フォロー
Chad Huard
Chad Huard
確認したメール アドレス: umich.edu
タイトル
引用先
引用先
Photo–roll lithography (PRL) for continuous and scalable patterning with application in flexible electronics
JG Ok, MK Kwak, CM Huard, HS Youn, LJ Guo
Taylor and Francis, 2013
1122013
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions
CM Huard, Y Zhang, S Sriraman, A Paterson, KJ Kanarik, MJ Kushner
Journal of Vacuum Science & Technology A 35 (3), 2017
842017
Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation
S Huang, C Huard, S Shim, SK Nam, IC Song, S Lu, MJ Kushner
Journal of Vacuum Science & Technology A 37 (3), 2019
742019
Highly stable and stretchable graphene–polymer processed silver nanowires hybrid electrodes for flexible displays
Q Zhang, Y Di, CM Huard, LJ Guo, J Wei, J Guo
Journal of Materials Chemistry C 3 (7), 1528-1536, 2015
692015
Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features
CM Huard, Y Zhang, S Sriraman, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A 35 (5), 2017
652017
Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator
Y Zhang, C Huard, S Sriraman, J Belen, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A 35 (2), 021303, 2017
642017
Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas
CM Huard, S Sriraman, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A 36 (6), 2018
552018
Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors
M Chen, Y Wang, N Shepherd, C Huard, J Zhou, LJ Guo, W Lu, X Liang
ACS nano, 2017
482017
ITO‐free, compact, color liquid crystal devices using integrated structural color filters and graphene electrodes
J Guo, CM Huard, Y Yang, YJ Shin, K Lee, LJ Guo
Wiley Periodicals, Inc., 2014
432014
Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas
CM Huard, SJ Lanham, MJ Kushner
Journal of Physics D: Applied Physics 51 (15), 155201, 2018
202018
Electrowetting on flexible, transparent and conducting single-layer graphene
XB Tan, J Yang, P Zeng, EGR Kim, C Huard, MMC Cheng
2012 IEEE 25th International Conference on Micro Electro Mechanical Systems …, 2012
92012
Trilayer hardmask lithography and etch for BEOL manufacturing
P Panneerchelvam, CM Huard, A Agarwal, AV Pret, A Mani, R Gronheid, ...
Metrology, Inspection, and Process Control XXXVI 12053, 625-631, 2022
62022
Control and enhancement of graphene sensitivity by engineering edge defects
X Tan, C Huard, HJ Chuang, MW Lin, Z Zhou, MMC Cheng
SENSORS, 2012 IEEE, 1-4, 2012
52012
Evolution of lithography-to-etch bias in multi-patterning processes
P Panneerchelvam, A Agarwal, CM Huard, AV Pret, A Mani, R Gronheid, ...
Journal of Vacuum Science & Technology B 40 (6), 2022
42022
System and Method to Adjust A Kinetics Model of Surface Reactions During Plasma Processing
AA Agarwal, C Huard, Y Zhang, H Pu, X Li, P Panneerchelvam, F Han, ...
US Patent App. 16/872,879, 2021
32021
Process optimization for shallow trench isolation etch using computational models
S Huang, P Panneerchelvam, CM Huard, S Sridhar, PLG Ventzek, ...
Journal of Vacuum Science & Technology A 41 (5), 2023
12023
On the origin and evolution of hotspots in multipatterning processes
P Panneerchelvam, CM Huard, T Graves, AV Pret, R Gronheid, A Agarwal, ...
Journal of Vacuum Science & Technology B 41 (4), 2023
12023
Nano-Scale Feature Profile Modeling of Plasma Material Processing
CM Huard
Ph. D. Thesis, 2018
12018
Contact Edge Roughness In The Etching Of High Aspect Ratio Contacts In Sio2
S Huang, C Huard, MJ Kushner, S Shim, S Lee, IC Song, S Lu
2017 IEEE International Conference on Plasma Science (ICOPS), 1-1, 2017
12017
Origins of aspect ratio dependent etching in plasma materials processing
CM Huard, MJ Kushner, Y Zhang, S Sriraman, JR Belen, A Paterson
2016 IEEE International Conference on Plasma Science (ICOPS), 1-1, 2016
12016
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