Dielectric properties of (Ba, Sr) TiO3 thin films deposited by RF sputtering T Horikawa, N Mikami, T Makita, J Tanimura, M Kataoka, KSK Sato, ... Japanese Journal of Applied Physics 32 (9S), 4126, 1993 | 325 | 1993 |
50-Gb/s ring-resonator-based silicon modulator T Baba, S Akiyama, M Imai, N Hirayama, H Takahashi, Y Noguchi, ... Optics express 21 (10), 11869-11876, 2013 | 231 | 2013 |
Dielectric properties of (BaxSr1-x) TiO3 thin films prepared by RF sputtering for dynamic random access memory application T Kuroiwa, Y Tsunemine, T Horikawa, T Makita, J Tanimura, NMN Mikami, ... Japanese journal of applied physics 33 (9S), 5187, 1994 | 155 | 1994 |
First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate Y Urino, T Shimizu, M Okano, N Hatori, M Ishizaka, T Yamamoto, T Baba, ... Optics express 19 (26), B159-B165, 2011 | 128 | 2011 |
Semiconductor device and manufacturing method thereof T Horikawa US Patent 6,563,182, 2003 | 124 | 2003 |
Dielectric relaxation of (Ba, Sr) TiO3 thin films T Horikawa, T Makita, T Kuroiwa, NMN Mikami Japanese journal of applied physics 34 (9S), 5478, 1995 | 120 | 1995 |
Comparative studies on oxygen diffusion coefficients for amorphous and γ-Al2O3 films using 18O isotope T Nabatame, T Yasuda, M Nishizawa, M Ikeda, T Horikawa, A Toriumi Japanese journal of applied physics 42 (12R), 7205, 2003 | 107 | 2003 |
Low-loss silicon wire waveguides for optical integrated circuits T Horikawa, D Shimura, T Mogami MRS Communications 6 (1), 9-15, 2016 | 95 | 2016 |
12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode S Akiyama, T Baba, M Imai, T Akagawa, M Takahashi, N Hirayama, ... Optics express 20 (3), 2911-2923, 2012 | 94 | 2012 |
A newly designed planar stacked capacitor cell with high dielectric constant film for 256 Mbit DRAM T Eimori, Y Ohno, H Kimura, J Matsufusa, S Kishimura, A Yoshida, ... Proceedings of IEEE International Electron Devices Meeting, 631-634, 1993 | 91 | 1993 |
Thermal stability of a thin HfO2/ultrathin SiO2/Si structure: interfacial Si oxidation and silicidation N Miyata, M Ichikawa, T Nabatame, T Horikawa, A Toriumi Japanese journal of applied physics 42 (2B), L138, 2003 | 89 | 2003 |
A 300-mm silicon photonics platform for large-scale device integration T Horikawa, D Shimura, H Okayama, SH Jeong, H Takahashi, J Ushida, ... IEEE Journal of Selected Topics in Quantum Electronics 24 (4), 1-15, 2018 | 84 | 2018 |
Graph-theoretical formula for ring currents induced in a polycyclic conjugated system J Aihara, T Horikawa Bulletin of the Chemical Society of Japan 56 (6), 1853-1854, 1983 | 84 | 1983 |
Demonstration of 12.5-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate Y Urino, Y Noguchi, M Noguchi, M Imai, M Yamagishi, S Saitou, ... Optics express 20 (26), B256-B263, 2012 | 77 | 2012 |
Compact PIN-diode-based silicon modulator using side-wall-grating waveguide S Akiyama, M Imai, T Baba, T Akagawa, N Hirayama, Y Noguchi, M Seki, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (6), 74-84, 2013 | 75 | 2013 |
Novel stacked capacitor technology for 1 Gbit DRAMs with CVD-(Ba, Sr) TiO/sub 3/thin films on a thick storage node of Ru A Yuuki, M Yamamuka, T Makita, T Horikawa, T Shibano, N Hirano, ... Proceedings of International Electron Devices Meeting, 115-118, 1995 | 73 | 1995 |
Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer SH Jeong, D Shimura, T Simoyama, M Seki, N Yokoyama, M Ohtsuka, ... Optics express 21 (25), 30163-30174, 2013 | 67 | 2013 |
First demonstration of athermal silicon optical interposers with quantum dot lasers operating up to 125 C Y Urino, N Hatori, K Mizutani, T Usuki, J Fujikata, K Yamada, T Horikawa, ... Journal of Lightwave Technology 33 (6), 1223-1229, 2014 | 66 | 2014 |
Si-nanowire-based multistage delayed Mach–Zehnder interferometer optical MUX/DeMUX fabricated by an ArF-immersion lithography process on a 300 mm SOI wafer SH Jeong, D Shimura, T Simoyama, T Horikawa, Y Tanaka, K Morito Optics letters 39 (13), 3702-3705, 2014 | 60 | 2014 |
High-density and wide-bandwidth optical interconnects with silicon optical interposers Y Urino, T Usuki, J Fujikata, M Ishizaka, K Yamada, T Horikawa, ... Photonics Research 2 (3), A1-A7, 2014 | 55 | 2014 |