フォロー
Kun Yang
Kun Yang
その他の名前양건건, K Yang
確認したメール アドレス: snu.ac.kr - ホームページ
タイトル
引用先
引用先
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ...
Journal of Materials Chemistry C 8 (31), 10526-10550, 2020
1202020
Domains and domain dynamics in fluorite-structured ferroelectrics
DH Lee, Y Lee, K Yang, JY Park, SH Kim, PRS Reddy, M Materano, ...
Applied Physics Reviews 8 (2), 2021
612021
A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective
JY Park, K Yang, DH Lee, SH Kim, Y Lee, PR Reddy, JL Jones, MH Park
Journal of Applied Physics 128 (24), 2020
602020
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ...
Advanced Materials 35 (43), 2204904, 2023
562023
Neuromorphic devices based on fluorite‐structured ferroelectrics
DH Lee, GH Park, SH Kim, JY Park, K Yang, S Slesazeck, T Mikolajick, ...
InfoMat 4 (12), e12380, 2022
242022
Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films
DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ...
Acta Materialia 222, 117405, 2022
192022
Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer
SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ...
Chemical Communications 57 (93), 12452-12455, 2021
192021
Engineering strategies in emerging fluorite-structured ferroelectrics
JY Park, DH Lee, K Yang, SH Kim, GT Yu, GH Park, EB Lee, KH Kim, ...
ACS Applied Electronic Materials 4 (4), 1369-1380, 2021
162021
Perspective on ferroelectric devices: lessons from interfacial chemistry
K Yang, SH Kim, HW Jeong, DH Lee, GH Park, Y Lee, MH Park
Chemistry of Materials 35 (6), 2219-2237, 2023
122023
Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices
Y Lee, HW Jeong, SH Kim, K Yang, MH Park
Materials Science in Semiconductor Processing 160, 107411, 2023
92023
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
J Lee, K Yang, JY Kwon, JE Kim, DI Han, DH Lee, JH Yoon, MH Park
Nano Convergence 10 (1), 55, 2023
72023
Wake-up-mitigated giant ferroelectricity in Hf0. 5Zr0. 5O2 thin films through oxygen-providing, surface-oxidized W electrode
K Yang, GY Kim, JJ Ryu, DH Lee, JY Park, SH Kim, GH Park, GT Yu, ...
Materials Science in Semiconductor Processing 164, 107565, 2023
72023
Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates
K Yang, EB Lee, DH Lee, JY Park, SH Kim, GH Park, GT Yu, JI Lee, ...
Composites Part B: Engineering 236, 109824, 2022
72022
Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films
AJ Cho, J Jeon, HK Chung, IH Baek, K Yang, MH Park, SH Baek, SK Kim
Ceramics International 48 (3), 3280-3286, 2022
62022
Review of Electrical Characterization of Ceramic Thin Films for the Next Generation Semiconductor Devices
D Lee, K Yang, JY Park, MH Park
Ceramist 22 (4), 332-349, 2019
52019
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)
JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ...
Advanced Materials 35 (43), 2370312, 2023
12023
A brief review on the effect of impurities on the atomic layer deposited fluorite-structure ferroelectrics
DH Lee, K Yang, JY Park, MH Park
Journal of the Korean institute of surface engineering 53 (4), 169-181, 2020
12020
Depolarization mitigated in ferroelectric Hf0.5Zr0.5O2 ultrathin films (< 5 nm) on Si substrate by interface engineering.
SH Kim, Y Lee, DH Lee, GH Park, HW Jeong, K Yang, YH Cho, YY Kim, ...
Journal of Advanced Ceramics 13 (3), 2024
2024
Ferroelectricity of HfZrO Thin Film Induced at 350 C by Thermally Accelerated Nucleation During Atomic Layer Deposition
J Lee, SH Kim, H Choi, HW Jeong, K Yang, JY Park, YH Cho, SY Park, ...
IEEE Transactions on Electron Devices, 2024
2024
Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry
H Choi, YH Cho, SH Kim, K Yang, MH Park
The Journal of Physical Chemistry Letters 15, 983-997, 2024
2024
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