| Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot MJ Holmes, K Choi, S Kako, M Arita, Y Arakawa Nano letters 14 (2), 982-986, 2014 | 447 | 2014 |
| Selective-area growth of thin GaN nanowires by MOCVD K Choi, M Arita, Y Arakawa Journal of Crystal Growth 357, 58-61, 2012 | 152 | 2012 |
| Single photons from a hot solid-state emitter at 350 K MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa ACS photonics 3 (4), 543-546, 2016 | 95 | 2016 |
| Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots M Holmes, S Kako, K Choi, M Arita, Y Arakawa Physical Review B 92 (11), 115447, 2015 | 59 | 2015 |
| Photoluminescence from highly excited AlN epitaxial layers Y Yamada, K Choi, S Shin, H Murotani, T Taguchi, N Okada, H Amano Applied Physics Letters 92 (13), 2008 | 44 | 2008 |
| Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires K Choi, S Kako, MJ Holmes, M Arita, Y Arakawa Applied Physics Letters 103 (17), 2013 | 37 | 2013 |
| Measurement of an Exciton Rabi Rotation in a Single Nanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control M Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa Physical Review Letters 111 (5), 057401, 2013 | 37 | 2013 |
| Site-controlled growth of single GaN quantum dots in nanowires by MOCVD K Choi, M Arita, S Kako, Y Arakawa Journal of crystal growth 370, 328-331, 2013 | 31 | 2013 |
| Enhanced reliability of 7-nm process technology featuring EUV K Choi, HC Sagong, W Kang, H Kim, J Hai, M Lee, B Kim, M Lee, S Lee, ... IEEE Transactions on Electron Devices 66 (12), 5399-5403, 2019 | 19 | 2019 |
| Modeling of FinFET self-heating effects in multiple FinFET technology generations with implication for transistor and product reliability HC Sagong, K Choi, J Kim, T Jeong, M Choe, H Shim, W Kim, J Park, ... 2018 IEEE Symposium on VLSI Technology, 121-122, 2018 | 19 | 2018 |
| Probing the excitonic states of site-controlled GaN nanowire quantum dots MJ Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa Nano Letters 15 (2), 1047-1051, 2015 | 13 | 2015 |
| Reliability on evolutionary FinFET CMOS technology and beyond K Choi, HC Sagong, M Jin, J Hai, M Lee, T Jeong, MS Yeo, H Shim, ... 2020 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2020 | 11 | 2020 |
| Linearly polarized single photons from small site-controlled GaN nanowire quantum dots MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa Gallium Nitride Materials and Devices XI 9748, 138-142, 2016 | 10 | 2016 |
| ACS Photonics 3, 543 (2016) MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa | 9 | |
| Temperature dependent photoluminescence excitation spectroscopy of GaN quantum dots in site controlled GaN/AlGaN nanowires MJ Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa Japanese Journal of Applied Physics 52 (8S), 08JL02, 2013 | 8 | 2013 |
| Reverse body bias dependence of HCI reliability in advanced FinFET MI Mahmud, R Ranjan, KD Lee, PR Perepa, CD Kwon, S Choo, K Choi 2022 IEEE International Reliability Physics Symposium (IRPS), P58-1-P58-4, 2022 | 4 | 2022 |
| Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic Technology S Kim, U Jung, S Choo, K Choi, T Chung, S Chung, E Lee, J Park, D Bae, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 11A. 1-1-11A. 1-7, 2022 | 4 | 2022 |
| Time dependent variability in advanced FinFET technology for end-of-lifetime reliability prediction H Jiang, J Kim, K Choi, H Shim, H Sagong, J Park, H Rhee, E Lee 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 3 | 2021 |
| FEOL self-heating and BEOL joule-heating effects of FinFET technology and its implications for reliability prediction H Jiang, T Jeong, H Sagong, K Choi, M Jin, M Yeo, H Rhee, E Lee 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2020 | 3 | 2020 |
| Reliability of advanced FinFET technology nodes beyond planar HC Sagong, K Choi, H Jiang, J Park, H Rhee, S Pae 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 3 | 2020 |
Satoshi KAKOResearch Scientist at NTT Research Inc.Verified email at ntt-research.com
