On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors H Wong, H Iwai Microelectronic Engineering 83 (10), 1867-1904, 2006 | 501 | 2006 |
Low-frequency noise study in electron devices: review and update H Wong Microelectronics Reliability 43 (4), 585-599, 2003 | 160 | 2003 |
Electronic structure and charge transport properties of amorphous Ta2O5 films VA Shvets, VS Aliev, DV Gritsenko, SS Shaimeev, EV Fedosenko, ... Journal of non-crystalline solids 354 (26), 3025-3033, 2008 | 145 | 2008 |
Conduction mechanisms in MOS gate dielectric films BL Yang, PT Lai, H Wong Microelectronics Reliability 44 (5), 709-718, 2004 | 131 | 2004 |
Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment TV Perevalov, AV Shaposhnikov, VA Gritsenko, H Wong, JH Han, CW Kim Jetp Letters 85, 165-168, 2007 | 120 | 2007 |
Defects in silicon oxynitride gate dielectric films H Wong, VA Gritsenko Microelectronics Reliability 42 (4-5), 597-605, 2002 | 112 | 2002 |
Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations TV Perevalov, VA Gritsenko, SB Erenburg, AM Badalyan, H Wong, ... Journal of Applied Physics 101 (5), 2007 | 109 | 2007 |
Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures VA Gritsenko, H Wong, JB Xu, RM Kwok, IP Petrenko, BA Zaitsev, ... Journal of applied physics 86 (6), 3234-3240, 1999 | 106 | 1999 |
The road to miniaturization H Wong, H Iwai Physics World 18 (9), 40, 2005 | 96 | 2005 |
Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride VA Gritsenko, RWM Kwok, H Wong, JB Xu Journal of non-crystalline solids 297 (1), 96-101, 2002 | 92 | 2002 |
XPS study of the thermal instability of HfO2 prepared by Hf sputtering in oxygen with RTA N Zhan, MC Poon, CW Kok, KL Ng, H Wong Journal of the Electrochemical Society 150 (10), F200, 2003 | 88 | 2003 |
Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance VA Gritsenko, KS Zhuravlev, AD Milov, H Wong, RWM Kwok, JB Xu Thin Solid Films 353 (1-2), 20-24, 1999 | 82 | 1999 |
Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen H Wong, KL Ng, N Zhan, MC Poon, CW Kok Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 81 | 2004 |
Recent developments in silicon optoelectronic devices H Wong 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No …, 2002 | 80 | 2002 |
Nanometer Cmos F Schwierz, H Wong, JJ Liou Pan Stanford Publishing, 2010 | 75* | 2010 |
X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics J Zhang, H Wong, D Yu, K Kakushima, H Iwai AIP Advances 4 (11), 2014 | 69 | 2014 |
Luminescence of intrinsic and extrinsic defects in hafnium oxide films AA Rastorguev, VI Belyi, TP Smirnova, LV Yakovkina, MV Zamoryanskaya, ... Physical Review B 76 (23), 235315, 2007 | 67 | 2007 |
Nano-CMOS gate dielectric engineering H Wong Crc Press, 2017 | 65 | 2017 |
Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectric H Wong, B Sen, V Filip, MC Poon Thin Solid Films 504 (1-2), 192-196, 2006 | 64 | 2006 |
Bonding structures of silicon oxynitride prepared by oxidation of Si-rich silicon nitride MC Poon, CW Kok, H Wong, PJ Chan Thin Solid Films 462, 42-45, 2004 | 61 | 2004 |