Rajesh Sathiyanarayanan
Rajesh Sathiyanarayanan
確認したメール アドレス: amat.com
タイトル引用先
Role of solvent in the shape-controlled synthesis of anisotropic colloidal nanostructures
R Sathiyanarayanan, M Alimohammadi, Y Zhou, KA Fichthorn
The Journal of Physical Chemistry C 115 (39), 18983-18990, 2011
272011
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
T Yamashita, S Mehta, VS Basker, R Southwick, A Kumar, ...
2015 Symposium on VLSI Technology (VLSI Technology), T154-T155, 2015
162015
Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices
RK Pandey, R Sathiyanarayanan, U Kwon, V Narayanan, K Murali
Journal of Applied Physics 114 (3), 034505, 2013
152013
Role of codeposited impurities during growth. II. Dependence of morphology on binding and barrier energies
R Sathiyanarayanan, ABH Hamouda, A Pimpinelli, TL Einstein
Physical Review B 83 (3), 035424, 2011
152011
Role of codeposited impurities during growth. I. Explaining distinctive experimental morphology on Cu (0 0 1)
ABH Hamouda, R Sathiyanarayanan, A Pimpinelli, TL Einstein
Physical Review B 83 (3), 035423, 2011
132011
Ab-initio calculations of interactions between Cu adatoms on Cu (1 1 0): Sensitivity of strong multi-site interactions to adatom relaxations
R Sathiyanarayanan, TL Einstein
Surface Science 603 (16), 2387-2392, 2009
132009
Terrace-width distributions of touching steps: Modification of the fermion analogy with implications for measuring step-step interactions
R Sathiyanarayanan, ABH Hamouda, TL Einstein
Physical Review B 80 (15), 153415, 2009
92009
Sensitivity of short-range trio interactions to lateral relaxation of adatoms: Challenges for detailed lattice-gas modeling
R Sathiyanarayanan, TJ Stasevich, TL Einstein
Surface Science 602 (6), 1243-1249, 2008
92008
Stable work function for narrow-pitch devices
T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan
US Patent 9,735,250, 2017
72017
Multisite interactions in lattice-gas models
TL Einstein, R Sathiyanarayanan
Nanophenomena at Surfaces, 19-37, 2011
62011
Workfunction modulation-based sensor to measure pressure and temperature
B Jayaraman, KVRM Murali, EJ Nowak, ND Sathaye, ...
US Patent 9,170,165, 2015
52015
Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study
K Ulman, R Sathiyanarayanan, RK Pandey, K Murali, S Narasimhan
Journal of Applied Physics 113 (23), 234102, 2013
42013
Stable work function for narrow-pitch devices
T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan
US Patent 9,583,486, 2017
32017
Data processing
M Bell, IIRA Hamilton, ND Sathaye, R Sathiyanarayanan
US Patent 9,549,044, 2017
32017
Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics
RG Southwick, R Sathiyanarayanan, M Bajaj, S Mehta, T Yamashita, ...
2014 IEEE International Reliability Physics Symposium, BD. 2.1-BD. 2.4, 2014
32014
Stable work function for narrow-pitch devices
T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan
US Patent App. 15/813,634, 2018
22018
Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer
T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan
US Patent 9,627,484, 2017
22017
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor …
S Siddiqui, M Dai, R Loesing, E Kaltalioglu, R Pandey, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
22017
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
T Ando, T Yamashita, S Fan, I Ok, R Sathiyanarayanan, R Pandey, ...
2015 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2015
22015
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan
US Patent 10,319,596, 2019
12019
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