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Irina Khmyrova
Irina Khmyrova
Verified email at u-aizu.ac.jp
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Cited by
Cited by
Year
Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors
V Ryzhii, I Khmyrova, M Ryzhii, V Mitin
Semiconductor science and technology 19 (1), 8, 2003
1092003
Device model for quantum dot infrared photodetectors and their dark-current characteristics
V Ryzhii, I Khmyrova, V Pipa, V Mitin, M Willander
Semiconductor science and technology 16 (5), 331, 2001
1042001
On the detectivity of quantum-dot infrared photodetectors
V Ryzhii, I Khmyrova, V Mitin, M Stroscio, M Willander
Applied Physics Letters 78 (22), 3523-3525, 2001
1022001
Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors
A Satou, I Khmyrova, V Ryzhii, MS Shur
Semiconductor science and technology 18 (6), 460, 2003
912003
Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations
V Ryzhii, I Khmyrova, M Shur
Journal of applied physics 91 (4), 1875-1881, 2002
912002
Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions
A Satou, V Ryzhii, I Khmyrova, M Ryzhii, MS Shur
Journal of applied physics 95 (4), 2084-2089, 2004
842004
Plasma mechanism of terahertz photomixing in high-electron mobility transistor under interband photoexcitation
V Ryzhii, I Khmyrova, A Satou, PO Vaccaro, T Aida, M Shur
Journal of Applied Physics 92 (10), 5756-5760, 2002
762002
Dark current in quantum dot infrared photodetectors
VRV Ryzhii, VPV Pipa, IKI Khmyrova, VMV Mitin, MWM Willander
Japanese Journal of Applied Physics 39 (12B), L1283, 2000
762000
Analysis of plasma oscillations in high-electron mobility transistorlike structures: Distributed circuit approach
I Khmyrova, Y Seijyou
Applied Physics Letters 91 (14), 2007
532007
Plasma oscillations in a slot diode structure with a two-dimensional electron channel
V Ryzhii, A Satou, I Khmyrova, A Chaplik, MS Shur
Journal of applied Physics 96 (12), 7625-7628, 2004
482004
Analysis of integrated quantum-well infrared photodetector and light-emitting diode for implementing pixelless imaging devices
V Ryzhii, HC Liu, I Khmyrova, M Ryzhii
IEEE Journal of quantum electronics 33 (9), 1527-1531, 1997
471997
Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors
V Ryzhii, I Khmyrova, M Shur
Journal of Applied Physics 88 (5), 2868-2871, 2000
432000
Quantum well infrared photodetector with optical output
VR Ershov, MRM Ryzhii, IKI Khmyrova
Japanese journal of applied physics 34 (1A), L38, 1995
351995
Impact of transit-time and capture effects on high-frequency performance of multiple quantum-well infrared photodetectors
V Ryzhii, I Khmyrova, M Ryzhii
IEEE Transactions on Electron Devices 45 (1), 293-298, 1998
311998
Finite element analysis of self-positioning microstructures and nanostructures
GP Nikishkov, I Khmyrova, V Ryzhii
Nanotechnology 14 (7), 820, 2003
272003
Comparison studies of infrared phototransistors with a quantum-well and a quantum-wire base
V Ryzhii, I Khmyrova, M Ryzhii, M Ershov
Le Journal de Physique IV 6 (C3), C3-157-C3-161, 1996
251996
Phenomenological theory of electric-field domains induced by infrared radiation in multiple quantum well structures
V Ryzhii, I Khmyrova, M Ryzhii, R Suris, C Hamaguchi
Physical Review B 62 (11), 7268, 2000
212000
DEVICE PHYSICS (PACS 85)-Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors
V Ryzhii, I Khmyrova, M Shur
Journal of Applied Physics 88 (5), 2868-2871, 2000
202000
High-frequency response of intersubband infrared photodetectors with a multiple quantum well structure
VRV Ryzhii, IKI Khmyrova, MRM Ryzhii
Japanese journal of applied physics 36 (5R), 2596, 1997
201997
Analysis of fringing effect on resonant plasma frequency in plasma wave devices
T Nishimura, N Magome, I Khmyrova, T Suemitsu, W Knap, T Otsuji
Japanese Journal of Applied Physics 48 (4S), 04C096, 2009
192009
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