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Jessica Doherty
Jessica Doherty
所属不明
確認したメール アドレス: umail.ucc.ie
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引用先
引用先
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
S Biswas, J Doherty, D Saladukha, Q Ramasse, D Majumdar, M Upmanyu, ...
Nature communications 7 (1), 11405, 2016
1352016
Progress on germanium–tin nanoscale alloys
J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ...
Chemistry of Materials 32 (11), 4383-4408, 2020
472020
One-Step fabrication of GeSn branched nanowires
J Doherty, S Biswas, D McNulty, C Downing, S Raha, C O’Regan, ...
Chemistry of Materials 31 (11), 4016-4024, 2019
322019
Diameter-controlled germanium nanowires with lamellar twinning and polytypes
S Biswas, J Doherty, D Majumdar, T Ghoshal, K Rahme, M Conroy, ...
Chemistry of Materials 27 (9), 3408-3416, 2015
292015
Influence of growth kinetics on Sn incorporation in direct band gap Ge 1− x Sn x nanowires
J Doherty, S Biswas, D Saladukha, Q Ramasse, TS Bhattacharya, ...
Journal of Materials Chemistry C 6 (32), 8738-8750, 2018
242018
Germanium tin alloy nanowires as anode materials for high performance Li-ion batteries
J Doherty, D McNulty, S Biswas, K Moore, M Conroy, U Bangert, ...
Nanotechnology 31 (16), 165402, 2020
202020
Investigating the mechanical properties of GeSn nanowires
J Kosmaca, R Meija, M Antsov, G Kunakova, R Sondors, I Iatsunskyi, ...
Nanoscale 11 (28), 13612-13619, 2019
142019
Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices
E Galluccio, J Doherty, S Biswas, JD Holmes, R Duffy
ACS Applied Electronic Materials 2 (5), 1226-1234, 2020
132020
Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0. 92Sn0. 08
E Galluccio, N Petkov, G Mirabelli, J Doherty, SY Lin, FL Lu, CW Liu, ...
Thin Solid Films 690, 137568, 2019
122019
Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors
S Biswas, J Doherty, E Galluccio, HG Manning, M Conroy, R Duffy, ...
ACS Applied Nano Materials 4 (2), 1048-1056, 2021
52021
Stabilization of Black Phosphorus by Sonication‐Assisted Simultaneous Exfoliation and Functionalization
M van Druenen, T Collins, F Davitt, J Doherty, G Collins, Z Sofer, ...
Chemistry–A European Journal 26 (72), 17581-17587, 2020
42020
Optical study of strain-free GeSn nanowires
D Saladukha, J Doherty, S Biswas, TJ Ochalski, JD Holmes
Silicon Photonics XII 10108, 270-275, 2017
42017
Lattice dynamics of Ge 1− x Sn x alloy nanowires
S Raha, S Biswas, J Doherty, PK Mondal, JD Holmes, A Singha
Nanoscale 14 (19), 7211-7219, 2022
2022
Raman spectroscopy of group-IV GeSn alloys: theory and experiment
DSP Tanner, S Raha, J Doherty, S Biswas, JD Holmes, EP O'Reilly, ...
arXiv preprint arXiv:2112.00523, 2021
2021
Formation and characterisation of Ni, Pt, and Ti stanogermanide contacts on
E Galluccio, N Petkov, G Mirabelli, J Doherty, SY Lin, FL Lu, CW Liu, ...
2019
Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08
E Galluccio, N Petkov, G Mirabelli, J Doherty, SV Lin, FL Lu, CW Liu, ...
2019 Joint International EUROSOI Workshop and International Conference on …, 2019
2019
Direct Bandgap Ge1-xSnx (x= 0.10) Nanowires in Photodetection
J Doherty, M Rao, D Saladukha, H Manning, M Conroy, K Moore, ...
Germanium tin nanowires: synergy at the nanoscale, 157, 2018
2018
Supercritical Fluid Growth of High Sn Content Ge1-xSnx (x> 0.3) Nanowires
J Doherty, S Biswas, M Conroy, K Moore, U Bangert
Germanium tin nanowires: synergy at the nanoscale, 246, 2018
2018
Germanium tin nanowires: synergy at the nanoscale
J Doherty
University College Cork, 2018
2018
This is a repository copy of Influence of growth kinetics on Sn incorporation in direct band gap Ge-xSnx nanowires ₁.
J Doherty, S Biswas, D Saladukha
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