Physics 56 (6), 061002, 2017
742017
Selective area growth of GaN microstructures on patterned (1 1 1) and (0 0 1) Si substrates
Y Honda, Y Kawaguchi, Y Ohtake, S Tanaka, M Yamaguchi, N Sawaki
Journal of crystal growth 230 (3-4), 346-350, 2001
682001
Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
L Sang, B Ren, M Sumiya, M Liao, Y Koide, A Tanaka, Y Cho, Y Harada, ...
Applied physics letters 111 (12), 2017
602017
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
X Yang, S Nitta, K Nagamatsu, SY Bae, HJ Lee, Y Liu, M Pristovsek, ...
Journal of Crystal Growth 482, 1-8, 2018
582018
On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
T Sakai, M Kushimoto, Z Zhang, N Sugiyama, LJ Schowalter, Y Honda, ...
Applied Physics Letters 116 (12), 2020
572020
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
BO Jung, SY Bae, SY Kim, S Lee, JY Lee, DS Lee, Y Kato, Y Honda, ...
Nano Energy 11, 294-303, 2015
572015
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論文 1–20