Phan Trong Tue
Cited by
Cited by
High-performance solution-processed ZrInZnO thin-film transistors
PT Tue, T Miyasako, J Li, HTC Tu, S Inoue, E Tokumitsu, T Shimoda
IEEE transactions on electron devices 60 (1), 320-326, 2012
Rheology printing for metal-oxide patterns and devices
T Kaneda, D Hirose, T Miyasako, PT Tue, Y Murakami, S Kohara, J Li, ...
Journal of Materials Chemistry C 2 (1), 40-49, 2014
Totally solution-processed ferroelectric-gate thin-film transistor
T Miyasako, BNQ Trinh, M Onoue, T Kaneda, PT Tue, E Tokumitsu, ...
Applied Physics Letters 97 (17), 173509, 2010
A low-temperature crystallization path for device-quality ferroelectric films
J Li, H Kameda, BNQ Trinh, T Miyasako, PT Tue, E Tokumitsu, T Mitani, ...
Applied physics letters 97 (10), 102905, 2010
Ferroelectric-gate thin-film transistor fabricated by total solution deposition process
T Miyasako, BNQ Trinh, M Onoue, T Kaneda, PT Tue, E Tokumitsu, ...
Japanese Journal of Applied Physics 50 (4S), 04DD09, 2011
Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors
PT Tue, S Inoue, Y Takamura, T Shimoda
Applied Physics A 122 (6), 1-8, 2016
Low-temperature all-solution-derived amorphous oxide thin-film transistors
PT Tue, J Li, T Miyasako, S Inoue, T Shimoda
IEEE electron device letters 34 (12), 1536-1538, 2013
Peptide aptamer-modified single-walled carbon nanotube-based transistors for high-performance biosensors
NT Tung, PT Tue, TTN Lien, Y Ohno, K Maehashi, K Matsumoto, ...
Scientific reports 7 (1), 1-9, 2017
Optimization of Pt and PZT films for ferroelectric-gate thin film transistors
PT Tue, T Miyasako, BNQ Trinh, J Li, E Tokumitsu, T Shimoda
Ferroelectrics 405 (1), 281-291, 2010
Investigation of Polysilazane-BasedGate Insulator for Oxide Semiconductor Thin-Film Transistors
HTC Tu, S Inoue, PT Tue, T Miyasako, T Shimoda
IEEE transactions on electron devices 60 (3), 1149-1153, 2013
Electrochemical immunoassay using open circuit potential detection labeled by platinum nanoparticles
K Charoenkitamorn, PT Tue, K Kawai, O Chailapakul, Y Takamura
Sensors 18 (2), 444, 2018
The role of color luminescence centers Mn, Cu, Co in the semicondutors with wide band gap ZnS, ZnO and their applications
PTT Pham Van Ben
VNU Journal of Science, Matticmatics - Physics 24, 181-187, 2008
Development of AC-driven liquid electrode plasma for sensitive detection of metals
D Van Khoai, H Miyahara, T Yamamoto, PT Tue, A Okino, Y Takamura
Japanese Journal of Applied Physics 55 (2S), 02BC23, 2016
Electrophoretic displays driven by all]oxide thin]film transistor backplanes fabricated using a solution process
TS Satoshi Inoue, Phan Trong Tue, Tomoko Hori, Hiroaki Koyama
Physica Status Solidi A 212, 2133, 2015
Hybrid cluster precursors of the LaZrO insulator for transistors: lowering the processing temperature
P Zhu, J Li, PT Tue, S Inoue, T Shimoda
Scientific reports 8 (1), 1-11, 2018
Interface charge trap density of solution processed ferroelectric gate thin film transistor using ITO/PZT/Pt structure
PV Thanh, BNQ Trinh, T Miyasako, PT Tue, E Tokumitsu, T Shimoda
Ferroelectrics Letters Section 40 (1-3), 17-29, 2013
Preparation of ruthenium metal and ruthenium oxide thin films by a low-temperature solution process
Y Murakami, PT Tue, H Tsukada, J Li, T Shimoda
ITE and SID, 2013
Solution-based process with thermal UV treatment for fabrication of piezoelectric PZT films for an actuator array at temperatures under 450 C
R Shimura, PT Tue, Y Tagashira, T Shimoda, Y Takamura
Sensors and Actuators A: Physical 267, 287-292, 2017
Surface‒Modified Lead‒Zirconium‒Titanate System for Solution-Processed Ferroelectric-Gate Thin-Film Transistors
TS Phan Trong Tue, Takaaki Miyasako, Koichi Higashimine, Eisuke Tokumitsu
Applied Physics A 113, 333, 2013
Fabrication and characterization of a ferroelectric-gate FET With a ITO/PZT/SRO/Pt stacked structure
PT Tue, BNQ Trinh, T Miyasako, E Tokumitsu, T Shimoda
2010 International Conference on Microelectronics, 32-35, 2010
The system can't perform the operation now. Try again later.
Articles 1–20