WARREN B JACKSON
WARREN B JACKSON
Principal Scientist
確認したメール アドレス: parc.com
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引用先
引用先
Photothermal deflection spectroscopy and detection
WB Jackson, NM Amer, AC Boccara, D Fournier
Applied optics 20 (8), 1333-1344, 1981
16261981
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
M Stutzmann, WB Jackson, CC Tsai
Physical Review B 32 (1), 23, 1985
15121985
A polymer/semiconductor write-once read-many-times memory
S Möller, C Perlov, W Jackson, C Taussig, SR Forrest
Nature 426 (6963), 166-169, 2003
8092003
Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
WB Jackson, NM Amer
Physical Review B 25 (8), 5559, 1982
7411982
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
J Kakalios, RA Street, WB Jackson
Physical review letters 59 (9), 1037, 1987
7041987
Piezoelectric photoacoustic detection: theory and experiment
W Jackson, NM Amer
Journal of Applied Physics 51 (6), 3343-3353, 1980
4481980
Sensitive photothermal deflection technique for measuring absorption in optically thin media
AC Boccara, D Fournier, W Jackson, NM Amer
Optics Letters 5 (9), 377-379, 1980
4191980
Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon
WB Jackson, SM Kelso, CC Tsai, JW Allen, SJ Oh
Physical Review B 31 (8), 5187, 1985
3671985
High-performance flexible zinc tin oxide field-effect transistors
WB Jackson, RL Hoffman, GS Herman
Applied physics letters 87 (19), 193503, 2005
3082005
Hydrogen diffusion in amorphous silicon
RA Street, CC Tsai, J Kakalios, WB Jackson
Philosophical Magazine B 56 (3), 305-320, 1987
3071987
Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
IW Wu, TY Huang, WB Jackson, AG Lewis, A Chiang
IEEE electron device letters 12 (4), 181-183, 1991
2891991
Density of gap states of silicon grain boundaries determined by optical absorption
WB Jackson, NM Johnson, DK Biegelsen
Applied physics letters 43 (2), 195-197, 1983
2651983
Electronic device with recovery layer proximate to active layer
WB Jackson, M Hack
US Patent 5,081,513, 1992
2381992
Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
WB Jackson, JM Marshall, MD Moyer
Physical Review B 39 (2), 1164, 1989
2331989
Hydrogen transport in amorphous silicon
WB Jackson, CC Tsai
Physical Review B 45 (12), 6564, 1992
1831992
Microdevice valve structures to fluid control
DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin
US Patent 5,971,355, 1999
1811999
Mechanisms of thermal equilibration in doped amorphous silicon
RA Street, M Hack, WB Jackson
Physical Review B 37 (8), 4209, 1988
1801988
Connection between the Meyer-Neldel relation and multiple-trapping transport
WB Jackson
Physical Review B 38 (5), 3595, 1988
1701988
Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon
WB Jackson, J Kakalios
Physical Review B 37 (2), 1020, 1988
1701988
Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
WB Jackson, MD Moyer
Physical Review B 36 (11), 6217, 1987
1701987
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