Kazuhisa Hoshi
Kazuhisa Hoshi
確認したメール アドレス: ed.tmu.ac.jp
Evolution of Anisotropic Displacement Parameters and Superconductivity with Chemical Pressure in BiS2-Based REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd)
Y Mizuguchi, K Hoshi, Y Goto, A Miura, K Tadanaga, C Moriyoshi, ...
Journal of the Physical Society of Japan 87 (2), 023704, 2018
Selenium isotope effect in the layered bismuth chalcogenide superconductor
K Hoshi, Y Goto, Y Mizuguchi
Physical Review B 97 (9), 094509, 2018
Doping-Induced Polymorph and Carrier Polarity Changes in Thermoelectric Ag(Bi,Sb)Se2 Solid Solution
K Sudo, Y Goto, R Sogabe, K Hoshi, A Miura, C Moriyoshi, Y Kuroiwa, ...
Inorganic chemistry, 2019
High-pressure synthesis and superconducting properties of NaCl-type In1-xPbxTe (x= 0-0.8)
M Katsuno, R Jha, K Hoshi, R Sogabe, Y Goto, Y Mizuguchi
arXiv preprint arXiv:1909.01665, 2019
Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe
K Hoshi, M Kimata, Y Goto, TD Matsuda, Y Mizuguchi
Journal of the Physical Society of Japan 88 (3), 033704, 2019
Indication of unconventional superconductivity in layered bismuth chalcogenide superconductor LaO0. 6F0. 4Bi (S, Se) 2 revealed by Se isotope effect
K Hoshi, Y Goto, Y Mizuguchi
arXiv preprint arXiv:1708.08252, 2017
論文 1–6