| Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K V Reboud, A Gassenq, N Pauc, J Aubin, L Milord, QM Thai, M Bertrand, ... Applied Physics Letters 111 (9), 2017 | 195 | 2017 |
| GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain J Chrétien, N Pauc, F Armand Pilon, M Bertrand, QM Thai, L Casiez, ... Acs Photonics 6 (10), 2462-2469, 2019 | 135 | 2019 |
| Lasing in strained germanium microbridges FT Armand Pilon, A Lyasota, YM Niquet, V Reboud, V Calvo, N Pauc, ... Nature communications 10 (1), 2724, 2019 | 125 | 2019 |
| GeSn heterostructure micro-disk laser operating at 230 K QM Thai, N Pauc, J Aubin, M Bertrand, J Chrétien, V Delaye, A Chelnokov, ... Optics express 26 (25), 32500-32508, 2018 | 95 | 2018 |
| Growth and structural properties of step-graded, high Sn content GeSn layers on Ge J Aubin, JM Hartmann, A Gassenq, JL Rouviere, E Robin, V Delaye, ... Semiconductor Science and Technology 32 (9), 094006, 2017 | 91 | 2017 |
| 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ... Applied Physics Letters 107 (19), 2015 | 89 | 2015 |
| Effect of HCl on the doping and shape control of silicon nanowires P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ... Nanotechnology 23 (21), 215702, 2012 | 89 | 2012 |
| Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy, J Rothman, D Rouchon, ... Applied Physics Letters 110 (11), 2017 | 80 | 2017 |
| Germanium based photonic components toward a full silicon/germanium photonic platform V Reboud, A Gassenq, JM Hartmann, J Widiez, L Virot, J Aubin, K Guilloy, ... Progress in Crystal growth and Characterization of Materials 63 (2), 1-24, 2017 | 72 | 2017 |
| Spin injection in silicon at zero magnetic field L Grenet, M Jamet, P Noé, V Calvo, JM Hartmann, LE Nistor, B Rodmacq, ... Applied Physics Letters 94 (3), 2009 | 71 | 2009 |
| Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ... ACS photonics 3 (10), 1907-1911, 2016 | 70 | 2016 |
| Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method O Demichel, V Calvo, A Besson, P Noé, B Salem, N Pauc, F Oehler, ... Nano letters 10 (7), 2323-2329, 2010 | 66 | 2010 |
| Impact of thickness on the structural properties of high tin content GeSn layers J Aubin, JM Hartmann, A Gassenq, L Milord, N Pauc, V Reboud, V Calvo Journal of Crystal Growth 473, 20-27, 2017 | 62 | 2017 |
| Two-dimensional electron-hole liquid in single Si quantum wells with large electronic and dielectric confinement N Pauc, V Calvo, J Eymery, F Fournel, N Magnea Physical review letters 92 (23), 236802, 2004 | 62 | 2004 |
| Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region A Elbaz, R Arefin, E Sakat, B Wang, E Herth, G Patriarche, A Foti, ... ACS photonics 7 (10), 2713-2722, 2020 | 54 | 2020 |
| Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress A Gassenq, S Tardif, K Guilloy, I Duchemin, N Pauc, JM Hartmann, ... Journal of Applied Physics 121 (5), 2017 | 53 | 2017 |
| Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction K Guilloy, N Pauc, A Gassenq, P Gentile, S Tardif, F Rieutord, V Calvo Nano Letters 15 (4), 2429-2433, 2015 | 51 | 2015 |
| Accurate strain measurements in highly strained Ge microbridges A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ... Applied Physics Letters 108 (24), 2016 | 50 | 2016 |
| Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers JM Hartmann, JP Barnes, M Veillerot, JM Fédéli, QBA La Guillaume, ... Journal of crystal growth 347 (1), 37-44, 2012 | 42 | 2012 |
| Electronic and optical properties of nanostructures. I. Electron-hole collective processes in single quantum wells N Pauc, V Calvo, J Eymery, F Fournel, N Magnea Physical Review B 72 (20), 205324, 2005 | 40 | 2005 |
