| Total Ionizing Dose Effects on Strained nMOSFET H Park, SK Dixit, YS Choi, RD Schrimpf, DM Fleetwood, T Nishida, ... Nuclear Science, IEEE Transactions on 55 (6), 2981-2985, 2008 | 33* | 2008 |
| Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors SY Son, YS Choi, P Kumar, HW Park, T Nishida, RK Singh, SE Thompson Applied Physics Letters 93 (15), 2008 | 18 | 2008 |
| Laser-induced current transients in strained-Si diodes H Park, DJ Cummings, R Arora, JA Pellish, RA Reed, RD Schrimpf, ... IEEE Transactions on Nuclear Science 56 (6), 3203-3209, 2009 | 14 | 2009 |
| Mobility modeling considerations for radiation effects simulations in silicon DJ Cummings, AF Witulski, H Park, RD Schrimpf, SE Thompson, ME Law IEEE Transactions on Nuclear Science 57 (4), 2318-2326, 2010 | 12 | 2010 |
| 7nm mobile soc and 5g platform technology and design co-development for ppa and manufacturability M Cai, H Park, J Yang, Y Suh, J Chen, Y Gao, L Chang, J Zhu, SC Song, ... 2019 Symposium on VLSI Technology, T104-T105, 2019 | 11 | 2019 |
| A new driving method to compensate for row‐line signal‐propagation delays in an AMLCD SH Kim, H Park, S Kim, R McCartney Journal of the Society for Information Display 14 (4), 379-386, 2012 | 9 | 2012 |
| Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown YS Choi, H Park, T Nishida, SE Thompson Journal of Applied Physics 105 (4), 2009 | 9 | 2009 |
| Electrical models of TFT‐LCD panels for circuit simulations H Park, S Kim, S Kim, Y Jo, S Kim, RI McCartney Journal of the Society for Information Display 16 (3), 509-515, 2008 | 6 | 2008 |
| 9.2: A New Driving Method to Compensate for Row Line Signal Propagation Delays in an AMLCD and Analysis Using a Distributed Electrical Model RI McCartney, SH Kim, HW Park, S Kim SID Symposium Digest of Technical Papers 36 (1), 128-131, 2005 | 5 | 2005 |
| An adaptive grid scheme for single-event upset device simulations DJ Cummings, H Park, SE Thompson, ME Law IEEE Transactions on Nuclear Science 57 (6), 3239-3244, 2010 | 3 | 2010 |
| Analysis of row and column lines in TFT-LCD panels with a distributed electrical model HW Park, SH Kim, GB Kim, SW Hwang, SK Kim, RI McCartney 한국정보디스플레이학회 International Meeting, 882-886, 2005 | 3 | 2005 |
| Integrated device comprising a CMOS structure comprising well-less transistors SS Song, H Park, P Feng US Patent 11,502,079, 2022 | 1 | 2022 |
| P‐54: The Charging Difference Minimization of the Physically Divided A‐Si TFT LCD Panel for Dual Scanning K Song, J Her, E Lee, S Kim, H Park SID Symposium Digest of Technical Papers 36 (1), 479-481, 2005 | 1 | 2005 |
| Leakage current reduction in polysilicon-on-active-edge structures YS Choi, LIM Kwanyong, YS Suh, H Park US Patent 11,444,201, 2022 | | 2022 |
| Gate-to-contact short prevention with an inner spacer YS Suh, H Park, YS Choi, LIM Kwanyong US Patent App. 17/141,016, 2022 | | 2022 |
| Fin field-effect transistor (fet)(finfet) circuits employing replacement n-type fet (nfet) source/drain (s/d) to avoid or prevent short defects and related methods of fabrication LIM Kwanyong, H Park, YS Choi, YS Suh US Patent App. 16/682,788, 2021 | | 2021 |
| Sensor for gate leakage detection H Park, YS Choi, SS Song US Patent 10,996,261, 2021 | | 2021 |
| Impact of uniaxial stress on silicon diodes and metal-oxide-semiconductor-field-effect-transistors under radiation H Park University of Florida, 2011 | | 2011 |
| Development of Electrical Models of TFT-LCD Panels for Circuit Simulation HW Park, SH Kim, SH Kim, SK Kim, RI McCartney 한국정보디스플레이학회 International Meeting, 733-738, 2006 | | 2006 |
| Universal Core Model for Multiple-gate Field-effect Transistors with Short Channel and Quantum Mechanical Effects | | |
