Kazuhiko Endo
Kazuhiko Endo
確認したメール アドレス: aist.go.jp - ホームページ
タイトル
引用先
引用先
Method for vapor deposition of a metal compound film
K Endo, M Saitoh
US Patent 6,846,743, 2005
2572005
Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
K Endo, T Tatsumi
Journal of applied physics 78 (2), 1370-1372, 1995
2331995
Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
K Endo, K Shinoda, T Tatsumi
Journal of applied physics 86 (5), 2739-2745, 1999
1711999
Grain-orientation induced work function variation in nanoscale metal-gate transistors—Part I: Modeling, analysis, and experimental validation
HF Dadgour, K Endo, VK De, K Banerjee
IEEE Transactions on Electron Devices 57 (10), 2504-2514, 2010
1572010
Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
K Endo, T Tatsumi
Applied physics letters 68 (20), 2864-2866, 1996
1481996
Comprehensive analysis of variability sources of FinFET characteristics
T Matsukawa, S O'uchi, K Endo, Y Ishikawa, H Yamauchi, YX Liu, ...
2009 Symposium on VLSI Technology, 118-119, 2009
1422009
Demonstration, analysis, and device design considerations for independent DG MOSFETs
M Masahara, Y Liu, K Sakamoto, K Endo, T Matsukawa, K Ishii, ...
IEEE transactions on electron devices 52 (9), 2046-2053, 2005
1382005
Thin film forming method and a semiconductor device manufacturing method
K Endo
US Patent App. 10/401,970, 2003
1252003
Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability
H Dadgour, K Endo, V De, K Banerjee
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1202008
Investigation of the TiN gate electrode with tunable work function and its application for FinFET fabrication
Y Liu, S Kijima, E Sugimata, M Masahara, K Endo, T Matsukawa, K Ishii, ...
IEEE transactions on nanotechnology 5 (6), 723-730, 2006
1012006
Fluorinated amorphous carbon as a low-dielectric-constant interlayer dielectric
K Endo
MRS Bulletin 22 (10), 55-58, 1997
921997
Grain-orientation induced work function variation in nanoscale metal-gate transistors—Part II: Implications for process, device, and circuit design
HF Dadgour, K Endo, VK De, K Banerjee
IEEE transactions on electron devices 57 (10), 2515-2525, 2010
822010
Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation
K Endo, T Tatsumi
Japanese Journal of Applied Physics 42 (6B), L685, 2003
702003
Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses
Y Liu, T Matsukawa, K Endo, M Masahara, K Ishii, H Yamauchi, J Tsukada, ...
IEEE Electron Device Letters 28 (6), 517-519, 2007
672007
Variability analysis of TiN metal-gate FinFETs
K Endo, Y Ishikawa, Y Liu, T Matsukawa, K Sakamoto, J Tsukada, ...
IEEE Electron Device Letters 31 (6), 546-548, 2010
602010
Suppressing Vtand Gmvariability of FinFETs using amorphous metal gates for 14 nm and beyond
T Matsukawa, Y Liu, W Mizubayashi, J Tsukada, H Yamauchi, K Endo, ...
2012 International Electron Devices Meeting, 8.2. 1-8.2. 4, 2012
592012
Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry
H Deng, K Hosoya, Y Imanishi, K Endo, K Yamamura
Electrochemistry Communications 52, 5-8, 2015
572015
Semiconductor device and manufacturing method of the same
Y Matsumoto, Y Ohnishi, K Endo, T Tatsumi
US Patent 5,866,920, 1999
551999
Method of fabricating a semiconductor device with amorphous carbon layer
K Endo
US Patent 6,033,979, 2000
502000
Performance enhancement of tunnel field-effect transistors by synthetic electric field effect
Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ...
IEEE electron device letters 35 (7), 792-794, 2014
482014
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