KIHYUN CHOI
KIHYUN CHOI
Samsung Electronics
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Cited by
Cited by
Year
Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot
MJ Holmes, K Choi, S Kako, M Arita, Y Arakawa
Nano letters 14 (2), 982-986, 2014
3692014
Selective-area growth of thin GaN nanowires by MOCVD
K Choi, M Arita, Y Arakawa
Journal of Crystal Growth 357, 58-61, 2012
1142012
Single photons from a hot solid-state emitter at 350 K
MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa
ACS photonics 3 (4), 543-546, 2016
672016
Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots
M Holmes, S Kako, K Choi, M Arita, Y Arakawa
Physical Review B 92 (11), 115447, 2015
472015
Photoluminescence from highly excited AlN epitaxial layers
Y Yamada, K Choi, S Shin, H Murotani, T Taguchi, N Okada, H Amano
Applied Physics Letters 92 (13), 131912, 2008
412008
Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires
K Choi, S Kako, MJ Holmes, M Arita, Y Arakawa
Applied Physics Letters 103 (17), 171907, 2013
362013
Measurement of an Exciton Rabi Rotation in a Single Nanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control
M Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Physical review letters 111 (5), 057401, 2013
342013
Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
K Choi, M Arita, S Kako, Y Arakawa
Journal of crystal growth 370, 328-331, 2013
292013
Probing the excitonic states of site-controlled GaN nanowire quantum dots
MJ Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Nano letters 15 (2), 1047-1051, 2015
122015
Modeling of FinFET self-heating effects in multiple FinFET technology generations with implication for transistor and product reliability
HC Sagong, K Choi, J Kim, T Jeong, M Choe, H Shim, W Kim, J Park, ...
2018 IEEE Symposium on VLSI Technology, 121-122, 2018
102018
Linearly polarized single photons from small site-controlled GaN nanowire quantum dots
MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa
Gallium Nitride Materials and Devices XI 9748, 97481E, 2016
92016
Temperature dependent photoluminescence excitation spectroscopy of GaN quantum dots in site controlled GaN/AlGaN nanowires
MJ Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Japanese Journal of Applied Physics 52 (8S), 08JL02, 2013
82013
Enhanced reliability of 7-nm process technology featuring EUV
K Choi, HC Sagong, W Kang, H Kim, J Hai, M Lee, B Kim, M Lee, S Lee, ...
IEEE Transactions on Electron Devices 66 (12), 5399-5403, 2019
72019
ACS Photonics 3, 543 (2016)
MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa
7
Reliability of Advanced FinFET Technology Nodes Beyond Planar
HC Sagong, K Choi, H Jiang, J Park, H Rhee, S Pae
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
12020
Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction
H Jiang, J Kim, K Choi, H Shim, H Sagong, J Park, H Rhee, E Lee
2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021
2021
Semiconductor device and method for fabricating the same
HC Sagong, SW Pae, KH Choi, JK Park, UJ Jung
US Patent 10,943,900, 2021
2021
Reliability on Evolutionary FinFET CMOS Technology and Beyond
K Choi, HC Sagong, M Jin, J Hai, M Lee, T Jeong, MS Yeo, H Shim, ...
2020 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2020
2020
FEOL Self-heating and BEOL Joule-heating Effects of FinFET Technology and Its Implications for Reliability Prediction
H Jiang, T Jeong, H Sagong, K Choi, M Jin, M Yeo, H Rhee, E Lee
2020 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2020
2020
Semiconductor device including a gate structure with a wider end portion than a linear portion
HC Sagong, SE Kim, JW Kim, JK Park, SW Pae, KH Choi
US Patent App. 16/415,633, 2020
2020
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Articles 1–20