| Cavity suppression in nitride based superluminescent diodes A Kafar, S Stańczyk, S Grzanka, R Czernecki, M Leszczyński, T Suski, ... Journal of Applied Physics 111 (8), 2012 | 45 | 2012 |
| Graded-index separate confinement heterostructure InGaN laser diodes S Stańczyk, T Czyszanowski, A Kafar, J Goss, S Grzanka, E Grzanka, ... Applied Physics Letters 103 (26), 2013 | 44 | 2013 |
| Continuous-wave operation of (Al, In) GaN distributed-feedback laser diodes with high-order notched gratings TJ Slight, S Stanczyk, S Watson, A Yadav, S Grzanka, E Rafailov, P Perlin, ... Applied Physics Express 11 (11), 112701, 2018 | 39 | 2018 |
| High-optical-power InGaN superluminescent diodes with “j-shape” waveguide A Kafar, S Stanczyk, G Targowski, T Oto, I Makarowa, P Wisniewski, ... Applied Physics Express 6 (9), 092102, 2013 | 39 | 2013 |
| Stack of two III-nitride laser diodes interconnected by a tunnel junction M Siekacz, G Muziol, M Hajdel, M Żak, K Nowakowski-Szkudlarek, ... Optics Express 27 (4), 5784-5791, 2019 | 38 | 2019 |
| Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices F Roccaforte, M Leszczynski John Wiley & Sons, 2020 | 35 | 2020 |
| Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate A Kafar, S Stanczyk, M Sarzynski, S Grzanka, J Goss, G Targowski, ... Optics Express 24 (9), 9673-9682, 2016 | 26 | 2016 |
| Design and optimization of InGaN superluminescent diodes A Kafar, S Stańczyk, P Wiśniewski, T Oto, I Makarowa, G Targowski, ... physica status solidi (a) 212 (5), 997-1004, 2015 | 26 | 2015 |
| review on optimization and current status of (Al, In) GaN superluminescent diodes A Kafar, S Stanczyk, D Schiavon, T Suski, P Perlin ECS Journal of Solid State Science and Technology 9 (1), 015010, 2019 | 21 | 2019 |
| Vertical integration of nitride laser diodes and light emitting diodes by tunnel junctions M Siekacz, G Muziol, H Turski, M Hajdel, M Żak, M Chlipała, M Sawicka, ... Electronics 9 (9), 1481, 2020 | 20 | 2020 |
| Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes P Perlin, T Czyszanowski, L Marona, S Grzanka, A Kafar, S Stanczyk, ... Gallium Nitride Materials and Devices VII 8262, 161-168, 2012 | 20 | 2012 |
| Optical properties of III-nitride laser diodes with wide InGaN quantum wells G Muziol, M Hajdel, M Siekacz, K Szkudlarek, S Stanczyk, H Turski, ... Applied Physics Express 12 (7), 072003, 2019 | 19 | 2019 |
| InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate S Stańczyk, T Czyszanowski, A Kafar, R Czernecki, G Targowski, ... Applied Physics Letters 102 (15), 2013 | 18 | 2013 |
| 450 nm (Al, In) GaN optical amplifier with double ‘j-shape’waveguide for master oscillator power amplifier systems S Stanczyk, A Kafar, S Grzanka, M Sarzynski, R Mroczynski, S Najda, ... Optics Express 26 (6), 7351-7357, 2018 | 16 | 2018 |
| GaN laser diode technology for visible-light communications SP Najda, P Perlin, T Suski, L Marona, M Leszczyński, P Wisniewski, ... Electronics 11 (9), 1430, 2022 | 15 | 2022 |
| InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter A Kafar, S Stanczyk, M Sarzynski, S Grzanka, J Goss, I Makarowa, ... Photonics Research 5 (2), A30-A34, 2017 | 15 | 2017 |
| Nitride LEDs and lasers with buried tunnel junctions H Turski, M Siekacz, G Muzioł, M Hajdel, S Stańczyk, M Żak, M Chlipała, ... ECS Journal of Solid State Science and Technology 9 (1), 015018, 2019 | 14 | 2019 |
| Screening of quantum-confined Stark effect in nitride laser diodes and superluminescent diodes A Kafar, S Stanczyk, S Grzanka, K Pieniak, T Suski, P Perlin Applied Physics Express 12 (4), 044001, 2019 | 13 | 2019 |
| Emission wavelength dependence of characteristic temperature of InGaN laser diodes A Bojarska, J Goss, Ł Marona, A Kafar, S Stańczyk, I Makarowa, S Najda, ... Applied Physics Letters 103 (7), 2013 | 13 | 2013 |
| LJ McKnight Proc SP Najda, P Perlin, T Suski, L Marona, S Stanczyk, M Leszczyński, ... SPIE, 0 | 12 | |
