| A strong electro-optically active lead-free ferroelectric integrated on silicon S Abel, T Stöferle, C Marchiori, C Rossel, MD Rossell, R Erni, D Caimi, ... Nature communications 4 (1), 1671, 2013 | 357 | 2013 |
| High-K dielectrics for the gate stack JP Locquet, C Marchiori, M Sousa, J Fompeyrine, JW Seo Journal of Applied Physics 100 (5), 2006 | 171 | 2006 |
| A hybrid barium titanate–silicon photonics platform for ultraefficient electro-optic tuning S Abel, T Stöferle, C Marchiori, D Caimi, L Czornomaz, M Stuckelberger, ... Journal of Lightwave Technology 34 (8), 1688-1693, 2016 | 136 | 2016 |
| Inversion mode n-channel GaAs field effect transistor with high-k/metal gate JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ... Applied Physics Letters 92 (15), 2008 | 115 | 2008 |
| Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics KJ Kormondy, Y Popoff, M Sousa, F Eltes, D Caimi, MD Rossell, M Fiebig, ... Nanotechnology 28 (7), 075706, 2017 | 111 | 2017 |
| Field-effect transistors with SrHfO3 as gate oxide C Rossel, B Mereu, C Marchiori, D Caimi, M Sousa, A Guiller, H Siegwart, ... Applied physics letters 89 (5), 2006 | 111 | 2006 |
| Oxygenated amorphous carbon for resistive memory applications CA Santini, A Sebastian, C Marchiori, VP Jonnalagadda, L Dellmann, ... Nature communications 6 (1), 8600, 2015 | 107 | 2015 |
| Towards large size substrates for III-V co-integration made by direct wafer bonding on Si N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ... APL materials 2 (8), 2014 | 91 | 2014 |
| SrHfO3 as gate dielectric for future CMOS technology C Rossel, M Sousa, C Marchiori, J Fompeyrine, D Webb, D Caimi, ... Microelectronic engineering 84 (9-10), 1869-1873, 2007 | 89 | 2007 |
| Interface formation and defect structures in epitaxial thin films on (111) Si JW Seo, J Fompeyrine, A Guiller, G Norga, C Marchiori, H Siegwart, ... Applied Physics Letters 83 (25), 5211-5213, 2003 | 88 | 2003 |
| Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕ SiO2 interlayers SJ Koester, EW Kiewra, Y Sun, DA Neumayer, JA Ott, M Copel, ... Applied physics letters 89 (4), 2006 | 80 | 2006 |
| Optical properties of epitaxial SrHfO3 thin films grown on Si M Sousa, C Rossel, C Marchiori, H Siegwart, D Caimi, JP Locquet, ... Journal of Applied Physics 102 (10), 2007 | 79 | 2007 |
| Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates G Mavrou, P Tsipas, A Sotiropoulos, S Galata, Y Panayiotatos, ... Applied Physics Letters 93 (21), 2008 | 71 | 2008 |
| Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks P Tsipas, SN Volkos, A Sotiropoulos, SF Galata, G Mavrou, D Tsoutsou, ... Applied physics letters 93 (8), 2008 | 71 | 2008 |
| CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs L Czornomaz, M El Kazzi, M Hopstaken, D Caimi, P Mächler, C Rossel, ... Solid-State Electronics 74, 71-76, 2012 | 61 | 2012 |
| Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si S Abel, M Sousa, C Rossel, D Caimi, MD Rossell, R Erni, J Fompeyrine, ... Nanotechnology 24 (28), 285701, 2013 | 60 | 2013 |
| H plasma cleaning and a-Si passivation of GaAs for surface channel device applications C Marchiori, DJ Webb, C Rossel, M Richter, M Sousa, C Gerl, R Germann, ... Journal of Applied Physics 106 (11), 2009 | 55 | 2009 |
| Solid phase epitaxy of SrTiO3 on (Ba, Sr) O∕ Si (100): The relationship between oxygen stoichiometry and interface stability GJ Norga, C Marchiori, C Rossel, A Guiller, JP Locquet, H Siegwart, ... Journal of Applied Physics 99 (8), 2006 | 55 | 2006 |
| Thermal stability of the SrTiO3∕(Ba, Sr) O stacks epitaxially grown on Si C Marchiori, M Sousa, A Guiller, H Siegwart, JP Locquet, J Fompeyrine, ... Applied physics letters 88 (7), 2006 | 55 | 2006 |
| Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si (0 0 1) KJ Kormondy, S Abel, F Fallegger, Y Popoff, P Ponath, AB Posadas, ... Microelectronic Engineering 147, 215-218, 2015 | 54 | 2015 |
