Giovanni Verzellesi
Giovanni Verzellesi
Professor of Electronics, University of Modena and Reggio Emilia, Italy
確認したメール アドレス: - ホームページ
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ...
IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 10_1, 2013
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni
IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
L Larcher, G Verzellesi, P Pavan, E Lusky, I Bloom, B Eitan
IEEE Transactions on Electron Devices 49 (11), 1939-1946, 2002
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini
IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008
Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays
F Nava, E Vittone, P Vanni, G Verzellesi, PG Fuochi, C Lanzieri, M Glaser
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003
Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors
M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008
Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs
G Verzellesi, L Morassi, G Meneghesso, M Meneghini, E Zanoni, ...
IEEE electron device letters 35 (4), 443-445, 2014
Radiation-hard semiconductor detectors for SuperLHC
M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
Study of breakdown effects in silicon multiguard structures
M Da Rold, N Bacchetta, D Bisello, A Paccagnella, GF Dalla Betta, ...
Nuclear Science, IEEE Transactions on 46 (4), 1215-1223, 1999
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes
M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ...
physica status solidi (a) 212 (5), 947-953, 2015
A review of failure modes and mechanisms of GaN-based HEMTs
E Zanoni, G Meneghesso, G Verzellesi, F Danesin, M Meneghini, ...
2007 IEEE International Electron Devices Meeting, 381-384, 2007
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's
E Zanoni, EF Crabbe, JMC Stork, P Pavan, G Verzellesi, L Vendrame, ...
IEEE electron device letters 14 (2), 69-71, 1993
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector
G Verzellesi, P Vanni, F Nava, C Canali
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2002
Investigation of efficiency-droop mechanisms in multi-quantum-well InGaN/GaN blue light-emitting diodes
D Saguatti, L Bidinelli, G Verzellesi, M Meneghini, G Meneghesso, ...
IEEE transactions on electron devices 59 (5), 1402-1409, 2012
Radiation effects on breakdown characteristics of multiguarded devices
M Da Rold, A Paccagnella, A Da Re, G Verzellesi, N Bacchetta, ...
IEEE Transactions on Nuclear Science 44 (3), 721-727, 1997
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
M Faqir, G Verzellesi, F Fantini, F Danesin, F Rampazzo, G Meneghesso, ...
Microelectronics reliability 47 (9-11), 1639-1642, 2007
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
M Calciati, M Goano, F Bertazzi, M Vallone, X Zhou, G Ghione, ...
AIP Advances 4 (6), 067118, 2014
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)
G Verzellesi, A Mazzanti, AF Basile, A Boni, E Zanoni, C Canali
IEEE Transactions on electron devices 50 (8), 1733-1740, 2003
論文 1–20