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KOJI NII
KOJI NII
TSMC Design Technology Japan, Inc.
Verified email at tsmc.com
Title
Cited by
Cited by
Year
Semiconductor storage device
N Tsuda, K Nii
US Patent 6,535,417, 2003
2752003
Semiconductor memory device
K Nii, S Obayashi, H Makino, K Ishibashi, H Shinohara
US Patent 7,502,275, 2009
2332009
Semiconductor memory device capable of generating internal data read timing precisely
Y Nakase, K Nii
US Patent 6,760,269, 2004
2222004
Low-power embedded SRAM modules with expanded margins for writing
M Yamaoka, N Maeda, Y Shinozaki, Y Shimazaki, K Nii, S Shimada, ...
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State …, 2005
2122005
A 65-nm SoC embedded 6T-SRAM designed for manufacturability with read and write operation stabilizing circuits
S Ohbayashi, M Yabuuchi, K Nii, Y Tsukamoto, S Imaoka, Y Oda, ...
IEEE journal of solid-state circuits 42 (4), 820-829, 2007
1982007
An area-conscious low-voltage-oriented 8T-SRAM design under DVS environment
Y Morita, H Fujiwara, H Noguchi, Y Iguchi, K Nii, H Kawaguchi, ...
2007 IEEE Symposium on VLSI Circuits, 256-257, 2007
1802007
Semiconductor memory device
K Nii, A Miyanishi
US Patent 6,347,062, 2002
1802002
A low power SRAM using auto-backgate-controlled MT-CMOS
K Nii, H Makino, Y Tujihashi, C Morishima, Y Hayakawa, H Nunogami, ...
Proceedings. 1998 International Symposium on Low Power Electronics and …, 1998
1681998
A 45-nm single-port and dual-port SRAM family with robust read/write stabilizing circuitry under DVFS environment
K Nii, M Yabuuchi, Y Tsukamoto, S Ohbayashi, Y Oda, K Usui, ...
2008 IEEE Symposium on VLSI Circuits, 212-213, 2008
1532008
Which is the best dual-port SRAM in 45-nm process technology?—8T, 10T single end, and 10T differential—
H Noguchi, S Okumura, Y Iguchi, H Fujiwara, Y Morita, K Nii, ...
2008 IEEE International Conference on Integrated Circuit Design and …, 2008
1402008
A 90-nm low-power 32-kB embedded SRAM with gate leakage suppression circuit for mobile applications
K Nii, Y Tsukamoto, T Yoshizawa, S Imaoka, Y Yamagami, T Suzuki, ...
IEEE Journal of Solid-State Circuits 39 (4), 684-693, 2004
1382004
90-nm process-variation adaptive embedded SRAM modules with power-line-floating write technique
M Yamaoka, N Maeda, Y Shinozaki, Y Shimazaki, K Nii, S Shimada, ...
IEEE Journal of Solid-State Circuits 41 (3), 705-711, 2006
1232006
Semiconductor memory device with adjustable selected work line potential under low voltage condition
K Nii, S Ohbayashi, Y Tsukamoto, M Yabuuchi
US Patent 7,570,525, 2009
1202009
Semiconductor memory device with back gate potential control circuit for transistor in memory cell
Y Tsukamoto, K Nii
US Patent 7,079,413, 2006
1172006
Semiconductor integrated circuit device
N Maeda, Y Shinozaki, M Yamaoka, Y Shimazaki, M Isoda, K Nii
US Patent 7,113,421, 2006
1092006
A 45nm 0.6 V cross-point 8T SRAM with negative biased read/write assist
M Yabuuchi, K Nii, Y Tsukamoto, S Ohbayashi, Y Nakase, H Shinohara
2009 Symposium on VLSI Circuits, 158-159, 2009
1042009
A 45-nm bulk CMOS embedded SRAM with improved immunity against process and temperature variations
K Nii, M Yabuuchi, Y Tsukamoto, S Ohbayashi, S Imaoka, H Makino, ...
IEEE Journal of Solid-State Circuits 43 (1), 180-191, 2008
872008
A 65 nm embedded sram with wafer level burn-in mode, leak-bit redundancy and cu e-trim fuse for known good die
S Ohbayashi, M Yabuuchi, K Kono, Y Oda, S Imaoka, K Usui, T Yonezu, ...
IEEE journal of solid-state circuits 43 (1), 96-108, 2008
872008
A 45nm low-standby-power embedded SRAM with improved immunity against process and temperature variations
M Yabuuchi, K Nii, Y Tsukamoto, S Ohbayashi, S Imaoka, H Makino, ...
2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007
862007
A 250-MHz 18-Mb full ternary CAM with low-voltage matchline sensing scheme in 65-nm CMOS
I Hayashi, T Amano, N Watanabe, Y Yano, Y Kuroda, M Shirata, K Dosaka, ...
IEEE journal of solid-state circuits 48 (11), 2671-2680, 2013
792013
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