フォロー
Yijin Zhang
Yijin Zhang
Institute of Industrial Science, The University of Tokyo
確認したメール アドレス: iis.u-tokyo.ac.jp
タイトル
引用先
引用先
Superconducting dome in a gate-tuned band insulator
JT Ye, YJ Zhang, R Akashi, MS Bahramy, R Arita, Y Iwasa
Science 338 (6111), 1193-1196, 2012
11972012
Ambipolar MoS2 Thin Flake Transistors
Y Zhang, J Ye, Y Matsuhashi, Y Iwasa
Nano letters 12 (3), 1136-1140, 2012
9542012
Electrically switchable chiral light-emitting transistor
YJ Zhang, T Oka, R Suzuki, JT Ye, Y Iwasa
Science 344 (6185), 725-728, 2014
8062014
Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry
R Suzuki, M Sakano, YJ Zhang, R Akashi, D Morikawa, A Harasawa, ...
Nature nanotechnology 9 (8), 611-617, 2014
4842014
Superconductivity series in transition metal dichalcogenides by ionic gating
W Shi, J Ye, Y Zhang, R Suzuki, M Yoshida, J Miyazaki, N Inoue, Y Saito, ...
Scientific reports 5 (1), 12534, 2015
3122015
Memristive phase switching in two-dimensional 1T-TaS2 crystals
M Yoshida, R Suzuki, Y Zhang, M Nakano, Y Iwasa
Science advances 1 (9), e1500606, 2015
2832015
Memristive phase switching in two-dimensional 1T-TaS2 crystals
M Yoshida, R Suzuki, Y Zhang, M Nakano, Y Iwasa
Science advances 1 (9), e1500606, 2015
2832015
Formation of a Stable pn Junction in a Liquid-Gated MoS2 Ambipolar Transistor
YJ Zhang, JT Ye, Y Yomogida, T Takenobu, Y Iwasa
Nano letters 13 (7), 3023-3028, 2013
2572013
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes
YJ Zhang, T Ideue, M Onga, F Qin, R Suzuki, A Zak, R Tenne, JH Smet, ...
Nature 570 (7761), 349, 2019
2422019
Exciton Hall effect in monolayer MoS2
M Onga, Y Zhang, T Ideue, Y Iwasa
Nature materials 16 (12), 1193-1197, 2017
1892017
Controlling charge-density-wave states in nano-thick crystals of 1T-TaS2
M Yoshida, Y Zhang, J Ye, R Suzuki, Y Imai, S Kimura, A Fujiwara, ...
Scientific reports 4 (1), 7302, 2014
1822014
Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals
M Yoshida, T Iizuka, Y Saito, M Onga, R Suzuki, Y Zhang, Y Iwasa, ...
Nano letters 16 (3), 2061-2065, 2016
1602016
Superconductivity in Pristine at Ultrahigh Pressure
Z Chi, X Chen, F Yen, F Peng, Y Zhou, J Zhu, Y Zhang, X Liu, C Lin, ...
Physical review letters 120 (3), 037002, 2018
1222018
Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics
J Pu, Y Zhang, Y Wada, J Tse-Wei Wang, LJ Li, Y Iwasa, T Takenobu
Applied Physics Letters 103 (2), 2013
1182013
High circular polarization in electroluminescence from MoSe2
M Onga, Y Zhang, R Suzuki, Y Iwasa
Applied Physics Letters 108 (7), 2016
442016
Optoelectronic response of a WS2 tubular pn junction
YJ Zhang, M Onga, F Qin, W Shi, A Zak, R Tenne, J Smet, Y Iwasa
2D Materials 5 (3), 035002, 2018
432018
2D crystals of transition metal dichalcogenide and their iontronic functionalities
YJ Zhang, M Yoshida, R Suzuki, Y Iwasa
2D Materials 2 (4), 044004, 2015
412015
Extended polymorphism of two-dimensional material
M Yoshida, J Ye, Y Zhang, Y Imai, S Kimura, A Fujiwara, T Nishizaki, ...
Nano Letters 17 (9), 5567-5571, 2017
332017
Potential profile of stabilized field-induced lateral p–n junction in transition-metal dichalcogenides
Y Zhang, R Suzuki, Y Iwasa
ACS nano 11 (12), 12583-12590, 2017
302017
Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction
K Takeyama, R Moriya, S Okazaki, Y Zhang, S Masubuchi, K Watanabe, ...
Nano Letters 21 (9), 3929-3934, 2021
192021
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論文 1–20