Mami Fujii
Mami Fujii
確認したメール アドレス: ms.naist.jp
タイトル
引用先
引用先
Thermal analysis of degradation in Ga2O3–In2O3–ZnO thin-film transistors
M Fujii, H Yano, T Hatayama, Y Uraoka, T Fuyuki, JS Jung, JY Kwon
Japanese Journal of Applied Physics 47 (8R), 6236, 2008
822008
Experimental and theoretical analysis of degradation in Ga2O3–In2O3–ZnO thin-film transistors
M Fujii, Y Uraoka, T Fuyuki, JS Jung, JY Kwon
Japanese Journal of Applied Physics 48 (4S), 04C091, 2009
462009
Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
M Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, M Horita, ...
Applied Physics Letters 102 (12), 122107, 2013
402013
Density of states in amorphous In-Ga-Zn-O thin-film transistor under negative bias illumination stress
Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, M Fujii, ...
ECS Journal of Solid State Science and Technology 3 (9), Q3001-Q3004, 2014
272014
The influence of fluorinated silicon nitride gate insulator on positive bias stability toward highly reliable amorphous InGaZnO thin-film transistors
H Yamazaki, Y Ishikawa, M Fujii, Y Ueoka, M Fujiwara, E Takahashi, ...
ECS Journal of Solid State Science and Technology 3 (2), Q20, 2013
252013
High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
MN Fujii, Y Ishikawa, K Miwa, H Okada, Y Uraoka, S Ono
Scientific reports 5, 18168, 2015
222015
Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers
JP Bermundo, Y Ishikawa, MN Fujii, T Nonaka, R Ishihara, H Ikenoue, ...
Journal of Physics D: Applied Physics 49 (3), 035102, 2015
172015
Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors
JP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, MN Fujii, Y Uraoka
Applied Physics Letters 107 (3), 033504, 2015
172015
Comparison between effects of PECVD-SiOx and thermal ALD-AlOx passivation layers on characteristics of amorphous InGaZnO TFTs
J Tanaka, Y Ueoka, K Yoshitsugu, M Fujii, Y Ishikawa, Y Uraoka, ...
ECS Journal of Solid State Science and Technology 4 (7), Q61, 2015
162015
Reliability improvement of amorphous InGaZnO thin-film transistors by less hydroxyl-groups siloxane passivation
C Kulchaisit, Y Ishikawa, MN Fujii, H Yamazaki, JPS Bermundo, ...
Journal of Display Technology 12 (3), 263-267, 2016
132016
Vapor-induced improvements in field effect mobility of transparent a-IGZO TFTs
MN Fujii, Y Ishikawa, M Horita, Y Uraoka
ECS Journal of Solid State Science and Technology 3 (9), Q3050-Q3053, 2014
132014
Unique phenomenon in degradation of amorphous In2O3–Ga2O3–ZnO thin-film transistors under dynamic stress
M Fujii, Y Ishikawa, M Horita, Y Uraoka
Applied physics express 4 (10), 104103, 2011
132011
H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing
JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka
Applied Physics Letters 110 (13), 133503, 2017
82017
Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment
MPA Jallorina, JPS Bermundo, MN Fujii, Y Ishikawa, Y Uraoka
Applied Physics Letters 112 (19), 193501, 2018
72018
Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors
MN Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, ...
AIP Advances 6 (6), 065216, 2016
72016
Self-heating induced instability of oxide thin film transistors under dynamic stress
K Kise, MN Fujii, S Urakawa, H Yamazaki, E Kawashima, S Tomai, ...
Applied Physics Letters 108 (2), 023501, 2016
72016
Self-heating suppressed structure of a-IGZO thin-film transistor
K Kise, MN Fujii, JP Bermundo, Y Ishikawa, Y Uraoka
IEEE Electron Device Letters 39 (9), 1322-1325, 2018
52018
Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45° C
JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka
ACS applied materials & interfaces 10 (29), 24590-24597, 2018
52018
Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
DC Corsino, JPS Bermundo, MN Fujii, K Takahashi, Y Ishikawa, Y Uraoka
Applied Physics Express 11 (6), 061103, 2018
52018
Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin
M Ochi, A Hino, H Goto, K Hayashi, MN Fujii, Y Uraoka, T Kugimiya
Japanese Journal of Applied Physics 57 (2S2), 02CB06, 2017
52017
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