Superconducting dome in a gate-tuned band insulator JT Ye, YJ Zhang, R Akashi, MS Bahramy, R Arita, Y Iwasa Science 338 (6111), 1193-1196, 2012 | 1223 | 2012 |
Ambipolar MoS2 Thin Flake Transistors Y Zhang, J Ye, Y Matsuhashi, Y Iwasa Nano letters 12 (3), 1136-1140, 2012 | 987 | 2012 |
Electrically switchable chiral light-emitting transistor YJ Zhang, T Oka, R Suzuki, JT Ye, Y Iwasa Science 344 (6185), 725-728, 2014 | 832 | 2014 |
Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry R Suzuki, M Sakano, YJ Zhang, R Akashi, D Morikawa, A Harasawa, ... Nature nanotechnology 9 (8), 611-617, 2014 | 502 | 2014 |
Superconductivity series in transition metal dichalcogenides by ionic gating W Shi, J Ye, Y Zhang, R Suzuki, M Yoshida, J Miyazaki, N Inoue, Y Saito, ... Scientific reports 5 (1), 12534, 2015 | 317 | 2015 |
Memristive phase switching in two-dimensional 1T-TaS2 crystals M Yoshida, R Suzuki, Y Zhang, M Nakano, Y Iwasa Science advances 1 (9), e1500606, 2015 | 302 | 2015 |
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes YJ Zhang, T Ideue, M Onga, F Qin, R Suzuki, A Zak, R Tenne, JH Smet, ... Nature 570 (7761), 349, 2019 | 289 | 2019 |
Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor YJ Zhang, JT Ye, Y Yomogida, T Takenobu, Y Iwasa Nano letters 13 (7), 3023-3028, 2013 | 257 | 2013 |
Controlling charge-density-wave states in nano-thick crystals of 1T-TaS2 M Yoshida, Y Zhang, J Ye, R Suzuki, Y Imai, S Kimura, A Fujiwara, ... Scientific reports 4 (1), 7302, 2014 | 202 | 2014 |
Exciton Hall effect in monolayer MoS2 M Onga, Y Zhang, T Ideue, Y Iwasa Nature materials 16 (12), 1193-1197, 2017 | 200 | 2017 |
Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals M Yoshida, T Iizuka, Y Saito, M Onga, R Suzuki, Y Zhang, Y Iwasa, ... Nano letters 16 (3), 2061-2065, 2016 | 166 | 2016 |
Superconductivity in Pristine at Ultrahigh Pressure Z Chi, X Chen, F Yen, F Peng, Y Zhou, J Zhu, Y Zhang, X Liu, C Lin, ... Physical review letters 120 (3), 037002, 2018 | 136 | 2018 |
Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics J Pu, Y Zhang, Y Wada, J Tse-Wei Wang, LJ Li, Y Iwasa, T Takenobu Applied Physics Letters 103 (2), 2013 | 119 | 2013 |
Optoelectronic response of a WS2 tubular pn junction YJ Zhang, M Onga, F Qin, W Shi, A Zak, R Tenne, J Smet, Y Iwasa 2D Materials 5 (3), 035002, 2018 | 47 | 2018 |
High circular polarization in electroluminescence from MoSe2 M Onga, Y Zhang, R Suzuki, Y Iwasa Applied Physics Letters 108 (7), 2016 | 45 | 2016 |
2D crystals of transition metal dichalcogenide and their iontronic functionalities YJ Zhang, M Yoshida, R Suzuki, Y Iwasa 2D Materials 2 (4), 044004, 2015 | 44 | 2015 |
Extended polymorphism of two-dimensional material M Yoshida, J Ye, Y Zhang, Y Imai, S Kimura, A Fujiwara, T Nishizaki, ... Nano Letters 17 (9), 5567-5571, 2017 | 35 | 2017 |
Potential profile of stabilized field-induced lateral p–n junction in transition-metal dichalcogenides Y Zhang, R Suzuki, Y Iwasa ACS nano 11 (12), 12583-12590, 2017 | 31 | 2017 |
Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction K Takeyama, R Moriya, S Okazaki, Y Zhang, S Masubuchi, K Watanabe, ... Nano Letters 21 (9), 3929-3934, 2021 | 25 | 2021 |
Robustly protected carrier spin relaxation in electrostatically doped transition-metal dichalcogenides YJ Zhang, W Shi, JT Ye, R Suzuki, Y Iwasa Physical Review B 95 (20), 205302, 2017 | 18 | 2017 |