フォロー
Dae-Young Jeon
Dae-Young Jeon
Department of Electrical Engineering, Gyeongsang National University, South Korea
確認したメール アドレス: gnu.ac.kr - ホームページ
タイトル
引用先
引用先
The interlayer screening effect of graphene sheets investigated by Kelvin probe force microscopy
NJ Lee, JW Yoo, YJ Choi, CJ Kang, DY Jeon, DC Kim, S Seo, HJ Chung
Applied Physics Letters 95 (22), 2009
1682009
Oxide double‐layer nanocrossbar for ultrahigh‐density bipolar resistive memory
SH Chang, SB Lee, DY Jeon, SJ Park, GT Kim, SM Yang, SC Chae, ...
Advanced materials 23 (35), 4063, 2011
1432011
The structural and electrical evolution of graphene by oxygen plasma-induced disorder
DC Kim, DY Jeon, HJ Chung, YS Woo, JK Shin, S Seo
Nanotechnology 20 (37), 375703, 2009
1322009
Revisited parameter extraction methodology for electrical characterization of junctionless transistors
DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 90, 86-93, 2013
1162013
Low-temperature electrical characterization of junctionless transistors
DY Jeon, SJ Park, M Mouis, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 80, 135-141, 2013
882013
Radio-frequency electrical characteristics of single layer graphene
DY Jeon, KJ Lee, M Kim, DC Kim, HJ Chung, YS Woo, S Seo
Japanese journal of applied physics 48 (9R), 091601, 2009
532009
Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
Y Woo, SA Seo, D Kim, H Chung, DY Jeon
US Patent 8,159,037, 2012
512012
Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors
DY Jeon, SJ Park, M Mouis, S Barraud, GT Kim, G Ghibaudo
Solid-state electronics 81, 101-104, 2013
462013
High-resolution field effect sensing of ferroelectric charges
H Ko, K Ryu, H Park, C Park, D Jeon, YK Kim, J Jung, DK Min, Y Kim, ...
Nano letters 11 (4), 1428-1433, 2011
442011
Scaling and graphical transport-map analysis of ambipolar Schottky-barrier thin-film transistors based on a parallel array of Si nanowires
DY Jeon, S Pregl, SJ Park, L Baraban, G Cuniberti, T Mikolajick, ...
Nano letters 15 (7), 4578-4584, 2015
392015
Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors
DY Jeon, SJ Park, M Mouis, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 81, 58-62, 2013
382013
3D Architecturing Strategy on the Utmost Carbon Nanotube Fiber for Ultra‐High Performance Fiber‐Shaped Supercapacitor
JG Kim, H Yu, JY Jung, MJ Kim, DY Jeon, HS Jeong, ND Kim
Advanced Functional Materials 32 (28), 2113057, 2022
352022
Piezo-impedance response of carbon nanotube/polydimethylsiloxane nanocomposites
DY Jeon, H Kim, MW Lee, SJ Park, GT Kim
APL Materials 7 (4), 2019
332019
Reconfigurable Si nanowire nonvolatile transistors
SJ Park, DY Jeon, S Piontek, M Grube, J Ocker, V Sessi, A Heinzig, ...
Advanced Electronic Materials 4 (1), 1700399, 2018
322018
Back biasing effects in tri-gate junctionless transistors
SJ Park, DY Jeon, L Montès, S Barraud, GT Kim, G Ghibaudo
Solid-state electronics 87, 74-79, 2013
302013
Hybrid dielectrics composed of Al2O3 and phosphonic acid self-assembled monolayers for performance improvement in low voltage organic field effect transistors
S Jang, D Son, S Hwang, M Kang, SK Lee, DY Jeon, S Bae, SH Lee, ...
Nano Convergence 5, 1-8, 2018
282018
Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors
SJ Park, DY Jeon, SE Ahn, S Jeon, L Montès, GT Kim, G Ghibaudo
Thin Solid Films 548, 560-565, 2013
272013
Impact of series resistance on the operation of junctionless transistors
DY Jeon, SJ Park, M Mouis, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 129, 103-107, 2017
252017
Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model
CY Yim, DY Jeon, KH Kim, GT Kim, YS Woo, S Roth, JS Lee, S Kim
Journal of the Korean Physical Society 48 (6), 1565-1569, 2006
232006
Mixed ionic and electronic conduction in radical polymers
I Yu, D Jeon, B Boudouris, Y Joo
Macromolecules 53 (11), 4435-4441, 2020
222020
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