| Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer Z Zhang, G Yu, X Zhang, X Deng, S Li, Y Fan, S Sun, L Song, S Tan, D Wu, ... IEEE Transactions on Electron Devices 63 (2), 731-738, 2016 | 110 | 2016 |
| Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs R Hao, W Li, K Fu, G Yu, L Song, J Yuan, J Li, X Deng, X Zhang, Q Zhou, ... IEEE Electron Device Letters 38 (11), 1567-1570, 2017 | 95 | 2017 |
| Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment R Hao, K Fu, G Yu, W Li, J Yuan, L Song, Z Zhang, S Sun, X Li, Y Cai, ... Applied Physics Letters 109 (15), 2016 | 89 | 2016 |
| AlGaN/GaN MIS-HEMTs of Very-Low Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator Z Zhang, W Li, K Fu, G Yu, X Zhang, Y Zhao, S Sun, L Song, X Deng, ... IEEE Electron Device Letters 38 (2), 236-239, 2016 | 56 | 2016 |
| 6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ... IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021 | 45 | 2021 |
| N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ... IEEE Electron Device Letters 41 (11), 1633-1636, 2020 | 40 | 2020 |
| Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid Z Zhang, S Qin, K Fu, G Yu, W Li, X Zhang, S Sun, L Song, S Li, R Hao, ... Applied Physics Express 9 (8), 084102, 2016 | 28 | 2016 |
| Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN SS Pasayat, N Hatui, W Li, C Gupta, S Nakamura, SP Denbaars, S Keller, ... Applied Physics Letters 117 (6), 2020 | 20 | 2020 |
| Bandgap engineering of monolayer MoS2 under strain: A DFT study C Li, B Fan, W Li, L Wen, Y Liu, T Wang, K Sheng, Y Yin Journal of the Korean Physical Society 66, 1789-1793, 2015 | 20 | 2015 |
| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 18 | 2023 |
| Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... Journal of Applied Physics 131 (1), 2022 | 12 | 2022 |
| First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel W Li, S Pasayat, M Guidry, B Romanczyk, X Zheng, C Gupta, N Hatui, ... Semiconductor Science and Technology 35 (7), 2020 | 11 | 2020 |
| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters, 2023 | 9 | 2023 |
| Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability W Li, Z Zhang, K Fu, G Yu, X Zhang, S Sun, L Song, R Hao, Y Fan, Y Cai, ... Journal of Semiconductors 38 (7), 074001, 2017 | 9 | 2017 |
| Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ... 2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022 | 8 | 2022 |
| Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs L Song, K Fu, Z Zhang, S Sun, W Li, G Yu, R Hao, Y Fan, W Shi, Y Cai, ... AIP Advances 7 (12), 2017 | 5 | 2017 |
| Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate Z Zhang, L Song, W Li, K Fu, G Yu, X Zhang, Y Fan, X Deng, S Li, S Sun, ... Solid-State Electronics 134, 39-45, 2017 | 4 | 2017 |
| Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz E Akso, C Clymore, W Liu, H Collins, B Romanczyk, W Li, N Hatui, ... 2023 Device Research Conference (DRC), 1-2, 2023 | 3 | 2023 |
| Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate N Hatui, H Collins, E Kayede, SS Pasayat, W Li, S Keller, UK Mishra Crystals 12 (7), 989, 2022 | 3 | 2022 |
| Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films H Collins, I Sayed, W Liu, SS Pasayat, AA Taylor, W Li, S Keller, ... Applied Physics Letters 119 (4), 2021 | 3 | 2021 |
Stacia KellerUniversity of California Santa Barbara在 ece.ucsb.edu 的电子邮件经过验证
