Ilija Dukovski
Ilija Dukovski
確認したメール アドレス: bu.edu
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引用先
引用先
Metabolic resource allocation in individual microbes determines ecosystem interactions and spatial dynamics
WR Harcombe, WJ Riehl, I Dukovski, BR Granger, A Betts, AH Lang, ...
Cell reports 7 (4), 1104-1115, 2014
3452014
Langevin dynamics simulations of early stage shish-kebab crystallization of polymers in extensional flow
I Dukovski, M Muthukumar
The Journal of chemical physics 118 (14), 6648-6655, 2003
2192003
Method for making semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,830,964, 2004
108*2004
Method for making semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,833,294, 2004
762004
Semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,958,486, 2005
732005
Semiconductor device including MOSFET having band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,897,472, 2005
712005
Semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,891,188, 2005
712005
Method for making an electronic device including a poled superlattice having a net electrical dipole moment
S Halilov, X Huang, I Dukovski, JACSF Yiptong, RJ Mears, M Hytha, ...
US Patent 7,517,702, 2009
702009
Method for making a semiconductor device comprising a superlattice dielectric interface layer
RJ Mears, M Hytha, SA Kreps, RJ Stephenson, JACSF Yiptong, ...
US Patent 7,446,002, 2008
702008
Multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 8,389,974, 2013
692013
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 7,435,988, 2008
682008
Spintronic devices with constrained spintronic dopant
X Huang, S Halilov, JA Yiptong, I Dukovski, M Hytha, R Mears
US Patent App. 11/687,422, 2008
682008
Multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 7,880,161, 2011
662011
Semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,952,018, 2005
662005
Methods of making spintronic devices with constrained spintronic dopant
X Huang, S Halilov, JACSF Yiptong, I Dukovski, M Hytha, RJ Mears
US Patent 7,625,767, 2009
652009
Method for making a multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 7,863,066, 2011
642011
Semiconductor device including MOSFET having band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 7,303,948, 2007
642007
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 7,265,002, 2007
632007
Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 7,034,329, 2006
632006
Semiconductor device comprising a lattice matching layer
I Dukovski, RJ Stephenson, JACSF Yiptong, S Halilov, RJ Mears, ...
US Patent 7,718,996, 2010
622010
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