| Method for growing a monocrystalline tin-containing semiconductor material B Vincent, F Gencarelli, R Loo, M Caymax | 426 | 2019 |
| Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ... Applied Physics Letters 99 (15), 2011 | 250 | 2011 |
| GeSn/Ge heterostructure short-wave infrared photodetectors on silicon A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, ... Optics express 20 (25), 27297-27303, 2012 | 213 | 2012 |
| Multiple gate semiconductor device and method for forming same A Kottantharayil, R Loo US Patent App. 10/899,659, 2005 | 192 | 2005 |
| Germanium-on-silicon mid-infrared arrayed waveguide grating multiplexers A Malik, M Muneeb, S Pathak, Y Shimura, J Van Campenhout, R Loo, ... IEEE Photonics Technology Letters 25 (18), 1805-1808, 2013 | 169 | 2013 |
| Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ... Microelectronic Engineering 88 (4), 342-346, 2011 | 156 | 2011 |
| Crystalline properties and strain relaxation mechanism of CVD grown GeSn F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ... ECS Journal of Solid State Science and Technology 2 (4), P134, 2013 | 155 | 2013 |
| Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs A Vandooren, D Leonelli, R Rooyackers, A Hikavyy, K Devriendt, ... Solid-State Electronics 83, 50-55, 2013 | 147 | 2013 |
| Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 145 | 2008 |
| Fabrication and Analysis of a Heterojunction Line Tunnel FET AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 61 (3), 707-715, 2014 | 143 | 2014 |
| Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014 | 142 | 2014 |
| Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared A Malik, S Dwivedi, L Van Landschoot, M Muneeb, Y Shimura, G Lepage, ... Optics express 22 (23), 28479-28488, 2014 | 131 | 2014 |
| Site selective integration of III–V materials on Si for nanoscale logic and photonic devices M Paladugu, C Merckling, R Loo, O Richard, H Bender, J Dekoster, ... Crystal Growth & Design 12 (10), 4696-4702, 2012 | 131 | 2012 |
| Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6 F Gencarelli, B Vincent, L Souriau, O Richard, W Vandervorst, R Loo, ... Thin Solid Films 520 (8), 3211-3215, 2012 | 122 | 2012 |
| High quality Ge virtual substrates on Si wafers with standard STI patterning R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax Journal of The Electrochemical Society 157 (1), H13, 2009 | 121 | 2009 |
| A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100) G Wang, R Loo, E Simoen, L Souriau, M Caymax, MM Heyns, B Blanpain Applied Physics Letters 94 (10), 2009 | 113 | 2009 |
| Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device R Rooyackers, D Leonelli, A Vandooren, AS Verhulst, R Loo, S De Gendt US Patent 8,415,209, 2013 | 100 | 2013 |
| Challenges and opportunities in advanced Ge pMOSFETs E Simoen, J Mitard, G Hellings, G Eneman, B De Jaeger, L Witters, ... Materials Science in Semiconductor Processing 15 (6), 588-600, 2012 | 94 | 2012 |
| Selective area growth of high quality InP on Si (001) substrates G Wang, MR Leys, R Loo, O Richard, H Bender, N Waldron, G Brammertz, ... Applied Physics Letters 97 (12), 2010 | 93 | 2010 |
| Germanium-on-silicon planar concave grating wavelength (de) multiplexers in the mid-infrared A Malik, M Muneeb, Y Shimura, J Van Campenhout, R Loo, G Roelkens Applied Physics Letters 103 (16), 2013 | 88 | 2013 |
