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Saurabh Chopra
Saurabh Chopra
在 amat.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Selective gas detection using a carbon nanotube sensor
S Chopra, K McGuire, N Gothard, AM Rao, A Pham
Applied Physics Letters 83 (11), 2280-2282, 2003
4782003
Selective formation of silicon carbon epitaxial layer
Z Ye, S Chopra, A Lam, Y Kim
US Patent 7,776,698, 2010
4302010
Phosphorus containing Si epitaxial layers in N-type source/drain junctions
S Chopra, Z Ye, Y Kim
US Patent 7,960,236, 2011
4262011
Phosphorus containing Si epitaxial layers in N-type source/drain junctions
S Chopra, Z Ye, Y Kim
US Patent 7,960,236, 2011
4262011
Carbon-nanotube-based resonant-circuit sensor for ammonia
S Chopra, A Pham, J Gaillard, A Parker, AM Rao
Applied physics letters 80 (24), 4632-4634, 2002
4232002
Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts
A Agrawal, J Lin, M Barth, R White, B Zheng, S Chopra, S Gupta, K Wang, ...
Applied Physics Letters 104 (11), 2014
1752014
Punchthrough-diode-based bipolar RRAM selector by Si epitaxy
VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ...
IEEE Electron Device Letters 33 (10), 1396-1398, 2012
1082012
High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for Junction Diode
G Thareja, S Chopra, B Adams, Y Kim, S Moffatt, K Saraswat, Y Nishi
IEEE electron device letters 32 (7), 838-840, 2011
532011
Gas-induced variation in the dielectric properties of carbon nanotube bundles for selective sensing
F Picaud, R Langlet, M Arab, M Devel, C Girardet, S Natarajan, S Chopra, ...
Journal of Applied Physics 97 (11), 2005
532005
High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020cm−3
G Thareja, J Liang, S Chopra, B Adams, N Patil, SL Cheng, A Nainani, ...
2010 International Electron Devices Meeting, 10.5. 1-10.5. 4, 2010
482010
Role of intraventricular sodium nitroprusside in vasospasm secondary to aneurysmal subarachnoid haemorrhage: a 5-year prospective study with review of the literature
A Agrawal, R Patir, Y Kato, S Chopra, H Sano, T Kanno
min-Minimally Invasive Neurosurgery 52 (01), 5-8, 2009
432009
Methods of selectively depositing an epitaxial layer
Z Ye, S Chopra, Y Kim
US Patent 8,207,023, 2012
422012
Methods of selectively depositing an epitaxial layer
Z Ye, S Chopra, Y Kim
US Patent 8,207,023, 2012
422012
Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy
S Chopra, MC Ozturk, V Misra, K McGuire, LE McNeil
Applied physics letters 88 (20), 2006
392006
Carbon nanotube based resonant-circuit sensor
AM Rao, S Chopra
US Patent 6,997,039, 2006
392006
Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices
M Ozturk, V Misra, S Chopra
US Patent 7,211,458, 2007
372007
High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications
Z Ye, S Chopra, R Lapena, Y Kim, S Kuppurao
Meeting Abstracts, 3233-3233, 2012
312012
Low stress mechanical properties of silk fabric degummed by different methods
S Chopra, R Chattopadhyay, ML Gulrajani
Journal of the Textile Institute 87 (3), 542-553, 1996
301996
Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon
A Agrawal, J Lin, B Zheng, S Sharma, S Chopra, K Wang, A Gelatos, ...
2013 Symposium on VLSI Technology, T200-T201, 2013
252013
Method and apparatus for precleaning a substrate surface prior to epitaxial growth
CS Olsen, TK Guarini, J Tobin, L Hawrylchak, P Stone, CW Lo, S Chopra
US Patent 9,683,308, 2017
182017
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