| HfO₂-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... Electron Devices, IEEE Transactions on 62 (8), 2494-2501, 2015 | 152* | 2015 |
| Resistive Memories for Ultra-Low-Power embedded computing design E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanović, D Garbin, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 6.3. 1-6.3. 4, 2014 | 87 | 2014 |
| Variability-tolerant Convolutional Neural Network for Pattern Recognition Applications based on OxRAM Synapses D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 28.4. 1-28.4. 4, 2014 | 72 | 2014 |
| A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ... 2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012 | 43 | 2012 |
| Phase transitions in Ga–Sb phase change alloys S Raoux, AK König, HY Cheng, D Garbin, RW Cheek, JL Jordan‐Sweet, ... physica status solidi (b) 249 (10), 1999-2004, 2012 | 43 | 2012 |
| Spiking neural networks based on OxRAM synapses for real-time unsupervised spike sorting T Werner, E Vianello, O Bichler, D Garbin, D Cattaert, B Yvert, B De Salvo, ... Frontiers in neuroscience 10, 474, 2016 | 37 | 2016 |
| Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications G Piccolboni, G Molas, JM Portal, R Coquand, M Bocquet, D Garbin, ... 2015 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2015 | 31 | 2015 |
| Resistive memory variability: A simplified trap-assisted tunneling model D Garbin, E Vianello, Q Rafhay, M Azzaz, P Candelier, B DeSalvo, ... Solid State Electronics 116, 126-132, 2016 | 24 | 2016 |
| Probabilistic neuromorphic system using binary phase-change memory (PCM) synapses: Detailed power consumption analysis D Garbin, M Suri, O Bichler, D Querlioz, C Gamrat, B DeSalvo Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on, 91-94, 2013 | 21 | 2013 |
| Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategy M Suri, D Garbin, O Bichler, D Querlioz, D Vuillaume, C Gamrat, ... 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013 | 20 | 2013 |
| On the impact of OxRAM-based synapses variability on convolutional neural networks performance D Garbin, E Vianello, O Bichler, M Azzaz, Q Rafhay, P Candelier, ... Nanoscale Architectures (NANOARCH), 2015 IEEE/ACM International Symposium on …, 2015 | 17 | 2015 |
| Design-technology co-optimization for OxRRAM-based synaptic processing unit A Mallik, D Garbin, A Fantini, D Rodopoulos, R Degraeve, J Stuijt, AK Das, ... 2017 Symposium on VLSI Technology, T178-T179, 2017 | 16 | 2017 |
| Modeling of OxRAM Variability from Low to High Resistance State using a Stochastic Trap Assisted Tunneling-based Resistor Network D Garbin, Q Rafhay, E Vianello, S Jeannot, P Candelier, B DeSalvo, ... 2015 Joint International EUROSOI Workshop and International Conference on …, 2015 | 13 | 2015 |
| From Memory in our Brain to Emerging Resistive Memories in Neuromorphic Systems B DeSalvo, E Vianello, D Garbin, O Bichler, L Perniola Memory Workshop (IMW), 2015 IEEE International, 1 - 4, 2015 | 12 | 2015 |
| Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization M Azzaz, A Benoist, E Vianello, D Garbin, E Jalaguier, C Cagli, C Charpin, ... Solid State Device Research Conference (ESSDERC), 2015 45th European, 266-269, 2015 | 11 | 2015 |
| Improvement of performances HfO 2-based RRAM from elementary cell to 16kb demonstrator by introduction of thin layer of Al 2 O 3 M Azzaz, A Benoist, E Vianello, D Garbin, E Jalaguier, C Cagli, C Charpin, ... Solid-State Electronics 125, 182-188, 2016 | 8 | 2016 |
| Investigation of Cycle-to-Cycle Variability in HfO 2-Based OxRAM G Piccolboni, G Molas, D Garbin, E Vianello, O Cueto, C Cagli, B Traore, ... IEEE Electron Device Letters 37 (6), 721-723, 2016 | 8 | 2016 |
| Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... IEEE Electron Device Letters 40 (8), 1269-1272, 2019 | 7 | 2019 |
| (Keynote) Oxide based Resistive Memories for Low Power Embedded Applications and Neuromorphic Systems E Vianello, D Garbin, N Jovanovic, O Bichler, O Thomas, B de Salvo, ... ECS Transactions 69 (3), 3, 2015 | 7 | 2015 |
| GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ... IEEE Electron Device Letters 41 (2), 228-231, 2019 | 6 | 2019 |
elisa vianelloScientist, CEA LetiVerified email at cea.fr
