Umesh Mishra
Umesh Mishra
確認したメール アドレス: ece.ucsb.edu
タイトル引用先
AlGaN/GaN HEMTs-an overview of device operation and applications
UK Mishra, P Parikh, YF Wu
Proceedings of the IEEE 90 (6), 1022-1031, 2002
15822002
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
R Vetury, NQ Zhang, S Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 560-566, 2001
12972001
GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior, YF Wu
Proceedings of the IEEE 96 (2), 287-305, 2008
11932008
30-W/mm GaN HEMTs by field plate optimization
YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ...
IEEE Electron Device Letters 25 (3), 117-119, 2004
11262004
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
9482000
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ...
Applied Physics Letters 73 (10), 1370-1372, 1998
7021998
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied Physics Letters 71 (18), 2572-2574, 1997
7001997
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810, 2006
665*2006
Very-high power density AlGaN/GaN HEMTs
YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 586-590, 2001
6252001
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ...
Applied Physics Letters 73 (14), 2006-2008, 1998
4881998
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
4701999
AlGaN/AlN/GaN high-power microwave HEMT
L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
4452001
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 143502, 2008
4332008
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron Device Letters 26 (11), 781-783, 2005
4082005
Electrical characterization of GaN junctions with and without threading dislocations
P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ...
Applied physics letters 73 (7), 975-977, 1998
4071998
Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
YF Wu, BP Keller, S Keller, D Kapolnek, P Kozodoy, SP Denbaars, ...
Applied physics letters 69 (10), 1438-1440, 1996
4031996
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
S Heikman, S Keller, SP DenBaars, UK Mishra
Applied Physics Letters 81 (3), 439-441, 2002
3942002
Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
D Kapolnek, XH Wu, B Heying, S Keller, BP Keller, UK Mishra, ...
Applied Physics Letters 67 (11), 1541-1543, 1995
3921995
High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates
Y Dora, A Chakraborty, L McCarthy, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 27 (9), 713-715, 2006
3892006
Anisotropic epitaxial lateral growth in GaN selective area epitaxy
D Kapolnek, S Keller, R Vetury, RD Underwood, P Kozodoy, ...
Applied Physics Letters 71 (9), 1204-1206, 1997
3841997
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