フォロー
Kwang-Hoon Oh 오광훈
Kwang-Hoon Oh 오광훈
その他の名前Kwang Hoon Oh, Kwanghoon Oh
確認したメール アドレス: skku.edu - ホームページ
タイトル
引用先
引用先
Direct tunneling current model for circuit simulation
CH Choi, KH Oh, JS Goo, Z Yu, RW Dutton
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
701999
Analysis of nonuniform ESD current distribution in deep submicron NMOS transistors
KH Oh, C Duvvury, K Banerjee, RW Dutton
IEEE Transactions on Electron Devices 49 (12), 2171-2182, 2002
672002
A simulation study on novel field stop IGBTs using superjunction
KH Oh, J Lee, KH Lee, YC Kim, C Yun
IEEE transactions on electron devices 53 (4), 884-890, 2006
502006
Charge balance insulated gate bipolar transistor
J Yedinak, K Oh, C Yun, J Lee
US Patent App. 11/408,812, 2007
432007
Charge balance insulated gate bipolar transistor
J Yedinak, K Oh, C Yun, J Lee
US Patent App. 11/408,812, 2007
432007
Experimental investigation of 650V superjunction IGBTs
KH Oh, J Kim, H Seo, J Jung, E Kim, SS Kim, C Yun
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
332016
Non-uniform bipolar conduction in single finger NMOS transistors and implications for deep submicron ESD design
KH Oh, C Duvvury, C Salling, K Banerjee, RW Dutton
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001
332001
Guidelines for the power constrained design of a CMOS tuned LNA
JS Goo, KH Oh, CH Choi, Z Yu, TH Lee, RW Dutton
2000 International Conference on Simulation Semiconductor Processes and …, 2000
262000
Guidelines for the power constrained design of a CMOS tuned LNA
JS Goo, KH Oh, CH Choi, Z Yu, TH Lee, RW Dutton
2000 International Conference on Simulation Semiconductor Processes and …, 2000
262000
New power MOSFET employing segmented trench body contact for improving the avalanche energy
IH Ji, KH Cho, MK Han, SC Lee, SS Kim, KH Oh, CM Yun
2008 20th International Symposium on Power Semiconductor Devices and IC's …, 2008
252008
Electron Devices Meeting
CH Choi, K Onishi, CS Kang, S Gopalan, R Nieh, Y Kim
IEDM Technical Digest, 735-738, 1999
241999
Investigation of short-circuit failure limited by dynamic-avalanche capability in 600-V punchthrough IGBTs
KH Oh, YC Kim, KH Lee, CM Yun
IEEE Transactions on Device and Materials Reliability 6 (1), 2-8, 2006
232006
Impact of gate-to-contact spacing on ESD performance of salicided deep submicron NMOS transistors
KH Oh, C Duvvury, K Banerjee, RW Dutton
IEEE Transactions on Electron Devices 49 (12), 2183-2192, 2002
232002
Investigation of ESD performance in advanced CMOS technology
KH Oh
Stanford University, 2003
222003
Investigation of gate to contact spacing effect on ESD robustness of salicided deep submicron single finger NMOS transistors
KH Oh, C Duvvury, K Banerjee, RW Dutton
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th …, 2002
222002
Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same
CM Yun, KH Oh, KH Lee, Y Kim
US Patent 7,645,659, 2010
192010
Analysis of gate-bias-induced heating effects in deep-submicron ESD protection designs
KH Oh, C Duvvury, K Banerjee, RW Dutton
IEEE transactions on device and materials reliability 2 (2), 36-42, 2002
182002
Gate bias induced heating effect and implications for the design of deep submicron ESD protection
KH Oh, C Duvvury, K Banerjee, RW Dutton
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
172001
Modeling of temperature dependent contact resistance for analysis of ESD reliability
KH Oh, JH Chun, K Banerjee, C Duvvury, RW Dutton
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
162003
Geometry-controllable design blocks of MOS transistors for improved ESD protection
C Duvvury, KH Oh
US Patent 6,833,568, 2004
152004
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