| Wiring board and method for manufacturing the same K Kikuchi, S Yamamichi, H Murai, T Funaya, T Maeda, H Honda, K Ogawa, ... US Patent 7,674,989, 2010 | 385 | 2010 |
| Barrier layers for realization of high capacitance density in SrTiO3 thin‐film capacitor on silicon T Sakuma, S Yamamichi, S Matsubara, H Yamaguchi, Y Miyasaka Applied physics letters 57 (23), 2431-2433, 1990 | 208 | 1990 |
| SrTiO3 thin film preparation by ion beam sputtering and its dielectric properties S Yamamichi, T Sakuma, KTK Takemura, YMY Miyasaka Japanese journal of applied physics 30 (9S), 2193, 1991 | 187 | 1991 |
| (Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering S Yamamichi, H Yabuta, T Sakuma, Y Miyasaka Applied physics letters 64 (13), 1644-1646, 1994 | 173 | 1994 |
| Semiconductor device and fabrication method K Mori, K Kikuchi, S Yamamichi US Patent 8,004,074, 2011 | 126 | 2011 |
| A Stacked Capacitor with (Ba/sub x/Sr/sub 1-x/) TiO/sub 3/for 256M DRAM K Koyama, T Sakuma, S Yamamichi, H Watanabe, H Aoki, S Ohya, ... International Electron Devices Meeting 1991 [Technical Digest], 823-826, 1991 | 118 | 1991 |
| Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same T Mori, A Shibuya, S Yamamichi US Patent 6,818,469, 2004 | 91 | 2004 |
| Circuit substrate, an electronic device arrangement and a manufacturing process for the circuit substrate T Funaya, S Yamamichi US Patent App. 12/298,737, 2010 | 88 | 2010 |
| Semiconductor device and manufacturing method thereof K Mori, D Ohshima, S Yamamichi, H Murai, K Maeda, K Kikuchi, ... US Patent 8,569,892, 2013 | 86 | 2013 |
| Wiring board capable of containing functional element and method for manufacturing same T Funaya, S Yamamichi, D Ohshima, Y Nakashima US Patent 8,692,135, 2014 | 85 | 2014 |
| Method of manufacturing thin film capacitor S Yamamichi, H Watanabe, Y Miyasaka US Patent 6,225,133, 2001 | 85 | 2001 |
| RuO2/TiN-based storage electrodes for (Ba, Sr) TiO3 dynamic random access memory capacitors K Takemura, S Yamamichi, PY Lesaicherre, K Tokashiki, H Miyamoto, ... Japanese journal of applied physics 34 (9S), 5224, 1995 | 84 | 1995 |
| Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure T Iizuka, T Yamamoto, M Toda, S Yamamichi US Patent 8,212,299, 2012 | 77 | 2012 |
| Method for fabricating a thin film capacitor S Yamamichi, H Watanabe, T Hashimoto, T Sakuma US Patent 5,366,920, 1994 | 72 | 1994 |
| A stacked capacitor technology with ECR plasma MOCVD (Ba, Sr) TiO/sub 3/and RuO/sub 2//Ru/TiN/TiSi/sub x/storage nodes for Gb-scale DRAMs S Yamamichi, P Lesaicherre, H Yamaguchi, K Takemura, S Sone, ... IEEE Transactions on Electron Devices 44 (7), 1076-1083, 1997 | 71 | 1997 |
| Functional-device-embedded circuit board, method for manufacturing the same, and electronic equipment T Funaya, S Yamamichi, H Murai, K Mori, K Kikuchi US Patent App. 12/593,489, 2010 | 65 | 2010 |
| Semiconductor element-embedded substrate, and method of manufacturing the substrate K Mori, S Yamamichi, H Murai, K Kikuchi, Y Nakashima, D Ohshima US Patent 8,810,008, 2014 | 62 | 2014 |
| An ECR MOCVD (Ba, Sr) TiO/sub 3/based stacked capacitor technology with RuO/sub 2//Ru/TiN/TiSi/sub x/storage nodes for Gbit-scale DRAMs S Yamamichi, PY Lesaicherre, H Yamaguchi, K Takemura, S Sone, ... Proceedings of International Electron Devices Meeting, 119-122, 1995 | 61* | 1995 |
| Semiconductor element-embedded wiring substrate K Kikuchi, S Yamamichi, H Murai, K Mori, Y Nakashima US Patent 8,710,639, 2014 | 60 | 2014 |
| Wiring board for mounting semiconductor device, manufacturing method of the same, and wiring board assembly T Funaya, H Murai, S Yamamichi, K Kikuchi, H Honda, S Miyazaki US Patent App. 12/160,132, 2009 | 60 | 2009 |
