| Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor E Prati, M Hori, F Guagliardo, G Ferrari, T Shinada Nature nanotechnology 7 (7), 443-447, 2012 | 126 | 2012 |
| A reliable method for the counting and control of single ions for single-dopant controlled devices T Shinada, T Kurosawa, H Nakayama, Y Zhu, M Hori, I Ohdomari Nanotechnology 19 (34), 345202, 2008 | 62 | 2008 |
| Band transport across a chain of dopant sites in silicon over micron distances and high temperatures E Prati, K Kumagai, M Hori, T Shinada Scientific reports 6 (1), 19704, 2016 | 52 | 2016 |
| Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors A Samanta, M Muruganathan, M Hori, Y Ono, H Mizuta, M Tabe, D Moraru Applied Physics Letters 110 (9), 2017 | 34 | 2017 |
| Charge Pumping Under Spin Resonance in Metal-Oxide-Semiconductor Transistors M Hori, Y Ono Physical Review Applied 11 (6), 064064, 2019 | 24 | 2019 |
| Analysis of electron capture process in charge pumping sequence using time domain measurements M Hori, T Watanabe, T Tsuchiya, Y Ono Applied Physics Letters 105 (26), 2014 | 22 | 2014 |
| Quantum transport in deterministically implanted single-donors in Si FETs T Shinada, M Hori, F Guagliardo, G Ferrari, A Komatubara, K Kumagai, ... 2011 International Electron Devices Meeting, 30.4. 1-30.4. 4, 2011 | 22 | 2011 |
| Performance enhancement of semiconductor devices by control of discrete dopant distribution M Hori, T Shinada, K Taira, N Shimamoto, T Tanii, T Endo, I Ohdomari Nanotechnology 20 (36), 365205, 2009 | 19 | 2009 |
| Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors M Hori, T Shinada, Y Ono, A Komatsubara, K Kumagai, T Tanii, T Endoh, ... Applied Physics Letters 99 (6), 2011 | 17 | 2011 |
| Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current M Hori, T Watanabe, T Tsuchiya, Y Ono Applied Physics Letters 106 (4), 2015 | 15 | 2015 |
| Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping M Hori, T Shinada, K Taira, A Komatsubara, Y Ono, T Tanii, T Endoh, ... Applied physics express 4 (4), 046501, 2011 | 13 | 2011 |
| Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes G Prabhudesai, M Muruganathan, H Mizuta, M Hori, Y Ono, M Tabe, ... Applied Physics Letters 114 (24), 2019 | 11 | 2019 |
| Time-domain charge pumping on silicon-on-insulator MOS devices T Watanabe, M Hori, T Tsuchiya, A Fujiwara, Y Ono Japanese Journal of Applied Physics 56 (1), 011303, 2016 | 11 | 2016 |
| Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal–oxide–semiconductor field-effect transistor M Hori, T Tsuchiya, Y Ono Applied Physics Express 10 (1), 015701, 2016 | 10 | 2016 |
| Coulomb-blockade transport in selectively-doped Si nano-transistors A Afiff, A Samanta, A Udhiarto, H Sudibyo, M Hori, Y Ono, M Tabe, ... Applied Physics Express 12 (8), 085004, 2019 | 8 | 2019 |
| Electron aspirator using electron–electron scattering in nanoscale silicon H Firdaus, T Watanabe, M Hori, D Moraru, Y Takahashi, A Fujiwara, ... Nature Communications 9 (1), 4813, 2018 | 8 | 2018 |
| Evaluation of accuracy of charge pumping current in time domain T Watanabe, M Hori, T Saruwatari, T Tsuchiya, Y Ono IEICE Transactions on Electronics 98 (5), 390-394, 2015 | 8 | 2015 |
| Electrical activation and electron spin resonance measurements of arsenic implanted in silicon M Hori, M Uematsu, A Fujiwara, Y Ono Applied Physics Letters 106 (14), 2015 | 8 | 2015 |
| Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position M Hori, K Taira, A Komatsubara, K Kumagai, Y Ono, T Tanii, T Endoh, ... Applied Physics Letters 101 (1), 2012 | 8 | 2012 |
| Single ion implantation of Ge donor impurity in silicon transistors E Prati, Y Chiba, M Yano, K Kumagai, M Hori, G Ferrari, T Shinada, ... 2015 Silicon Nanoelectronics Workshop (SNW), 1-2, 2015 | 6 | 2015 |
