Bretagnon Thierry
Bretagnon Thierry
Professeur de Physique, Université de Montpellier, Laboratoire Charles Coulomb, L2C, CNRS, Physics
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Internal electric field in wurtzite Zn O∕ Zn 0.78 Mg 0.22 O quantum wells
C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B 72 (24), 241305, 2005
Radiative lifetime of a single electron-hole pair in Ga N∕ Al N quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
Polariton lasing in a hybrid bulk ZnO microcavity
T Guillet, M Mexis, J Levrat, G Rossbach, C Brimont, T Bretagnon, B Gil, ...
Applied Physics Letters 99 (16), 161104, 2011
Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In) N/GaN systems
A Morel, P Lefebvre, S Kalliakos, T Taliercio, T Bretagnon, B Gil
Physical Review B 68 (4), 045331, 2003
Barrier composition dependence of the internal electric field in quantum wells
T Bretagnon, P Lefebvre, T Guillet, T Taliercio, B Gil, C Morhain
Applied physics letters 90 (20), 201912, 2007
Confined excitons in GaN–AlGaN quantum wells
P Bigenwald, P Lefebvre, T Bretagnon, B GilBigenwald
physica status solidi (b) 216 (1), 371-374, 1999
Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory
R Bardoux, T Guillet, B Gil, P Lefebvre, T Bretagnon, T Taliercio, ...
Physical Review B 77 (23), 235315, 2008
Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn, Mg) O quantum wells
L Béaur, T Bretagnon, B Gil, A Kavokin, T Guillet, C Brimont, D Tainoff, ...
Physical Review B 84 (16), 165312, 2011
Photoluminescence of single GaN∕ AlN hexagonal quantum dots on Si (111): Spectral diffusion effects
R Bardoux, T Guillet, P Lefebvre, T Taliercio, T Bretagnon, S Rousset, ...
Physical Review B 74 (19), 195319, 2006
Vacancy‐type defects in crystalline and amorphous SiO2
S Dannefaer, T Bretagnon, D Kerr
Journal of applied physics 74 (2), 884-890, 1993
Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities
S Faure, T Guillet, P Lefebvre, T Bretagnon, B Gil
Physical Review B 78 (23), 235323, 2008
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite G a N/A l 0.15 Ga 0.85 N quantum well after high photoexcitation
P Lefebvre, S Kalliakos, T Bretagnon, P Valvin, T Taliercio, B Gil, ...
Physical Review B 69 (3), 035307, 2004
High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al (Ga) N quantum dots
M Mexis, S Sergent, T Guillet, C Brimont, T Bretagnon, B Gil, F Semond, ...
Optics letters 36 (12), 2203-2205, 2011
Vacancies in polycrystalline diamond films
S Dannefaer, W Zhu, T Bretagnon, D Kerr
Physical Review B 53 (4), 1979, 1996
Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
S Kalliakos, T Bretagnon, P Lefebvre, T Taliercio, B Gil, N Grandjean, ...
Journal of applied physics 96 (1), 180-185, 2004
Excitons in nitride heterostructures: From zero-to one-dimensional behavior
D Rosales, T Bretagnon, B Gil, A Kahouli, J Brault, B Damilano, J Massies, ...
Physical Review B 88 (12), 125437, 2013
Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
S Faure, C Brimont, T Guillet, T Bretagnon, B Gil, F Médard, D Lagarde, ...
Applied Physics Letters 95 (12), 121102, 2009
Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
T Bretagnon, S Kalliakos, P Lefebvre, P Valvin, B Gil, N Grandjean, ...
Physical Review B 68 (20), 205301, 2003
AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
D Néel, S Sergent, M Mexis, D Sam-Giao, T Guillet, C Brimont, ...
Applied Physics Letters 98 (26), 261106, 2011
Laser emission with excitonic gain in a ZnO planar microcavity
T Guillet, C Brimont, P Valvin, B Gil, T Bretagnon, F Médard, M Mihailovic, ...
Applied Physics Letters 98 (21), 211105, 2011
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