Ryo Matsumura
Ryo Matsumura
確認したメール アドレス: nims.go.jp
タイトル引用先
Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth
M Kurosawa, Y Tojo, R Matsumura, T Sadoh, M Miyao
Applied Physics Letters 101 (9), 091905, 2012
362012
Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding
H Chikita, R Matsumura, Y Kai, T Sadoh, M Miyao
Applied Physics Letters 105 (20), 202112, 2014
272014
Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth
R Matsumura, Y Tojo, M Kurosawa, T Sadoh, I Mizushima, M Miyao
Applied Physics Letters 101 (24), 241904, 2012
272012
High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization
T Sadoh, Y Kai, R Matsumura, K Moto, M Miyao
Applied Physics Letters 109 (23), 232106, 2016
212016
High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth
Y Tojo, R Matsumura, H Yokoyama, M Kurosawa, K Toko, T Sadoh, ...
Applied Physics Letters 102 (9), 092102, 2013
162013
Low-temperature (∼ 180° C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding
R Matsumura, H Chikita, Y Kai, T Sadoh, H Ikenoue, M Miyao
Applied Physics Letters 107 (26), 262106, 2015
112015
Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration
K Moto, R Matsumura, T Sadoh, H Ikenoue, M Miyao
Applied Physics Letters 108 (26), 262105, 2016
92016
Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth
R Matsumura, R Kato, T Sadoh, M Miyao
Applied Physics Letters 105 (10), 102106, 2014
82014
Crystallization of electrodeposited germanium thin film on silicon (100)
M Abidin, R Matsumura, M Anisuzzaman, JH Park, S Muta, M Mahmood, ...
Materials 6 (11), 5047-5057, 2013
82013
Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation
T Katoh, R Matsumura, R Takaguchi, M Takenaka, S Takagi
Japanese Journal of Applied Physics 57 (4S), 04FD15, 2018
72018
Ge p-channel tunneling FETs with steep phosphorus profile source junctions
R Takaguchi, R Matsumura, T Katoh, M Takenaka, S Takagi
Japanese Journal of Applied Physics 57 (4S), 04FD10, 2018
72018
Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe
R Matsumura, T Katoh, R Takaguchi, M Takenaka, S Takagi
Japanese Journal of Applied Physics 57 (4S), 04FD05, 2018
62018
Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region
R Matsumura, R Kato, Y Tojo, M Kurosawa, T Sadoh, M Miyao
ECS Solid State Letters 3 (5), P61-P64, 2014
62014
Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤ 250° C)
R Matsumura, M Sasaki, H Chikita, T Sadoh, M Miyao
ECS Solid State Letters 4 (12), P95-P97, 2015
52015
The effects of annealing temperatures on composition and strain in SixGe1− x obtained by melting growth of electrodeposited Ge on Si (100)
M Abidin, T Morshed, H Chikita, Y Kinoshita, S Muta, M Anisuzzaman, ...
Materials 7 (2), 1409-1421, 2014
52014
ECS Solid State Lett. 3
R Matsumura, R Kato, Y Tojo, M Kurosawa, T Sadoh, M Miyao
P61, 2014
52014
In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth
H Chikita, R Matsumura, Y Tojo, H Yokoyama, T Sadoh, M Miyao
Thin Solid Films 557, 139-142, 2014
42014
Ultra-low temperature (≤ 300° C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures
T Sadoh, H Chikita, R Matsumura, M Miyao
Journal of Applied Physics 118 (9), 095707, 2015
32015
High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region
R Matsumura, Y Kai, H Chikita, T Sadoh, M Miyao
AIP Advances 5 (6), 067112, 2015
32015
Laterally-graded doping into Ge-on-insulator by combination of ion-implantation and rapid-melting growth
R Matsumura, M Anisuzzaman, H Yokoyama, T Sadoh, M Miyao
ECS Solid State Letters 2 (7), P58-P60, 2013
32013
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