Ryo Matsumura
Ryo Matsumura
確認したメール アドレス: nims.go.jp
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引用先
引用先
Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth
M Kurosawa, Y Tojo, R Matsumura, T Sadoh, M Miyao
Applied Physics Letters 101 (9), 091905, 2012
372012
Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth
R Matsumura, Y Tojo, M Kurosawa, T Sadoh, I Mizushima, M Miyao
Applied Physics Letters 101 (24), 241904, 2012
302012
Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding
H Chikita, R Matsumura, Y Kai, T Sadoh, M Miyao
Applied Physics Letters 105 (20), 202112, 2014
282014
High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization
T Sadoh, Y Kai, R Matsumura, K Moto, M Miyao
Applied Physics Letters 109 (23), 232106, 2016
252016
High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth
Y Tojo, R Matsumura, H Yokoyama, M Kurosawa, K Toko, T Sadoh, ...
Applied Physics Letters 102 (9), 092102, 2013
192013
Low-temperature (∼ 180° C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding
R Matsumura, H Chikita, Y Kai, T Sadoh, H Ikenoue, M Miyao
Applied Physics Letters 107 (26), 262106, 2015
122015
Ge p-channel tunneling FETs with steep phosphorus profile source junctions
R Takaguchi, R Matsumura, T Katoh, M Takenaka, S Takagi
Japanese Journal of Applied Physics 57 (4S), 04FD10, 2018
102018
Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration
K Moto, R Matsumura, T Sadoh, H Ikenoue, M Miyao
Applied Physics Letters 108 (26), 262105, 2016
102016
Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation
T Katoh, R Matsumura, R Takaguchi, M Takenaka, S Takagi
Japanese Journal of Applied Physics 57 (4S), 04FD15, 2018
92018
Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe
R Matsumura, T Katoh, R Takaguchi, M Takenaka, S Takagi
Japanese Journal of Applied Physics 57 (4S), 04FD05, 2018
92018
Crystallization of electrodeposited germanium thin film on silicon (100)
MSZ Abidin, R Matsumura, M Anisuzzaman, JH Park, S Muta, ...
Materials 6 (11), 5047-5057, 2013
92013
Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth
R Matsumura, R Kato, T Sadoh, M Miyao
Applied Physics Letters 105 (10), 102106, 2014
82014
Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region
R Matsumura, R Kato, Y Tojo, M Kurosawa, T Sadoh, M Miyao
ECS Solid State Letters 3 (5), P61, 2014
62014
Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤ 250° C)
R Matsumura, M Sasaki, H Chikita, T Sadoh, M Miyao
ECS Solid State Letters 4 (12), P95, 2015
52015
The effects of annealing temperatures on composition and strain in SixGe1− x obtained by melting growth of electrodeposited Ge on Si (100)
MSZ Abidin, T Morshed, H Chikita, Y Kinoshita, S Muta, M Anisuzzaman, ...
Materials 7 (2), 1409-1421, 2014
52014
ECS Solid State Lett. 3
R Matsumura, R Kato, Y Tojo, M Kurosawa, T Sadoh, M Miyao
P61, 2014
52014
Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies
S Takagi, WK Kim, KW Jo, R Matsumura, R Takaguchi, T Katoh, TE Bae, ...
ECS Transactions 86 (7), 75, 2018
42018
In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth
H Chikita, R Matsumura, Y Tojo, H Yokoyama, T Sadoh, M Miyao
Thin solid films 557, 139-142, 2014
42014
Laterally-graded doping into Ge-on-insulator by combination of ion-implantation and rapid-melting growth
R Matsumura, M Anisuzzaman, H Yokoyama, T Sadoh, M Miyao
ECS Solid State Letters 2 (7), P58, 2013
42013
Au–Sn Catalyzed Growth of Ge1–xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation
YL Sun, R Matsumura, W Jevasuwan, N Fukata
Nano letters 19 (9), 6270-6277, 2019
32019
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