| Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering JW Shon, J Ohta, K Ueno, A Kobayashi, H Fujioka Scientific Reports 4 (1), 5325, 2014 | 155 | 2014 |
| Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates A Kobayashi, S Kawano, Y Kawaguchi, J Ohta, H Fujioka Applied physics letters 90 (4), 2007 | 107 | 2007 |
| Room-temperature epitaxial growth of AlN films J Ohta, H Fujioka, S Ito, M Oshima Applied physics letters 81 (13), 2373-2375, 2002 | 104 | 2002 |
| Room temperature layer by layer growth of GaN on atomically flat ZnO A Kobayashi, H Fujioka, J Ohta, M Oshima Japanese journal of applied physics 43 (1A), L53, 2003 | 100 | 2003 |
| Low temperature epitaxial growth of In0. 25Ga0. 75N on lattice-matched ZnO by pulsed laser deposition A Kobayashi, J Ohta, H Fujioka Journal of applied physics 99 (12), 2006 | 90 | 2006 |
| Experimental and theoretical investigation on the structural properties of GaN grown on sapphire J Ohta, H Fujioka, M Oshima, K Fujiwara, A Ishii Applied physics letters 83 (15), 3075-3077, 2003 | 82 | 2003 |
| Polarity control of GaN grown on ZnO (0001¯) surfaces A Kobayashi, Y Kawaguchi, J Ohta, H Fujioka, K Fujiwara, A Ishii Applied physics letters 88 (18), 2006 | 80 | 2006 |
| High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering Y Arakawa, K Ueno, A Kobayashi, J Ohta, H Fujioka APL Materials 4 (8), 2016 | 78 | 2016 |
| Electrical properties of Si-doped GaN prepared using pulsed sputtering Y Arakawa, K Ueno, H Imabeppu, A Kobayashi, J Ohta, H Fujioka Applied Physics Letters 110 (4), 2017 | 76 | 2017 |
| Room-temperature epitaxial growth of high quality AlN on SiC by pulsed sputtering deposition K Sato, J Ohta, S Inoue, A Kobayashi, H Fujioka Applied physics express 2 (1), 011003, 2009 | 76 | 2009 |
| Room-temperature epitaxial growth of GaN on conductive substrates J Ohta, H Fujioka, M Oshima Applied physics letters 83 (15), 3060-3062, 2003 | 70 | 2003 |
| Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition Y Kawaguchi, J Ohta, A Kobayashi, H Fujioka Applied Physics Letters 87 (22), 2005 | 67 | 2005 |
| Epitaxial growth of AlN on (La, Sr)(Al, Ta) O3 substrate by laser MBE J Ohta, H Fujioka, M Sumiya, H Koinuma, M Oshima Journal of crystal growth 225 (1), 73-78, 2001 | 66 | 2001 |
| Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique E Nakamura, K Ueno, J Ohta, H Fujioka, M Oshima Applied Physics Letters 104 (5), 2014 | 61 | 2014 |
| Field-effect transistors based on cubic indium nitride M Oseki, K Okubo, A Kobayashi, J Ohta, H Fujioka Scientific reports 4 (1), 3951, 2014 | 54 | 2014 |
| RHEED and XPS study of GaN on Si (1 1 1) grown by pulsed laser deposition J Ohta, H Fujioka, H Takahashi, M Sumiya, M Oshima Journal of crystal growth 233 (4), 779-784, 2001 | 52 | 2001 |
| Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature MH Kim, M Oshima, H Kinoshita, Y Shirakura, K Miyamura, J Ohta, ... Applied physics letters 89 (3), 2006 | 48 | 2006 |
| Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering K Ueno, T Fudetani, Y Arakawa, A Kobayashi, J Ohta, H Fujioka APL Materials 5 (12), 2017 | 44 | 2017 |
| Growth of GaN on NdGaO3 substrates by pulsed laser deposition H Takahashi, J Ohta, H Fujioka, M Oshima Thin Solid Films 407 (1-2), 114-117, 2002 | 41 | 2002 |
| Epitaxial growth of semiconductors on SrTiO3 substrates H Fujioka, J Ohta, H Katada, T Ikeda, Y Noguchi, M Oshima Journal of crystal growth 229 (1-4), 137-141, 2001 | 41 | 2001 |
