David Moran
David Moran
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Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm
RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ...
IEEE Electron Device Letters 28 (12), 1080-1082, 2007
Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
SAO Russell, L Cao, D Qi, A Tallaire, KG Crawford, ATS Wee, DAJ Moran
Applied Physics Letters 103 (20), 2013
High mobility III-V MOSFETs for RF and digital applications
M Passlack, P Zurcher, K Rajagopalan, R Droopad, J Abrokwah, M Tutt, ...
2007 IEEE International Electron Devices Meeting, 621-624, 2007
Surface transfer doping of diamond: A review
KG Crawford, I Maini, DA Macdonald, DAJ Moran
Progress in Surface Science 96 (1), 100613, 2021
Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz
SAO Russell, S Sharabi, A Tallaire, DAJ Moran
IEEE Electron Device Letters 33 (10), 1471-1473, 2012
Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability
KG Crawford, L Cao, D Qi, A Tallaire, E Limiti, C Verona, ATS Wee, ...
Applied Physics Letters 108 (4), 2016
50-nm T-gate metamorphic GaAs HEMTs with f/sub T/of 440 GHz and noise figure of 0.7 dB at 26 GHz
K Elgaid, H McLelland, M Holland, DAJ Moran, CR Stanley, IG Thayne
IEEE Electron Device Letters 26 (11), 784-786, 2005
Thermally stable, high performance transfer doping of diamond using transition metal oxides
KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ...
Scientific Reports 8 (1), 3342, 2018
RF operation of hydrogen-terminated diamond field effect transistors: A comparative study
S Russell, S Sharabi, A Tallaire, DAJ Moran
IEEE Transactions on Electron Devices 62 (3), 751-756, 2015
Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions
DAJ Moran, OJL Fox, H McLelland, S Russell, PW May
IEEE electron device letters 32 (5), 599-601, 2011
The direct hydrothermal deposition of cobalt-doped MoS 2 onto fluorine-doped SnO 2 substrates for catalysis of the electrochemical hydrogen evolution reaction
I Roger, R Moca, HN Miras, KG Crawford, DAJ Moran, AY Ganin, ...
Journal of materials chemistry A 5 (4), 1472-1480, 2017
1 µm gate length, In0. 75Ga0. 25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm
RJW Hill, R Droopad, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, ...
Electronics Letters 44 (7), 498-500, 2008
50-nm self-aligned and “standard” T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node
DAJ Moran, H McLelland, K Elgaid, G Whyte, CR Stanley, I Thayne
IEEE Transactions on Electron Devices 53 (12), 2920-2925, 2006
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack
Y Chen, DS Macintyre, X Cao, E Boyd, D Moran, H McLelland, M Holland, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography
Y Chen, D Macintyre, E Boyd, D Moran, I Thayne, S Thoms
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
Selective phase growth and precise-layer control in MoTe2
JP Fraser, L Masaityte, J Zhang, S Laing, JC Moreno-López, AF McKenzie, ...
Communications Materials 1 (1), 48, 2020
Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices
GW Paterson, JA Wilson, D Moran, R Hill, AR Long, I Thayne, M Passlack, ...
Materials Science and Engineering: B 135 (3), 277-281, 2006
Self-aligned 0.12/spl mu/m T-gate In/sub. 53/Ga/sub. 47/As/In/sub. 52/Al/sub. 48/As HEMT technology utilising a non-annealed ohmic contact strategy
DAJ Moran, K Kalna, E Boyd, F McEwan, H McLelland, LL Zhuang, ...
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
High resolution structural characterisation of laser-induced defect clusters inside diamond
PS Salter, MJ Booth, A Courvoisier, DAJ Moran, DA MacLaren
Applied Physics Letters 111 (8), 2017
Monte Carlo Simulations of High-Performance Implant Free InGaAs Nano-MOSFETs for Low-Power CMOS Applications
K Kalna, JA Wilson, DAJ Moran, RJW Hill, AR Long, R Droopad, ...
IEEE transactions on nanotechnology 6 (1), 106-112, 2007
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