| Method for vapor deposition of a metal compound film K Endo, M Saitoh US Patent 6,846,743, 2005 | 546 | 2005 |
| Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics K Endo, T Tatsumi Journal of Applied Physics 78 (2), 1370-1372, 1995 | 246 | 1995 |
| Grain-orientation induced work function variation in nanoscale metal-gate transistors—Part I: Modeling, analysis, and experimental validation HF Dadgour, K Endo, VK De, K Banerjee IEEE Transactions on Electron Devices 57 (10), 2504-2514, 2010 | 216 | 2010 |
| Plasma deposition of low-dielectric-constant fluorinated amorphous carbon K Endo, K Shinoda, T Tatsumi Journal of applied physics 86 (5), 2739-2745, 1999 | 188 | 1999 |
| Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics K Endo, T Tatsumi Applied physics letters 68 (20), 2864-2866, 1996 | 162 | 1996 |
| Comprehensive analysis of variability sources of FinFET characteristics T Matsukawa, S O'uchi, K Endo, Y Ishikawa, H Yamauchi, YX Liu, ... 2009 Symposium on VLSI Technology, 118-119, 2009 | 155 | 2009 |
| Demonstration, analysis, and device design considerations for independent DG MOSFETs M Masahara, Y Liu, K Sakamoto, K Endo, T Matsukawa, K Ishii, ... IEEE Transactions on Electron Devices 52 (9), 2046-2053, 2005 | 153 | 2005 |
| Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability H Dadgour, K Endo, V De, K Banerjee 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 132 | 2008 |
| Investigation of the TiN gate electrode with tunable work function and its application for FinFET fabrication Y Liu, S Kijima, E Sugimata, M Masahara, K Endo, T Matsukawa, K Ishii, ... IEEE transactions on nanotechnology 5 (6), 723-730, 2006 | 128 | 2006 |
| Thin film forming method and a semiconductor device manufacturing method K Endo US Patent App. 10/401,970, 2003 | 125 | 2003 |
| Grain-orientation induced work function variation in nanoscale metal-gate transistors—Part II: Implications for process, device, and circuit design HF Dadgour, K Endo, VK De, K Banerjee IEEE Transactions on Electron Devices 57 (10), 2515-2525, 2010 | 107 | 2010 |
| Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses Y Liu, T Matsukawa, K Endo, M Masahara, K Ishii, H Yamauchi, J Tsukada, ... IEEE Electron Device Letters 28 (6), 517-519, 2007 | 79 | 2007 |
| Fluorinated amorphous carbon as a low-dielectric-constant interlayer dielectric K Endo MRS Bulletin 22 (10), 55-58, 1997 | 77 | 1997 |
| Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation K Endo, T Tatsumi Japanese Journal of Applied Physics 42 (6B), L685, 2003 | 73 | 2003 |
| Variability analysis of TiN metal-gate FinFETs K Endo, Y Ishikawa, Y Liu, T Matsukawa, K Sakamoto, J Tsukada, ... IEEE Electron Device Letters 31 (6), 546-548, 2010 | 72 | 2010 |
| Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability C Xu, SK Kolluri, K Endo, K Banerjee IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2013 | 71 | 2013 |
| Performance enhancement of tunnel field-effect transistors by synthetic electric field effect Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ... IEEE electron device letters 35 (7), 792-794, 2014 | 65 | 2014 |
| Suppressing Vtand Gmvariability of FinFETs using amorphous metal gates for 14 nm and beyond T Matsukawa, Y Liu, W Mizubayashi, J Tsukada, H Yamauchi, K Endo, ... 2012 International Electron Devices Meeting, 8.2. 1-8.2. 4, 2012 | 64 | 2012 |
| Semiconductor device and manufacturing method of the same Y Matsumoto, Y Ohnishi, K Endo, T Tatsumi US Patent 5,866,920, 1999 | 56 | 1999 |
| Nitrogen doped fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics K Endo, T Tatsumi Applied physics letters 68 (25), 3656-3658, 1996 | 54 | 1996 |
