| W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 92 | 2020 |
| High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (5), 681-684, 2020 | 65 | 2020 |
| 6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ... IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021 | 45 | 2021 |
| N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ... IEEE Electron Device Letters 41 (11), 1633-1636, 2020 | 40 | 2020 |
| First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE SS Pasayat, E Ahmadi, B Romanczyk, O Koksaldi, A Agarwal, M Guidry, ... Semiconductor Science and Technology 34 (4), 045009, 2019 | 22 | 2019 |
| Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN C Lund, M Catalano, L Wang, C Wurm, T Mates, M Kim, S Nakamura, ... Journal of Applied Physics 123 (5), 2018 | 19 | 2018 |
| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 18 | 2023 |
| GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current A Raj, A Krishna, N Hatui, B Romanczyk, C Wurm, M Guidry, R Hamwey, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2021 | 15 | 2021 |
| Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy C Wurm, E Ahmadi, F Wu, N Hatui, S Keller, J Speck, U Mishra Solid State Communications 305, 113763, 2020 | 13 | 2020 |
| Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... Journal of Applied Physics 131 (1), 2022 | 12 | 2022 |
| Electronic metamaterials with tunable second-order optical nonlinearities HH Lin, F Vallini, MH Yang, R Sharma, MW Puckett, S Montoya, CD Wurm, ... Scientific Reports 7 (1), 9983, 2017 | 10 | 2017 |
| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters, 2023 | 9 | 2023 |
| Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ... 2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022 | 8 | 2022 |
| A novel concept using derivative superposition at the device-level to reduce linearity sensitivity to bias in N-polar GaN MISHEMT P Shrestha, M Guidry, B Romanczyk, RR Karnaty, N Hatui, C Wurm, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 8 | 2020 |
| Improved N-polar GaN mm-wave linearity, efficiency, and noise M Guidry, P Shrestha, W Liu, B Romanczyk, N Hatui, C Wurm, R Karnaty, ... 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 291-294, 2022 | 7 | 2022 |
| Synthesis of second-order nonlinearities in dielectric-semiconductor-dielectric metamaterials HH Lin, MH Yang, R Sharma, MW Puckett, S Montoya, CD Wurm, F Vallini, ... Applied Physics Letters 110 (11), 2017 | 7 | 2017 |
| Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy K Khan, K Sun, C Wurm, K Datta, PB Deotare, E Ahmadi Physical Review Materials 5 (12), 124606, 2021 | 6 | 2021 |
| Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy K Khan, S Diez, K Sun, C Wurm, UK Mishra, E Ahmadi APL Materials 9 (12), 2021 | 5 | 2021 |
| Virtual-source modeling of N-polar GaN MISHEMTS RR Karnaty, M Guidry, P Shrestha, B Romanczyk, N Hatui, X Zheng, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 5 | 2019 |
| Enhanced effective second-order nonlinearities in Si-rich SiNx thin films HH Lin, R Sharma, MH Yang, MW Puckett, CD Wurm, F Vallini, Y Fainman CLEO: Science and Innovations, SM1M. 6, 2017 | 5 | 2017 |
