| Demonstration of β-(AlxGa1− x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy E Ahmadi, OS Koksaldi, X Zheng, T Mates, Y Oshima, UK Mishra, ... Applied Physics Express 10 (7), 071101, 2017 | 234 | 2017 |
| Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50, 2017 | 191 | 2017 |
| N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 38 (3), 359-362, 2017 | 105 | 2017 |
| W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 92 | 2020 |
| 6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ... IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021 | 45 | 2021 |
| N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ... IEEE Electron Device Letters 37 (6), 713-716, 2016 | 45 | 2016 |
| N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ... IEEE Electron Device Letters 37 (1), 77-80, 2015 | 43 | 2015 |
| W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016 | 37 | 2016 |
| Engineering the (In, Al, Ga) N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors J Lu, X Zheng, M Guidry, D Denninghoff, E Ahmadi, S Lal, S Keller, ... Applied Physics Letters 104 (9), 2014 | 37 | 2014 |
| Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ... 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 32 | 2016 |
| High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ... 2016 Lester Eastman Conference (LEC), 42-45, 2016 | 28 | 2016 |
| High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ... 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017 | 26 | 2017 |
| Demonstration of 30 GHz OIP3/PDC> 10 dB by mm-wave N-polar deep recess MISHEMTs M Guidry, B Romanczyk, H Li, E Ahmadi, S Wienecke, X Zheng, S Keller, ... 2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-67, 2019 | 25 | 2019 |
| Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High X Zheng, H Li, M Guidry, B Romanczyk, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 39 (3), 409-412, 2018 | 24 | 2018 |
| Record 34.2% efficient mm‐wave N‐polar AlGaN/GaN MISHEMT at 87 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... Electronics Letters 52 (21), 1813-1814, 2016 | 24 | 2016 |
| W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width M Guidry, S Wienecke, B Romanczyk, X Zheng, H Li, E Ahmadi, ... 2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016 | 24 | 2016 |
| Bias-dependent electron velocity extracted from N-polar GaN deep recess HEMTs B Romanczyk, M Guidry, X Zheng, H Li, E Ahmadi, S Keller, UK Mishra IEEE Transactions on Electron Devices 67 (4), 1542-1546, 2020 | 21 | 2020 |
| Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE B Romanczyk, M Guidry, X Zheng, P Shrestha, H Li, E Ahmadi, S Keller, ... Applied Physics Letters 119 (7), 2021 | 17 | 2021 |
| Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels H Li, S Wienecke, B Romanczyk, E Ahmadi, M Guidry, X Zheng, S Keller, ... Applied Physics Letters 112 (7), 2018 | 16 | 2018 |
| mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire B Romanczyk, S Wienecke, M Guidry, H Li, K Hestroffer, E Ahmadi, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 16 | 2016 |
Umesh MishraUCSB確認したメール アドレス: ece.ucsb.edu
