フォロー
T Hibiya
T Hibiya
NEC, Tokyo Metropolitan Inst. Tech., Tokyo Metropolitan U, Keio University
確認したメール アドレス: sdm.keio.ac.jp
タイトル
引用先
引用先
Surface tension measurement of molten silicon by the oscillating drop method using electromagnetic levitation
M Przyborowski, T Hibiya, M Eguchi, I Egry
Journal of Crystal Growth 151 (1-2), 60-65, 1995
1541995
Three-dimensional oscillatory flow in a thin annular pool of silicon melt
YR Li, N Imaishi, T Azami, T Hibiya
Journal of Crystal Growth 260 (1-2), 28-42, 2004
1372004
Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth method
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of crystal growth 88 (3), 365-370, 1988
1231988
Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket
S Nakamura, T Hibiya, K Kakimoto, N Imaishi, S Nishizawa, A Hirata, ...
Journal of Crystal Growth 186 (1-2), 85-94, 1998
1121998
Measurement of the density and the thermal expansion coefficient of molten silicon using electromagnetic levitation
M Langen, T Hibiya, M Eguchi, I Egry
Journal of crystal growth 186 (4), 550-556, 1998
991998
Effect of the oxygen partial pressure on the surface tension of molten silicon and its temperature coefficient
K Mukai, Z Yuan, K Nogi, T Hibiya
Isij International 40 (Suppl), S148-S152, 2000
972000
The role of surface-tension-driven flow in the formation of a surface pattern on a Czochralski silicon melt
T Azami, S Nakamura, M Eguchi, T Hibiya
Journal of crystal growth 233 (1-2), 99-107, 2001
952001
X-ray diffraction study of undercooled molten silicon
H Kimura, M Watanabe, K Izumi, T Hibiya, D Holland-Moritz, T Schenk, ...
Applied Physics Letters 78 (5), 604-606, 2001
922001
Spoke patterns on molten silicon in Czochralski system
KW Yi, K Kakimoto, M Eguchi, M Watanabe, T Shyo, T Hibiya
Journal of crystal growth 144 (1-2), 20-28, 1994
921994
Natural and forced convection of molten silicon during Czochralski single crystal growth
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of crystal growth 94 (2), 412-420, 1989
871989
Thermophysical properties data on molten semiconductors
S Nakamura, T Hibiya
International Journal of Thermophysics 13, 1061-1084, 1992
861992
Influence of oxygen partial pressure on surface tension of molten silver
S Ozawa, K Morohoshi, T Hibiya, H Fukuyama
Journal of Applied Physics 107 (1), 2010
782010
Normal spectral emissivity of undercooled liquid silicon
H Kawamura, H Fukuyama, M Watanabe, T Hibiya
Measurement Science and Technology 16 (2), 386, 2005
742005
Flow instability of molten silicon in the Czochralski configuration
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of crystal growth 102 (1-2), 16-20, 1990
641990
Ordered structure in non-axisymmetric flow of silicon melt convection
K Kakimoto, M Watanabe, M Eguchi, T Hibiya
Journal of crystal growth 126 (2-3), 435-440, 1993
631993
Influence of oxygen partial pressure on surface tension and its temperature coefficient of molten iron
S Ozawa, S Suzuki, T Hibiya, H Fukuyama
Journal of Applied Physics 109 (1), 2011
622011
Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic field
M Watanabe, M Eguchi, T Hibiya
Journal of crystal growth 193 (3), 402-412, 1998
531998
Growth and characterization of Liquid-Phase Epitaxial Bi-Substituted iron garnet films for magneto-optic application
T Hibiya, Y Morishige, J Nakashima
Japanese journal of applied physics 24 (10R), 1316, 1985
531985
In-situ observation of solid-liquid interface shape by X-ray radiography during silicon single crystal growth
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of crystal growth 91 (4), 509-514, 1988
521988
The baroclinic flow instability in rotating silicon melt
M Watanabe, M Eguchi, K Kakimoto, Y Baros, T Hibiya
Journal of crystal growth 128 (1-4), 288-292, 1993
481993
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論文 1–20