Michael Kneissl
Michael Kneissl
Professor, Institute of Solid State Physics, TU Berlin, Germany
確認したメール アドレス: physik.tu-berlin.de - ホームページ
タイトル引用先
Advances in group III-nitride-based deep UV light-emitting diode technology
M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, J Stellmach, A Knauer, ...
Semiconductor Science and Technology 26 (1), 014036, 2010
5622010
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied physics letters 75 (10), 1360-1362, 1999
3991999
Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars
GD Chern, HE Tureci, AD Stone, RK Chang, M Kneissl, NM Johnson
Applied Physics Letters 83 (9), 1710-1712, 2003
2982003
Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection
MA Würtele, T Kolbe, M Lipsz, A Külberg, M Weyers, M Kneissl, M Jekel
Water research 45 (3), 1481-1489, 2011
2732011
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied Physics Letters 77 (18), 2822-2824, 2000
2362000
Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates
TJ Cervantes, LT Romano, MA Kneissl
US Patent 6,379,985, 2002
1982002
Metastability of oxygen donors in AlGaN
MD McCluskey, NM Johnson, CG Van de Walle, DP Bour, M Kneissl, ...
Physical Review Letters 80 (18), 4008, 1998
1881998
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
WS Wong, MA Kneissl
US Patent 6,562,648, 2003
1872003
III-Nitride ultraviolet emitters
M Kneissl, J Rass
Springer Series in Materials Science, 2016
1842016
Method of fabricating GAN semiconductor structures using laser-assisted epitaxial liftoff
CL Chua, MA Kneissl, DP Bour
US Patent 6,455,340, 2002
1712002
Method for nitride based laser diode with growth substrate removed using an intermediate substrate
MA Kneissl, DP Bour, P Mei, LT Romano
US Patent 6,365,429, 2002
1712002
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
MA Kneissl
US Patent 7,751,455, 2010
1652010
Ultraviolet semiconductor laser diodes on bulk AlN
M Kneissl, Z Yang, M Teepe, C Knollenberg, O Schmidt, P Kiesel, ...
Journal of Applied Physics 101 (12), 123103, 2007
1542007
Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission
M Kneissl, M Teepe, N Miyashita, NM Johnson, GD Chern, RK Chang
Applied Physics Letters 84 (14), 2485-2487, 2004
1532004
Nitride-based VCSEL or light emitting diode with pn tunnel junction current injection
MA Kneissl, P Kiesel, CG Van de Walle
US Patent 6,515,308, 2003
1512003
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ...
Applied Physics Letters 100 (2), 021101, 2012
1322012
Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes
T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ...
Applied Physics Letters 97 (17), 171105, 2010
1322010
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
T Wernicke, L Schade, C Netzel, J Rass, V Hoffmann, S Ploch, A Knauer, ...
Semiconductor science and technology 27 (2), 024014, 2012
1272012
Nitride emitters go nonpolar
UT Schwarz, M Kneissl
physica status solidi (RRL)–Rapid Research Letters 1 (3), A44-A46, 2007
1242007
Method for nitride based laser diode with growth substrate removed
MA Kneissl, DP Bour, P Mei, LT Romano
US Patent 6,448,102, 2002
1232002
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