| On the origin of interface states at oxide/III-nitride heterojunction interfaces M Matys, B Adamowicz, A Domanowska, A Michalewicz, R Stoklas, ... Journal of Applied Physics 120 (22), 2016 | 46 | 2016 |
| Mechanism of yellow luminescence in GaN at room temperature M Matys, B Adamowicz Journal of Applied Physics 121 (6), 2017 | 29 | 2017 |
| Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement M Matys, B Adamowicz, T Hashizume Applied Physics Letters 101 (23), 2012 | 27 | 2012 |
| Mg-implanted bevel edge termination structure for GaN power device applications M Matys, T Ishida, KP Nam, H Sakurai, T Narita, T Uesugi, M Bockowski, ... Applied Physics Letters 118 (9), 2021 | 26 | 2021 |
| Design and demonstration of nearly-ideal edge termination for GaN pn junction using Mg-implanted field limiting rings M Matys, T Ishida, KP Nam, H Sakurai, K Kataoka, T Narita, T Uesugi, ... Applied Physics Express 14 (7), 074002, 2021 | 24 | 2021 |
| Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition M Matys, R Stoklas, M Blaho, B Adamowicz Applied physics letters 110 (24), 2017 | 23 | 2017 |
| Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures M Matys, R Stoklas, J Kuzmik, B Adamowicz, Z Yatabe, T Hashizume Journal of Applied Physics 119 (20), 2016 | 20 | 2016 |
| Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and … R Stoklas, D Gregušová, M Blaho, K Fröhlich, J Novák, M Matys, Z Yatabe, ... Semiconductor Science and Technology 32 (4), 045018, 2017 | 19 | 2017 |
| Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors M Matys, S Kaneki, K Nishiguchi, B Adamowicz, T Hashizume Journal of Applied Physics 122 (22), 2017 | 18 | 2017 |
| Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method M Matys, B Adamowicz, Y Hori, T Hashizume Applied Physics Letters 103 (2), 2013 | 17 | 2013 |
| Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment T Ishida, KP Nam, M Matys, T Uesugi, J Suda, T Kachi Applied Physics Express 13 (12), 124003, 2020 | 16 | 2020 |
| Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures A Domanowska, M Miczek, R Ucka, M Matys, B Adamowicz, J Żywicki, ... Applied surface science 258 (21), 8354-8359, 2012 | 15 | 2012 |
| Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing T Kachi, T Narita, H Sakurai, M Matys, K Kataoka, K Hirukawa, K Sumida, ... Journal of Applied Physics 132 (13), 2022 | 14 | 2022 |
| Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage M Matys, K Kitagawa, T Narita, T Uesugi, J Suda, T Kachi Applied Physics Letters 121 (20), 2022 | 10 | 2022 |
| Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors M Matys, K Nishiguchi, B Adamowicz, J Kuzmik, T Hashizume Journal of Applied Physics 124 (22), 2018 | 8 | 2018 |
| Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer A Baratov, S Kawabata, S Urano, I Nagase, M Ishiguro, S Maeda, ... Applied Physics Express 15 (10), 104002, 2022 | 7 | 2022 |
| The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN M Matys, M Miczek, B Adamowicz, Z Żytkiewicz, E Kamińska, ... Acta Physica Polonica A 120 (6A), 2011 | 7 | 2011 |
| High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films M Matys, B Adamowicz, ZR Zytkiewicz, A Taube, R Kruszka, A Piotrowska Applied physics letters 109 (5), 2016 | 6 | 2016 |
| Two-dimensional modeling of surface photovoltage in metal/insulator/n-GaN structure with cylindrical symmetry M Matys, P Powroznik, D Kupka, B Adamowicz Optica Applicata 43 (1), 2013 | 2 | 2013 |
| All-optical transistor using deep-level defects in nitride semiconductors for room temperature optical computing M Matys, A Domanowska, A Michalewicz, B Adamowicz, T Kachi AIP Advances 10 (10), 2020 | 1 | 2020 |
Boguslawa AdamowiczSilesian University of Technology確認したメール アドレス: polsl.pl
