フォロー
Ming liu
Ming liu
Institute of Microelectronics, Chinese Academy of Sciences
確認したメール アドレス: なし
タイトル
引用先
引用先
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application
YC Yang, F Pan, Q Liu, M Liu, F Zeng
Nano letters 9 (4), 1636-1643, 2009
9742009
Tumor immune microenvironment characterization in clear cell renal cell carcinoma identifies prognostic and immunotherapeutically relevant messenger RNA signatures
Y Şenbabaoğlu, RS Gejman, AG Winer, M Liu, EM Van Allen, ...
Genome biology 17, 1-25, 2016
7672016
Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM
Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu
Advanced Materials 24 (14), 1844, 2012
7122012
Two-dimensional materials for next-generation computing technologies
C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou
Nature Nanotechnology 15 (7), 545-557, 2020
6042020
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
5692019
Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2
XQ Wei, BY Man, M Liu, CS Xue, HZ Zhuang, C Yang
Physica B: Condensed Matter 388 (1-2), 145-152, 2007
5012007
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode
Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu
ACS nano 4 (10), 6162-6168, 2010
4722010
Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications
Y Wang, Q Liu, S Long, W Wang, Q Wang, M Zhang, S Zhang, Y Li, Q Zuo, ...
Nanotechnology 21 (4), 045202, 2009
3722009
Recent advances in synthesis and surface modification of lanthanide-doped upconversion nanoparticles for biomedical applications
M Lin, Y Zhao, SQ Wang, M Liu, ZF Duan, YM Chen, F Li, F Xu, TJ Lu
Biotechnology advances 30 (6), 1551-1561, 2012
3542012
Aluminum‐doped cesium lead bromide perovskite nanocrystals with stable blue photoluminescence used for display backlight
M Liu, G Zhong, Y Yin, J Miao, K Li, C Wang, X Xu, C Shen, H Meng
Advanced Science 4 (11), 1700335, 2017
3462017
Resistive switching memory effect of ZrO2 films with Zr+ implanted
Q Liu, W Guan, S Long, R Jia, M Liu, J Chen
Applied physics letters 92 (1), 2008
3382008
Nucleation-controlled growth of superior lead-free perovskite Cs3Bi2I9 single-crystals for high-performance X-ray detection
Y Zhang, Y Liu, Z Xu, H Ye, Z Yang, J You, M Liu, Y He, MG Kanatzidis, ...
Nature communications 11 (1), 2304, 2020
3222020
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology
H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu
Advanced Functional Materials 24 (36), 5679-5686, 2014
3222014
Nonpolar Nonvolatile Resistive Switching in Cu Doped
W Guan, S Long, Q Liu, M Liu, W Wang
IEEE Electron Device Letters 29 (5), 434-437, 2008
3162008
An artificial neuron based on a threshold switching memristor
X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ...
IEEE Electron Device Letters 39 (2), 308-311, 2017
2842017
A 1300 mm2 Ultrahigh‐Performance Digital Imaging Assembly using High‐Quality Perovskite Single Crystals
Y Liu, Y Zhang, K Zhao, Z Yang, J Feng, X Zhang, K Wang, L Meng, H Ye, ...
Advanced materials 30 (29), 1707314, 2018
2832018
An artificial spiking afferent nerve based on Mott memristors for neurorobotics
X Zhang, Y Zhuo, Q Luo, Z Wu, R Midya, Z Wang, W Song, R Wang, ...
Nature communications 11 (1), 51, 2020
2772020
Improvement of Resistive Switching Properties in -Based ReRAM With Implanted Ti Ions
Q Liu, S Long, W Wang, Q Zuo, S Zhang, J Chen, M Liu
IEEE Electron Device Letters 30 (12), 1335-1337, 2009
2592009
Improvement of Resistive Switching Properties in -Based ReRAM With Implanted Ti Ions
Q Liu, S Long, W Wang, Q Zuo, S Zhang, J Chen, M Liu
IEEE Electron Device Letters 30 (12), 1335-1337, 2009
2592009
Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide
W Guan, S Long, R Jia, M Liu
Applied Physics Letters 91 (6), 2007
2432007
現在システムで処理を実行できません。しばらくしてからもう一度お試しください。
論文 1–20